Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films
The Raman spectra of SiO 2 films containing InSb spherical nanocrystals produced by ion-beam synthesis are studied. TO- and LO-like modes in the spectra of the InSb nanocrystals are detected at frequencies of 187 and 195 cm –1 , respectively. The shift of these modes to high frequencies with respect...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2019-04, Vol.53 (4), p.493-498 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Tyschenko, I. E. Volodin, V. A. Popov, V. P. |
| description | The Raman spectra of SiO
2
films containing InSb spherical nanocrystals produced by ion-beam synthesis are studied. TO- and LO-like modes in the spectra of the InSb nanocrystals are detected at frequencies of 187 and 195 cm
–1
, respectively. The shift of these modes to high frequencies with respect to the corresponding frequencies in InSb bulk crystals is analyzed from the viewpoint of the influence of the quantum-confinement effect, strains in nanocrystals, the surface phonon frequency, and scattering at the frequency corresponding to stretched anion–cation modes at the surface of polar spherical nanocrystals. The position of the 195-cm
–1
mode corresponds to LO phonons in InSb nanocrystals hydrostatically compressed in the SiO
2
matrix at pressures of about 10 kbar. The 187-cm
–1
mode corresponds to resonance at the Fröhlich frequency. |
| doi_str_mv | 10.1134/S1063782619040262 |
| format | Article |
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2
films containing InSb spherical nanocrystals produced by ion-beam synthesis are studied. TO- and LO-like modes in the spectra of the InSb nanocrystals are detected at frequencies of 187 and 195 cm
–1
, respectively. The shift of these modes to high frequencies with respect to the corresponding frequencies in InSb bulk crystals is analyzed from the viewpoint of the influence of the quantum-confinement effect, strains in nanocrystals, the surface phonon frequency, and scattering at the frequency corresponding to stretched anion–cation modes at the surface of polar spherical nanocrystals. The position of the 195-cm
–1
mode corresponds to LO phonons in InSb nanocrystals hydrostatically compressed in the SiO
2
matrix at pressures of about 10 kbar. The 187-cm
–1
mode corresponds to resonance at the Fröhlich frequency.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782619040262</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Analysis ; ANIONS ; CATIONS ; Chemical synthesis ; Composite Semiconductors ; CONFINEMENT ; Indium antimonide ; INDIUM ANTIMONIDES ; Intermetallic compounds ; ION BEAMS ; Magnetic Materials ; Magnetism ; Microcrystalline ; Nanocrystalline ; NANOCRYSTALS ; NANOSCIENCE AND NANOTECHNOLOGY ; Oxide coatings ; PHONONS ; Physics ; Physics and Astronomy ; Porous ; RAMAN EFFECT ; RAMAN SPECTRA ; Raman spectroscopy ; Silicon ; Silicon dioxide ; SILICON OXIDES ; SPHERICAL CONFIGURATION ; STRAINS ; SURFACES ; SYNTHESIS</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.493-498</ispartof><rights>Pleiades Publishing, Ltd. 2019</rights><rights>COPYRIGHT 2019 Springer</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c431t-5673c65669f6a2b1b042159e007830f11957757fcfb79e9a85fc10208b4718ce3</citedby><cites>FETCH-LOGICAL-c431t-5673c65669f6a2b1b042159e007830f11957757fcfb79e9a85fc10208b4718ce3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782619040262$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782619040262$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22945030$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Tyschenko, I. E.</creatorcontrib><creatorcontrib>Volodin, V. A.</creatorcontrib><creatorcontrib>Popov, V. P.</creatorcontrib><title>Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The Raman spectra of SiO
2
films containing InSb spherical nanocrystals produced by ion-beam synthesis are studied. TO- and LO-like modes in the spectra of the InSb nanocrystals are detected at frequencies of 187 and 195 cm
–1
, respectively. The shift of these modes to high frequencies with respect to the corresponding frequencies in InSb bulk crystals is analyzed from the viewpoint of the influence of the quantum-confinement effect, strains in nanocrystals, the surface phonon frequency, and scattering at the frequency corresponding to stretched anion–cation modes at the surface of polar spherical nanocrystals. The position of the 195-cm
–1
mode corresponds to LO phonons in InSb nanocrystals hydrostatically compressed in the SiO
2
matrix at pressures of about 10 kbar. The 187-cm
–1
