Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes
A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of th...
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| Veröffentlicht in: | Applied physics letters 2023-09, Vol.123 (12) |
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| container_title | Applied physics letters |
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| creator | Jeong, Hoon Cho, Minkyu Xu, Zhiyu Mehnke, Frank Otte, Nepomuk Shen, Shyh-Chiang Detchprohm, Theeradetch Dupuis, Russell D. |
| description | A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation. |
| doi_str_mv | 10.1063/5.0161953 |
| format | Article |
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The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0161953</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Avalanche diodes ; Bias ; Current density ; Dark current ; Ion implantation ; Metalorganic chemical vapor deposition ; Nitrogen ions ; Photodiodes ; Physics ; Substrates</subject><ispartof>Applied physics letters, 2023-09, Vol.123 (12)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). 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The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Avalanche diodes Bias Current density Dark current Ion implantation Metalorganic chemical vapor deposition Nitrogen ions Photodiodes Physics Substrates |
| title | Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes |
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