Modelling an electro-optical modulator based on a vertical p - n junction in a silicon-on-insulator structure
We report the results of numerical simulation of a Mach - Zehnder electro-optical modulator using beam splitters based on multimode interference in a silicon-on-insulator structure. The control is provided due to the depletion effect in the vertical p - n junction, which can be fabricated using the...
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| Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2019-11, Vol.49 (11), p.1036-1044 |
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| container_issue | 11 |
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| container_title | Quantum electronics (Woodbury, N.Y.) |
| container_volume | 49 |
| creator | Tsarev, A.V. Taziev, R.M. |
| description | We report the results of numerical simulation of a Mach - Zehnder electro-optical modulator using beam splitters based on multimode interference in a silicon-on-insulator structure. The control is provided due to the depletion effect in the vertical p - n junction, which can be fabricated using the self-alignment technology. An optimal modulator design is proposed, which impedance is matched with an external 50-Ω load, for which, with a reverse bias of - 5 V and an active length of 1.7 mm, the optical frequency bandwidth of ∼ 50 GHz can be achieved. A special doping profile of the p - n junction of the modulator is presented, which provides an optical frequency bandwidth of 30 GHz with a reverse bias of -3 V and a modulator length of 2.5 mm. Such modulators can be used in integrated optics, optical communications and radio photonics devices. |
| doi_str_mv | 10.1070/QEL17021 |
| format | Article |
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The control is provided due to the depletion effect in the vertical p - n junction, which can be fabricated using the self-alignment technology. An optimal modulator design is proposed, which impedance is matched with an external 50-Ω load, for which, with a reverse bias of - 5 V and an active length of 1.7 mm, the optical frequency bandwidth of ∼ 50 GHz can be achieved. A special doping profile of the p - n junction of the modulator is presented, which provides an optical frequency bandwidth of 30 GHz with a reverse bias of -3 V and a modulator length of 2.5 mm. Such modulators can be used in integrated optics, optical communications and radio photonics devices.</description><identifier>ISSN: 1063-7818</identifier><identifier>EISSN: 1468-4799</identifier><identifier>DOI: 10.1070/QEL17021</identifier><language>eng</language><publisher>Bristol: Kvantovaya Elektronika, Turpion Ltd and IOP Publishing</publisher><subject>Beam splitters ; BEAMS ; Bias ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Computer simulation ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CONNECTORS ; Depletion ; electro-optical modulator ; GHZ RANGE ; IMPEDANCE ; Impedance matching ; Integrated optics ; INTERFERENCE ; Mathematical models ; Modulators ; numerical simulation ; Optical frequency ; OPTICS ; p - n junction ; Photonics ; radio photonics ; Self alignment ; SEMICONDUCTOR JUNCTIONS ; SILICON ; silicon-on-insulator</subject><ispartof>Quantum electronics (Woodbury, N.Y.), 2019-11, Vol.49 (11), p.1036-1044</ispartof><rights>2019 Kvantovaya Elektronika, Turpion Ltd and IOP Publishing Ltd</rights><rights>Copyright IOP Publishing Nov 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c273t-c9b85dccdc52f4aff04660544f7193a4bdb31a5799a521167e192e2569fc76a63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1070/QEL17021/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>230,314,780,784,885,27924,27925,53846,53893</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/23005040$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Tsarev, A.V.</creatorcontrib><creatorcontrib>Taziev, R.M.</creatorcontrib><title>Modelling an electro-optical modulator based on a vertical p - n junction in a silicon-on-insulator structure</title><title>Quantum electronics (Woodbury, N.Y.)</title><addtitle>Quantum Electron</addtitle><description>We report the results of numerical simulation of a Mach - Zehnder electro-optical modulator using beam splitters based on multimode interference in a silicon-on-insulator structure. The control is provided due to the depletion effect in the vertical p - n junction, which can be fabricated using the self-alignment technology. An optimal modulator design is proposed, which impedance is matched with an external 50-Ω load, for which, with a reverse bias of - 5 V and an active length of 1.7 mm, the optical frequency bandwidth of ∼ 50 GHz can be achieved. A special doping profile of the p - n junction of the modulator is presented, which provides an optical frequency bandwidth of 30 GHz with a reverse bias of -3 V and a modulator length of 2.5 mm. Such modulators can be used in integrated optics, optical communications and radio photonics devices.