Characterization of CuO/n–Si pn junction synthesized by successive ionic layer adsorption and reaction method
Transparent conducting Copper oxide CuO thin films were successfully synthesized on glass and n-type Silicon substrates by successive ionic layer adsorption and reaction method. The crystal structure, surface texture, optical and electrical properties were studied. The results revealed that the depo...
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| Veröffentlicht in: | Optical and quantum electronics 2019-07, Vol.51 (7), p.1-13, Article 233 |
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| creator | Alkhayatt, Adel H. Omran Jaafer, Mustafa D. Al Alak, Hassan Hadi Ali Ali, Asala H. |
| description | Transparent conducting Copper oxide CuO thin films were successfully synthesized on glass and n-type Silicon substrates by successive ionic layer adsorption and reaction method. The crystal structure, surface texture, optical and electrical properties were studied. The results revealed that the deposited CuO thin films at different cycles number (5, 10, 15), have polycrystalline structure nature with monoclinic phase, and the crystallite size increases with the increase of cycles number. The average roughness and the root mean square values increase with increasing cycles number. The optical energy band gap and Urbach energy was decrement from 2.33 eV and 1.2 eV for 5 cycles to 2.1 eV and 0.82 eV for 15 cycles. The electrical properties of Ni/CuO/n–Si pn junction were studied using current–voltage (I–V) measurements. The barrier heights
(
Φ
B
)
of Ni/CuO/n–Si thin films were calculated and its values are (0.716, 0.736, 0.723) eV, for 5, 10 and 15 cycles respectively with an applied bias voltage of 3 V. |
| doi_str_mv | 10.1007/s11082-019-1951-4 |
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(
Φ
B
)
of Ni/CuO/n–Si thin films were calculated and its values are (0.716, 0.736, 0.723) eV, for 5, 10 and 15 cycles respectively with an applied bias voltage of 3 V.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-019-1951-4</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>ADSORPTION ; Characterization and Evaluation of Materials ; Computer Communication Networks ; COPPER OXIDES ; Crystal structure ; Crystallites ; ELECTRIC POTENTIAL ; Electrical Engineering ; ELECTRICAL PROPERTIES ; Energy gap ; GLASS ; Glass substrates ; Lasers ; Mean square values ; MONOCLINIC LATTICES ; NANOSCIENCE AND NANOTECHNOLOGY ; NANOSTRUCTURES ; Optical Devices ; Optical properties ; Optics ; P-n junctions ; Photonics ; Physics ; Physics and Astronomy ; POLYCRYSTALS ; ROUGHNESS ; SEMICONDUCTOR JUNCTIONS ; SILICON ; Silicon substrates ; SUBSTRATES ; Surface layers ; THIN FILMS</subject><ispartof>Optical and quantum electronics, 2019-07, Vol.51 (7), p.1-13, Article 233</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-1676d79152ec77d9faa38de925c7c3f1c9afcd814f6d8d6d4b86cecf33ca99c23</citedby><cites>FETCH-LOGICAL-c344t-1676d79152ec77d9faa38de925c7c3f1c9afcd814f6d8d6d4b86cecf33ca99c23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11082-019-1951-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11082-019-1951-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22950195$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Alkhayatt, Adel H. Omran</creatorcontrib><creatorcontrib>Jaafer, Mustafa D.</creatorcontrib><creatorcontrib>Al Alak, Hassan Hadi Ali</creatorcontrib><creatorcontrib>Ali, Asala H.</creatorcontrib><title>Characterization of CuO/n–Si pn junction synthesized by successive ionic layer adsorption and reaction method</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>Transparent conducting Copper oxide CuO thin films were successfully synthesized on glass and n-type Silicon substrates by successive ionic layer adsorption and reaction method. The crystal structure, surface texture, optical and electrical properties were studied. The results revealed that the deposited CuO thin films at different cycles number (5, 10, 15), have polycrystalline structure nature with monoclinic phase, and the crystallite size increases with the increase of cycles number. The average roughness and the root mean square values increase with increasing cycles number. The optical energy band gap and Urbach energy was decrement from 2.33 eV and 1.2 eV for 5 cycles to 2.1 eV and 0.82 eV for 15 cycles. The electrical properties of Ni/CuO/n–Si pn junction were studied using current–voltage (I–V) measurements. The barrier heights
(
Φ
B
)
