Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Abstract Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we prese...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2024-04, Vol.57 (29)
Hauptverfasser:	Rasel, Md Abu Jafar, Schoell, Ryan, Smyth, Christopher M., Hattar, Khalid, Harris, C. Thomas, Lu, Tzu-Ming, Haque, Aman, Wolfe, Douglas E., Ren, Fan, Pearton, Stephen J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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