</description><subject>Beam splitters</subject><subject>BEAMS</subject><subject>Bias</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Computer simulation</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CONNECTORS</subject><subject>Depletion</subject><subject>electro-optical modulator</subject><subject>GHZ RANGE</subject><subject>IMPEDANCE</subject><subject>Impedance matching</subject><subject>Integrated optics</subject><subject>INTERFERENCE</subject><subject>Mathematical models</subject><subject>Modulators</subject><subject>numerical simulation</subject><subject>Optical frequency</subject><subject>OPTICS</subject><subject>p - n junction</subject><subject>Photonics</subject><subject>radio photonics</subject><subject>Self alignment</subject><subject>SEMICONDUCTOR JUNCTIONS</subject><subject>SILICON</subject><subject>silicon-on-insulator</subject><issn>1063-7818</issn><issn>1468-4799</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNplkFtLxDAQhYMouOiCPyGgD75EkzSX9lGW9QIrIuhzSdNUs3STmqSC_96UruyDMDAD55vhnAHgguAbgiW-fV1viMSUHIEFYaJETFbVcZ6xKJAsSXkKljHaBnPGMC9FuQC7Z9-avrfuAyoHTW90Ch75IVmterjz7dir5ANsVDQt9A4q-G3CrA4QQQe3o9PJZsVOYrS91d6hXNbF_XJMYdRpDOYcnHSqj2a572fg_X79tnpEm5eHp9XdBmkqi4R01ZS81brVnHZMdR1mQkymO0mqQrGmbQqieA6nOCVESEMqaigXVaelUKI4A5fzXR-TraO2yejPbMvleDUtMOaY4QM1BP81mpjqrR-Dy8Yyw6WgpCQTdT1TOvgYg-nqIdidCj81wfX09frv6xm9mlHrh8Otf9gvWlB-0w</recordid><startdate>20191101</startdate><enddate>20191101</enddate><creator>Tsarev, A.V.</creator><creator>Taziev, R.M.</creator><general>Kvantovaya Elektronika, Turpion Ltd and IOP Publishing</general><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20191101</creationdate><title>Modelling an electro-optical modulator based on a vertical p - n junction in a silicon-on-insulator structure</title><author>Tsarev, A.V. ; Taziev, R.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c273t-c9b85dccdc52f4aff04660544f7193a4bdb31a5799a521167e192e2569fc76a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Beam splitters</topic><topic>BEAMS</topic><topic>Bias</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>Computer simulation</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CONNECTORS</topic><topic>Depletion</topic><topic>electro-optical modulator</topic><topic>GHZ RANGE</topic><topic>IMPEDANCE</topic><topic>Impedance matching</topic><topic>Integrated optics</topic><topic>INTERFERENCE</topic><topic>Mathematical models</topic><topic>Modulators</topic><topic>numerical simulation</topic><topic>Optical frequency</topic><topic>OPTICS</topic><topic>p - n junction</topic><topic>Photonics</topic><topic>radio photonics</topic><topic>Self alignment</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>SILICON</topic><topic>silicon-on-insulator</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsarev, A.V.</creatorcontrib><creatorcontrib>Taziev, R.M.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Quantum electronics (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsarev, A.V.</au><au>Taziev, R.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modelling an electro-optical modulator based on a vertical p - n junction in a silicon-on-insulator structure</atitle><jtitle>Quantum electronics (Woodbury, N.Y.)</jtitle><addtitle>Quantum Electron</addtitle><date>2019-11-01</date><risdate>2019</risdate><volume>49</volume><issue>11</issue><spage>1036</spage><epage>1044</epage><pages>1036-1044</pages><issn>1063-7818</issn><eissn>1468-4799</eissn><abstract>We report the results of numerical simulation of a Mach - Zehnder electro-optical modulator using beam splitters based on multimode interference in a silicon-on-insulator structure. The control is provided due to the depletion effect in the vertical p - n junction, which can be fabricated using the self-alignment technology. An optimal modulator design is proposed, which impedance is matched with an external 50-Ω load, for which, with a reverse bias of - 5 V and an active length of 1.7 mm, the optical frequency bandwidth of ∼ 50 GHz can be achieved. A special doping profile of the p - n junction of the modulator is presented, which provides an optical frequency bandwidth of 30 GHz with a reverse bias of -3 V and a modulator length of 2.5 mm. Such modulators can be used in integrated optics, optical communications and radio photonics devices.</abstract><cop>Bristol</cop><pub>Kvantovaya Elektronika, Turpion Ltd and IOP Publishing</pub><doi>10.1070/QEL17021</doi><tpages>9</tpages></addata></record> |
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| identifier | ISSN: 1063-7818 |
| ispartof | Quantum electronics (Woodbury, N.Y.), 2019-11, Vol.49 (11), p.1036-1044 |
| issn | 1063-7818 1468-4799 |
| language | eng |
| recordid | cdi_osti_scitechconnect_23005040 |
| source | Institute of Physics Journals |
| subjects | Beam splitters BEAMS Bias CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Computer simulation CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CONNECTORS Depletion electro-optical modulator GHZ RANGE IMPEDANCE Impedance matching Integrated optics INTERFERENCE Mathematical models Modulators numerical simulation Optical frequency OPTICS p - n junction Photonics radio photonics Self alignment SEMICONDUCTOR JUNCTIONS SILICON silicon-on-insulator |
| title | Modelling an electro-optical modulator based on a vertical p - n junction in a silicon-on-insulator structure |
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