Radiation Damage and Mitigation by Minority Carrier Injection in InAsSb/AlAsSb Heterojunction Barrier Mid-Wave Infrared Detector

The effects of gamma and proton irradiation, and of forward bias minority carrier injection, on photo-response were investigated for InAsSb/AlAsSb pBn mid-wave infrared (MWIR) detectors with an engineered majority-carrier barrier. Room-temperature gamma irradiation had an insignificant effect on 77 ...

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Veröffentlicht in:	Journal of electronic materials 2023-09, Vol.52 (9), p.6287-6292
Hauptverfasser:	Peale, R. E., Fredricksen, C. J., Klem, J. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlAsSb Aluminum Bias Carrier injection Characterization and Evaluation of Materials Chemistry and Materials Science Cold detector Electronics and Microelectronics gamma Gamma irradiation Gamma rays Heterojunctions InAsSb infrared Infrared detectors Instrumentation Laboratories MATERIALS SCIENCE Minority carriers Optical and Electronic Materials Original Research Article proton Proton irradiation Radiation Radiation damage Radioactivity Room temperature Sensors Solid State Physics
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