of Ni/CuO/n–Si thin films were calculated and its values are (0.716, 0.736, 0.723) eV, for 5, 10 and 15 cycles respectively with an applied bias voltage of 3 V.</description><subject>ADSORPTION</subject><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>COPPER OXIDES</subject><subject>Crystal structure</subject><subject>Crystallites</subject><subject>ELECTRIC POTENTIAL</subject><subject>Electrical Engineering</subject><subject>ELECTRICAL PROPERTIES</subject><subject>Energy gap</subject><subject>GLASS</subject><subject>Glass substrates</subject><subject>Lasers</subject><subject>Mean square values</subject><subject>MONOCLINIC LATTICES</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>NANOSTRUCTURES</subject><subject>Optical Devices</subject><subject>Optical properties</subject><subject>Optics</subject><subject>P-n junctions</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>POLYCRYSTALS</subject><subject>ROUGHNESS</subject><subject>SEMICONDUCTOR JUNCTIONS</subject><subject>SILICON</subject><subject>Silicon substrates</subject><subject>SUBSTRATES</subject><subject>Surface layers</subject><subject>THIN FILMS</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kM1KAzEUhYMoWKsP4C7gemwyf5kspfgHhS5UcBfSmzs2pSY1yQh15Tv4hj6J047gytVdnO87XA4h55xdcsbEJHLOmjxjXGZcVjwrD8iIVyLPGi6eD8mIFazOGsnlMTmJccUYq8uKjYifLnXQkDDYD52sd9S3dNrNJ-778-vB0o2jq87BPolbl5YY7QcautjS2AFgjPYdaZ9aoGu9xUC1iT5s9oJ2hgbUg_2KaenNKTlq9Tri2e8dk6eb68fpXTab395Pr2YZFGWZMl6L2gjJqxxBCCNbrYvGoMwrEFC0HKRuwTS8bGvTmNqUi6YGhLYoQEsJeTEmF0Ovj8mqCDYhLME7h5BUnsuqX6r6ozbBv3UYk1r5Lrj-sZ4pJWuEZEVP8YGC4GMM2KpNsK86bBVnare-GtZXfafara_K3skHJ_ase8Hw1_y_9AOYv4p7</recordid><startdate>20190701</startdate><enddate>20190701</enddate><creator>Alkhayatt, Adel H. Omran</creator><creator>Jaafer, Mustafa D.</creator><creator>Al Alak, Hassan Hadi Ali</creator><creator>Ali, Asala H.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20190701</creationdate><title>Characterization of CuO/n–Si pn junction synthesized by successive ionic layer adsorption and reaction method</title><author>Alkhayatt, Adel H. Omran ; Jaafer, Mustafa D. ; Al Alak, Hassan Hadi Ali ; Ali, Asala H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-1676d79152ec77d9faa38de925c7c3f1c9afcd814f6d8d6d4b86cecf33ca99c23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>ADSORPTION</topic><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>COPPER OXIDES</topic><topic>Crystal structure</topic><topic>Crystallites</topic><topic>ELECTRIC POTENTIAL</topic><topic>Electrical Engineering</topic><topic>ELECTRICAL PROPERTIES</topic><topic>Energy gap</topic><topic>GLASS</topic><topic>Glass substrates</topic><topic>Lasers</topic><topic>Mean square values</topic><topic>MONOCLINIC LATTICES</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>NANOSTRUCTURES</topic><topic>Optical Devices</topic><topic>Optical properties</topic><topic>Optics</topic><topic>P-n junctions</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>POLYCRYSTALS</topic><topic>ROUGHNESS</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>SILICON</topic><topic>Silicon substrates</topic><topic>SUBSTRATES</topic><topic>Surface layers</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alkhayatt, Adel H. Omran</creatorcontrib><creatorcontrib>Jaafer, Mustafa D.</creatorcontrib><creatorcontrib>Al Alak, Hassan Hadi Ali</creatorcontrib><creatorcontrib>Ali, Asala H.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alkhayatt, Adel H. Omran</au><au>Jaafer, Mustafa D.</au><au>Al Alak, Hassan Hadi Ali</au><au>Ali, Asala H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of CuO/n–Si pn junction synthesized by successive ionic layer adsorption and reaction method</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2019-07-01</date><risdate>2019</risdate><volume>51</volume><issue>7</issue><spage>1</spage><epage>13</epage><pages>1-13</pages><artnum>233</artnum><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>Transparent conducting Copper oxide CuO thin films were successfully synthesized on glass and n-type Silicon substrates by successive ionic layer adsorption and reaction method. The crystal structure, surface texture, optical and electrical properties were studied. The results revealed that the deposited CuO thin films at different cycles number (5, 10, 15), have polycrystalline structure nature with monoclinic phase, and the crystallite size increases with the increase of cycles number. The average roughness and the root mean square values increase with increasing cycles number. The optical energy band gap and Urbach energy was decrement from 2.33 eV and 1.2 eV for 5 cycles to 2.1 eV and 0.82 eV for 15 cycles. The electrical properties of Ni/CuO/n–Si pn junction were studied using current–voltage (I–V) measurements. The barrier heights
(
Φ
B
)
of Ni/CuO/n–Si thin films were calculated and its values are (0.716, 0.736, 0.723) eV, for 5, 10 and 15 cycles respectively with an applied bias voltage of 3 V.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-019-1951-4</doi><tpages>13</tpages></addata></record> |
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| subjects | ADSORPTION Characterization and Evaluation of Materials Computer Communication Networks COPPER OXIDES Crystal structure Crystallites ELECTRIC POTENTIAL Electrical Engineering ELECTRICAL PROPERTIES Energy gap GLASS Glass substrates Lasers Mean square values MONOCLINIC LATTICES NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES Optical Devices Optical properties Optics P-n junctions Photonics Physics Physics and Astronomy POLYCRYSTALS ROUGHNESS SEMICONDUCTOR JUNCTIONS SILICON Silicon substrates SUBSTRATES Surface layers THIN FILMS |
| title | Characterization of CuO/n–Si pn junction synthesized by successive ionic layer adsorption and reaction method |
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