Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications
Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasm...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (16), p.2117-2119 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 52 |
| creator | Shubina, K. Yu Berezovskaya, T. N. Mokhov, D. V. Morozov, I. A. Kotlyar, K. P. Mizerov, A. M. Nikitina, E. V. Bouravleuv, A. D. |
| description | Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. Moreover, it is shown, that the photoenhanced wet chemical etching allows to remove GaN layer without damaging silicon substrate. |
| doi_str_mv | 10.1134/S1063782618160297 |
| format | Article |
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Yu ; Berezovskaya, T. N. ; Mokhov, D. V. ; Morozov, I. A. ; Kotlyar, K. P. ; Mizerov, A. M. ; Nikitina, E. V. ; Bouravleuv, A. D.</creator><creatorcontrib>Shubina, K. Yu ; Berezovskaya, T. N. ; Mokhov, D. V. ; Morozov, I. A. ; Kotlyar, K. P. ; Mizerov, A. M. ; Nikitina, E. V. ; Bouravleuv, A. D.</creatorcontrib><description>Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. 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NANOSTRUCTURE TECHNOLOGY ; Actuators ; ANISOTROPY ; Chemical etching ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Control equipment ; CRYSTAL GROWTH ; Epitaxial growth ; Epitaxial layers ; Epitaxy ; ETCHING ; Gallium compounds ; Gallium nitrate ; GALLIUM NITRIDES ; Knives ; Lasers ; Magnetic Materials ; Magnetism ; MEMS ; Microelectromechanical systems ; MOLECULAR BEAM EPITAXY ; Nitrides ; Organic chemistry ; Physics ; Physics and Astronomy ; PLASMA ; PROCESSING ; Sensors ; SILICON ; Silicon substrates ; Technology</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (16), p.2117-2119</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>COPYRIGHT 2018 Springer</rights><rights>Copyright Springer Nature B.V. 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-791e850716682cd0dcbc182fa44183ab12c5455333fa87d0377ea7d962c231ed3</citedby><cites>FETCH-LOGICAL-c383t-791e850716682cd0dcbc182fa44183ab12c5455333fa87d0377ea7d962c231ed3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782618160297$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782618160297$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22945102$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Shubina, K. Yu</creatorcontrib><creatorcontrib>Berezovskaya, T. N.</creatorcontrib><creatorcontrib>Mokhov, D. V.</creatorcontrib><creatorcontrib>Morozov, I. A.</creatorcontrib><creatorcontrib>Kotlyar, K. P.</creatorcontrib><creatorcontrib>Mizerov, A. M.</creatorcontrib><creatorcontrib>Nikitina, E. V.</creatorcontrib><creatorcontrib>Bouravleuv, A. D.</creatorcontrib><title>Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. 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NANOSTRUCTURE TECHNOLOGY</subject><subject>Actuators</subject><subject>ANISOTROPY</subject><subject>Chemical etching</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Control equipment</subject><subject>CRYSTAL GROWTH</subject><subject>Epitaxial growth</subject><subject>Epitaxial layers</subject><subject>Epitaxy</subject><subject>ETCHING</subject><subject>Gallium compounds</subject><subject>Gallium nitrate</subject><subject>GALLIUM NITRIDES</subject><subject>Knives</subject><subject>Lasers</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MEMS</subject><subject>Microelectromechanical systems</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>Nitrides</subject><subject>Organic chemistry</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>PLASMA</subject><subject>PROCESSING</subject><subject>Sensors</subject><subject>SILICON</subject><subject>Silicon substrates</subject><subject>Technology</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kUFLAzEQhRdRsFZ_gLcFL3rYNpNkk-yx1FqFVoXVc0iz2ZrSbtYkBf33blmhB5E5zDDzvseDSZJrQCMAQsclIEa4wAwEMIQLfpIMABUoY5QXp4eZkexwP08uQtggBCByOkjuX73TJgTbrFNXp3P1PC7tLQDcpbPWRvVl1TYto9_ruPcmpLXz6XK2LNNJ226tVtG6JlwmZ7XaBnP124fJ-8PsbfqYLV7mT9PJItNEkJjxAozIEQfGBNYVqvRKg8C1ohQEUSvAOqd5TgipleAVIpwbxauCYY0JmIoMk5ve14VoZdA2Gv2hXdMYHSXGBc0B4aOq9e5zb0KUG7f3TRdMYhAMU8Kw6FSjXrVWWyNtU7vole6qMjvbeZradvtJzhkgijjtAOgB7V0I3tSy9Xan_LcEJA8_kH9-0DG4Z0KnbdbGH6P8D_0Aq5yEFw</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Shubina, K. 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NANOSTRUCTURE TECHNOLOGY</topic><topic>Actuators</topic><topic>ANISOTROPY</topic><topic>Chemical etching</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Control equipment</topic><topic>CRYSTAL GROWTH</topic><topic>Epitaxial growth</topic><topic>Epitaxial layers</topic><topic>Epitaxy</topic><topic>ETCHING</topic><topic>Gallium compounds</topic><topic>Gallium nitrate</topic><topic>GALLIUM NITRIDES</topic><topic>Knives</topic><topic>Lasers</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MEMS</topic><topic>Microelectromechanical systems</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>Nitrides</topic><topic>Organic chemistry</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>PLASMA</topic><topic>PROCESSING</topic><topic>Sensors</topic><topic>SILICON</topic><topic>Silicon substrates</topic><topic>Technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shubina, K. Yu</creatorcontrib><creatorcontrib>Berezovskaya, T. N.</creatorcontrib><creatorcontrib>Mokhov, D. V.</creatorcontrib><creatorcontrib>Morozov, I. A.</creatorcontrib><creatorcontrib>Kotlyar, K. P.</creatorcontrib><creatorcontrib>Mizerov, A. M.</creatorcontrib><creatorcontrib>Nikitina, E. V.</creatorcontrib><creatorcontrib>Bouravleuv, A. D.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shubina, K. Yu</au><au>Berezovskaya, T. N.</au><au>Mokhov, D. V.</au><au>Morozov, I. A.</au><au>Kotlyar, K. P.</au><au>Mizerov, A. M.</au><au>Nikitina, E. V.</au><au>Bouravleuv, A. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2018-12-01</date><risdate>2018</risdate><volume>52</volume><issue>16</issue><spage>2117</spage><epage>2119</epage><pages>2117-2119</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. 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| subjects | 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Actuators ANISOTROPY Chemical etching CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Control equipment CRYSTAL GROWTH Epitaxial growth Epitaxial layers Epitaxy ETCHING Gallium compounds Gallium nitrate GALLIUM NITRIDES Knives Lasers Magnetic Materials Magnetism MEMS Microelectromechanical systems MOLECULAR BEAM EPITAXY Nitrides Organic chemistry Physics Physics and Astronomy PLASMA PROCESSING Sensors SILICON Silicon substrates Technology |
| title | Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications |
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