AlGaN optimization for photodetectors
AlGaN/GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV–visible wavelength range. In this work we present the results of phototransistors parameters simulation based on Sim Windows for improving efficiency and performance characteristics. We ca...
Gespeichert in:
| Veröffentlicht in: | Optical and quantum electronics 2019-03, Vol.51 (3), p.1-10, Article 68 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 10 |
|---|---|
| container_issue | 3 |
| container_start_page | 1 |
| container_title | Optical and quantum electronics |
| container_volume | 51 |
| creator | Rabinovich, Oleg Savchuk, Alexander Didenko, Sergey Orlova, Marina Marenkin, Sergey Ril, Alexey Podgornaya, Svetlana |
| description | AlGaN/GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV–visible wavelength range. In this work we present the results of phototransistors parameters simulation based on Sim Windows for improving efficiency and performance characteristics. We carried the out optimization in active area and an additional doping level profile. The Al mole fraction in the collector and emitter was varied from X = 0.2 to X = 0.3 during simulation. AlGaN-based HPT with an aluminum concentration 28% provides promising performance maximum efficiency with the highest sensitivity. |
| doi_str_mv | 10.1007/s11082-019-1791-2 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22950363</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2184615735</sourcerecordid><originalsourceid>FETCH-LOGICAL-c344t-e15f9c4b5b42ed897830e36da20a1918120780c1f47a06cbfba4a87e7f93d0863</originalsourceid><addsrcrecordid>eNp1kLFOwzAQhi0EEqXwAGyVEGPgznZie6wqKEgVLCCxWY7j0FRtHGx3gKfHVZA6Md3y_f_dfYRcI9whgLiPiCBpAagKFAoLekImWApaSBQfp2QCDKpCKlTn5CLGDQBUvIQJuZ1vl-Zl5ofU7bofkzrfz1ofZsPaJ9-45GzyIV6Ss9Zso7v6m1Py_vjwtngqVq_L58V8VVjGeSoclq2yvC5rTl0jlZAMHKsaQ8GgQokUhASLLRcGKlu3teFGCidaxRqQFZuSm7HXx9TpaLu8f2193-czNKWqBFaxIzUE_7V3MemN34c-H6YpSl7lv1mZKRwpG3yMwbV6CN3OhG-NoA_O9OhMZ2f64EzTnKFjJma2_3Th2Px_6BeF3Gxm</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2184615735</pqid></control><display><type>article</type><title>AlGaN optimization for photodetectors</title><source>Springer Nature - Complete Springer Journals</source><creator>Rabinovich, Oleg ; Savchuk, Alexander ; Didenko, Sergey ; Orlova, Marina ; Marenkin, Sergey ; Ril, Alexey ; Podgornaya, Svetlana</creator><creatorcontrib>Rabinovich, Oleg ; Savchuk, Alexander ; Didenko, Sergey ; Orlova, Marina ; Marenkin, Sergey ; Ril, Alexey ; Podgornaya, Svetlana</creatorcontrib><description>AlGaN/GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV–visible wavelength range. In this work we present the results of phototransistors parameters simulation based on Sim Windows for improving efficiency and performance characteristics. We carried the out optimization in active area and an additional doping level profile. The Al mole fraction in the collector and emitter was varied from X = 0.2 to X = 0.3 during simulation. AlGaN-based HPT with an aluminum concentration 28% provides promising performance maximum efficiency with the highest sensitivity.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-019-1791-2</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>ALUMINIUM ; Aluminum gallium nitrides ; Characterization and Evaluation of Materials ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Computer Communication Networks ; DETECTION ; EFFICIENCY ; Electrical Engineering ; Emitters ; GALLIUM NITRIDES ; ION MICROPROBE ANALYSIS ; Lasers ; MASS SPECTROSCOPY ; Numerical Simulation of Optoelectronic Devices 2018 ; Optical Devices ; Optics ; OPTIMIZATION ; PHOTODETECTORS ; Photometers ; Photonics ; PHOTOTRANSISTORS ; Physics ; Physics and Astronomy ; SENSITIVITY ; SIMULATION ; WAVELENGTHS ; WINDOWS</subject><ispartof>Optical