Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi{sub 1 –x}Sb{sub x}){sub 2}Te{sub 3} Topological Insulators
The mobility of surface charge carriers is estimated based on an analysis of the photoelectromagnetic effect in three-dimensional (Bi{sub 1 –x}Sb{sub x}){sub 2}Te{sub 3} (0 ≤ x ≤ 0.55) topological insulators. A high degree of degeneracy of the carrier gas in combination with a low energy of the exci...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2019-01, Vol.53 (1) |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Galeeva, A. V. Gomanko, M. A. Tamm, M. E. Yashina, L. V. Danilov, S. N. Ryabova, L. I. Khokhlov, D. R. |
| description | The mobility of surface charge carriers is estimated based on an analysis of the photoelectromagnetic effect in three-dimensional (Bi{sub 1 –x}Sb{sub x}){sub 2}Te{sub 3} (0 ≤ x ≤ 0.55) topological insulators. A high degree of degeneracy of the carrier gas in combination with a low energy of the exciting terahertz quantum provide a nonequilibrium process associated exclusively with thermal heating of the carrier. Under these conditions, the photovoltage is determined by the mobility gradient of the surface and bulk carriers. The photovoltage and, consequently, the mobility gradient disappear completely with an increase in the bulk mobility up to 10{sup 5} cm{sup 2} V{sup –1} s{sup –1}. Photovoltage is clearly observed in the samples with comparatively low bulk mobility under the same experimental conditions. |
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Under these conditions, the photovoltage is determined by the mobility gradient of the surface and bulk carriers. The photovoltage and, consequently, the mobility gradient disappear completely with an increase in the bulk mobility up to 10{sup 5} cm{sup 2} V{sup –1} s{sup –1}. 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R.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Galeeva, A. V.</au><au>Gomanko, M. A.</au><au>Tamm, M. E.</au><au>Yashina, L. V.</au><au>Danilov, S. N.</au><au>Ryabova, L. I.</au><au>Khokhlov, D. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi{sub 1 –x}Sb{sub x}){sub 2}Te{sub 3} Topological Insulators</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2019-01-15</date><risdate>2019</risdate><volume>53</volume><issue>1</issue><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The mobility of surface charge carriers is estimated based on an analysis of the photoelectromagnetic effect in three-dimensional (Bi{sub 1 –x}Sb{sub x}){sub 2}Te{sub 3} (0 ≤ x ≤ 0.55) topological insulators. A high degree of degeneracy of the carrier gas in combination with a low energy of the exciting terahertz quantum provide a nonequilibrium process associated exclusively with thermal heating of the carrier. Under these conditions, the photovoltage is determined by the mobility gradient of the surface and bulk carriers. The photovoltage and, consequently, the mobility gradient disappear completely with an increase in the bulk mobility up to 10{sup 5} cm{sup 2} V{sup –1} s{sup –1}. Photovoltage is clearly observed in the samples with comparatively low bulk mobility under the same experimental conditions.</abstract><cop>United States</cop></addata></record> |
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| subjects | ANTIMONY TELLURIDES BISMUTH TELLURIDES CHARGE CARRIERS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY HEATING MAGNETIC FIELDS MOBILITY PHOTOELECTRIC EFFECT THREE-DIMENSIONAL LATTICES TOPOLOGY |
| title | Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi{sub 1 –x}Sb{sub x}){sub 2}Te{sub 3} Topological Insulators |
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