Enhanced passivation and stability of negative charge injected SiNx with higher nitrogen content on the boron diffused surface of n-type Si solar cells

This paper explores the potential of the negatively charged SiNx using plasma charge injection technology to passivate the front textured boron-diffused emitter of n-type Si solar cells. The high-x value single SiNx layer with x ≥ 1.30 (x = N/Si) previously developed for the planarized rear-side pas...

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Veröffentlicht in:	Solar energy materials and solar cells 2024-08, Vol.273, p.112922, Article 112922
Hauptverfasser:	Min, Kwan Hong, Hwang, Jeong-Mo, Chen, Christopher, Choi, Wook-Jin, Upadhyaya, Vijaykumar D., Bounsaville, Brian, Rohatgi, Ajeet, Ok, Young-Woo
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron emitter Charging stability n-TOPCon Plasma charge injection Silicon nitride SiNx SOLAR ENERGY Surface passivation
Online-Zugang:	Volltext
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