and quantum electronics, 2019-03, Vol.51 (3), p.1-10, Article 68</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-e15f9c4b5b42ed897830e36da20a1918120780c1f47a06cbfba4a87e7f93d0863</citedby><cites>FETCH-LOGICAL-c344t-e15f9c4b5b42ed897830e36da20a1918120780c1f47a06cbfba4a87e7f93d0863</cites><orcidid>0000-0002-7241-8495</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11082-019-1791-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11082-019-1791-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,778,782,883,27907,27908,41471,42540,51302</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22950363$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Rabinovich, Oleg</creatorcontrib><creatorcontrib>Savchuk, Alexander</creatorcontrib><creatorcontrib>Didenko, Sergey</creatorcontrib><creatorcontrib>Orlova, Marina</creatorcontrib><creatorcontrib>Marenkin, Sergey</creatorcontrib><creatorcontrib>Ril, Alexey</creatorcontrib><creatorcontrib>Podgornaya, Svetlana</creatorcontrib><title>AlGaN optimization for photodetectors</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>AlGaN/GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV–visible wavelength range. In this work we present the results of phototransistors parameters simulation based on Sim Windows for improving efficiency and performance characteristics. We carried the out optimization in active area and an additional doping level profile. The Al mole fraction in the collector and emitter was varied from X = 0.2 to X = 0.3 during simulation. AlGaN-based HPT with an aluminum concentration 28% provides promising performance maximum efficiency with the highest sensitivity.</description><subject>ALUMINIUM</subject><subject>Aluminum gallium nitrides</subject><subject>Characterization and Evaluation of Materials</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Computer Communication Networks</subject><subject>DETECTION</subject><subject>EFFICIENCY</subject><subject>Electrical Engineering</subject><subject>Emitters</subject><subject>GALLIUM NITRIDES</subject><subject>ION MICROPROBE ANALYSIS</subject><subject>Lasers</subject><subject>MASS SPECTROSCOPY</subject><subject>Numerical Simulation of Optoelectronic Devices 2018</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>OPTIMIZATION</subject><subject>PHOTODETECTORS</subject><subject>Photometers</subject><subject>Photonics</subject><subject>PHOTOTRANSISTORS</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>SENSITIVITY</subject><subject>SIMULATION</subject><subject>WAVELENGTHS</subject><subject>WINDOWS</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kLFOwzAQhi0EEqXwAGyVEGPgznZie6wqKEgVLCCxWY7j0FRtHGx3gKfHVZA6Md3y_f_dfYRcI9whgLiPiCBpAagKFAoLekImWApaSBQfp2QCDKpCKlTn5CLGDQBUvIQJuZ1vl-Zl5ofU7bofkzrfz1ofZsPaJ9-45GzyIV6Ss9Zso7v6m1Py_vjwtngqVq_L58V8VVjGeSoclq2yvC5rTl0jlZAMHKsaQ8GgQokUhASLLRcGKlu3teFGCidaxRqQFZuSm7HXx9TpaLu8f2193-czNKWqBFaxIzUE_7V3MemN34c-H6YpSl7lv1mZKRwpG3yMwbV6CN3OhG-NoA_O9OhMZ2f64EzTnKFjJma2_3Th2Px_6BeF3Gxm</recordid><startdate>20190301</startdate><enddate>20190301</enddate><creator>Rabinovich, Oleg</creator><creator>Savchuk, Alexander</creator><creator>Didenko, Sergey</creator><creator>Orlova, Marina</creator><creator>Marenkin, Sergey</creator><creator>Ril, Alexey</creator><creator>Podgornaya, Svetlana</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-7241-8495</orcidid></search><sort><creationdate>20190301</creationdate><title>AlGaN optimization for photodetectors</title><author>Rabinovich, Oleg ; Savchuk, Alexander ; Didenko, Sergey ; Orlova, Marina ; Marenkin, Sergey ; Ril, Alexey ; Podgornaya, Svetlana</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-e15f9c4b5b42ed897830e36da20a1918120780c1f47a06cbfba4a87e7f93d0863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>ALUMINIUM</topic><topic>Aluminum gallium nitrides</topic><topic>Characterization and Evaluation of Materials</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>Computer Communication Networks</topic><topic>DETECTION</topic><topic>EFFICIENCY</topic><topic>Electrical Engineering</topic><topic>Emitters</topic><topic>GALLIUM NITRIDES</topic><topic>ION MICROPROBE ANALYSIS</topic><topic>Lasers</topic><topic>MASS SPECTROSCOPY</topic><topic>Numerical Simulation of Optoelectronic Devices 2018</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>OPTIMIZATION</topic><topic>PHOTODETECTORS</topic><topic>Photometers</topic><topic>Photonics</topic><topic>PHOTOTRANSISTORS</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>SENSITIVITY</topic><topic>SIMULATION</topic><topic>WAVELENGTHS</topic><topic>WINDOWS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rabinovich, Oleg</creatorcontrib><creatorcontrib>Savchuk, Alexander</creatorcontrib><creatorcontrib>Didenko, Sergey</creatorcontrib><creatorcontrib>Orlova, Marina</creatorcontrib><creatorcontrib>Marenkin, Sergey</creatorcontrib><creatorcontrib>Ril, Alexey</creatorcontrib><creatorcontrib>Podgornaya, Svetlana</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rabinovich, Oleg</au><au>Savchuk, Alexander</au><au>Didenko, Sergey</au><au>Orlova, Marina</au><au>Marenkin, Sergey</au><au>Ril, Alexey</au><au>Podgornaya, Svetlana</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>AlGaN optimization for photodetectors</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2019-03-01</date><risdate>2019</risdate><volume>51</volume><issue>3</issue><spage>1</spage><epage>10</epage><pages>1-10</pages><artnum>68</artnum><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>AlGaN/GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV–visible wavelength range. In this work we present the results of phototransistors parameters simulation based on Sim Windows for improving efficiency and performance characteristics. We carried the out optimization in active area and an additional doping level profile. The Al mole fraction in the collector and emitter was varied from X = 0.2 to X = 0.3 during simulation. AlGaN-based HPT with an aluminum concentration 28% provides promising performance maximum efficiency with the highest sensitivity.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-019-1791-2</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-7241-8495</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0306-8919 |
| ispartof | Optical and quantum electronics, 2019-03, Vol.51 (3), p.1-10, Article 68 |
| issn | 0306-8919 1572-817X |
| language | eng |
| recordid | cdi_osti_scitechconnect_22950363 |
| source | Springer Nature - Complete Springer Journals |
| subjects | ALUMINIUM Aluminum gallium nitrides Characterization and Evaluation of Materials CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Computer Communication Networks DETECTION EFFICIENCY Electrical Engineering Emitters GALLIUM NITRIDES ION MICROPROBE ANALYSIS Lasers MASS SPECTROSCOPY Numerical Simulation of Optoelectronic Devices 2018 Optical Devices Optics OPTIMIZATION PHOTODETECTORS Photometers Photonics PHOTOTRANSISTORS Physics Physics and Astronomy SENSITIVITY SIMULATION WAVELENGTHS WINDOWS |
| title | AlGaN optimization for photodetectors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T12%3A13%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=AlGaN%20optimization%20for%20photodetectors&rft.jtitle=Optical%20and%20quantum%20electronics&rft.au=Rabinovich,%20Oleg&rft.date=2019-03-01&rft.volume=51&rft.issue=3&rft.spage=1&rft.epage=10&rft.pages=1-10&rft.artnum=68&rft.issn=0306-8919&rft.eissn=1572-817X&rft_id=info:doi/10.1007/s11082-019-1791-2&rft_dat=%3Cproquest_osti_%3E2184615735%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2184615735&rft_id=info:pmid/&rfr_iscdi=true |