mode corresponds to resonance at the Fröhlich frequency.</description><subject>Analysis</subject><subject>ANIONS</subject><subject>CATIONS</subject><subject>Chemical synthesis</subject><subject>Composite Semiconductors</subject><subject>CONFINEMENT</subject><subject>Indium antimonide</subject><subject>INDIUM ANTIMONIDES</subject><subject>Intermetallic compounds</subject><subject>ION BEAMS</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Microcrystalline</subject><subject>Nanocrystalline</subject><subject>NANOCRYSTALS</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>Oxide coatings</subject><subject>PHONONS</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Porous</subject><subject>RAMAN EFFECT</subject><subject>RAMAN SPECTRA</subject><subject>Raman spectroscopy</subject><subject>Silicon</subject><subject>Silicon dioxide</subject><subject>SILICON OXIDES</subject><subject>SPHERICAL CONFIGURATION</subject><subject>STRAINS</subject><subject>SURFACES</subject><subject>SYNTHESIS</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kc1q3DAUhU1oIGnSB-jO0LUn9-rXWobQNAOhA3GTrZE1UkbBI08lBTp9-si4kEUJWkgcfedwpFtVXxFWiJRddQiCypYIVMCACHJSnSMoaAST6tN8FrSZ78-qzym9ACC2nJ1XTw96r0PdGZ2zjT481z7U69ANdXfYFcHosf6pw2TiMWU9pno9haY7hryzyf-12xnv_OhNkTd__NbWt37cp8vq1BXafvm3X1SPt99_3dw195sf65vr-8YwirnhQlIjuBDKCU0GHIAR5MoCyJaCQ1RcSi6dcYNUVumWO4NAoB2YxNZYelF9W3KnlH2fjM_W7EqXYE3uCVGMA4V36hCn36825f5leo2hFCtMSQNKBC_UaqGe9Wh7H9yUozZlbe1-fp91vujXvGWCoWBzLC4GE6eUonX9Ifq9jsceoZ-n0v83leIhiycd5t-28b3Kx6Y3ek2LYg</recordid><startdate>20190401</startdate><enddate>20190401</enddate><creator>Tyschenko, I. E.</creator><creator>Volodin, V. A.</creator><creator>Popov, V. P.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20190401</creationdate><title>Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films</title><author>Tyschenko, I. E. ; Volodin, V. A. ; Popov, V. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c431t-5673c65669f6a2b1b042159e007830f11957757fcfb79e9a85fc10208b4718ce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Analysis</topic><topic>ANIONS</topic><topic>CATIONS</topic><topic>Chemical synthesis</topic><topic>Composite Semiconductors</topic><topic>CONFINEMENT</topic><topic>Indium antimonide</topic><topic>INDIUM ANTIMONIDES</topic><topic>Intermetallic compounds</topic><topic>ION BEAMS</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Microcrystalline</topic><topic>Nanocrystalline</topic><topic>NANOCRYSTALS</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>Oxide coatings</topic><topic>PHONONS</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Porous</topic><topic>RAMAN EFFECT</topic><topic>RAMAN SPECTRA</topic><topic>Raman spectroscopy</topic><topic>Silicon</topic><topic>Silicon dioxide</topic><topic>SILICON OXIDES</topic><topic>SPHERICAL CONFIGURATION</topic><topic>STRAINS</topic><topic>SURFACES</topic><topic>SYNTHESIS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tyschenko, I. E.</creatorcontrib><creatorcontrib>Volodin, V. A.</creatorcontrib><creatorcontrib>Popov, V. P.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tyschenko, I. E.</au><au>Volodin, V. A.</au><au>Popov, V. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2019-04-01</date><risdate>2019</risdate><volume>53</volume><issue>4</issue><spage>493</spage><epage>498</epage><pages>493-498</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The Raman spectra of SiO
2
films containing InSb spherical nanocrystals produced by ion-beam synthesis are studied. TO- and LO-like modes in the spectra of the InSb nanocrystals are detected at frequencies of 187 and 195 cm
–1
, respectively. The shift of these modes to high frequencies with respect to the corresponding frequencies in InSb bulk crystals is analyzed from the viewpoint of the influence of the quantum-confinement effect, strains in nanocrystals, the surface phonon frequency, and scattering at the frequency corresponding to stretched anion–cation modes at the surface of polar spherical nanocrystals. The position of the 195-cm
–1
mode corresponds to LO phonons in InSb nanocrystals hydrostatically compressed in the SiO
2
matrix at pressures of about 10 kbar. The 187-cm
–1
mode corresponds to resonance at the Fröhlich frequency.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782619040262</doi><tpages>6</tpages></addata></record> |
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| ispartof | Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.493-498 |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Analysis ANIONS CATIONS Chemical synthesis Composite Semiconductors CONFINEMENT Indium antimonide INDIUM ANTIMONIDES Intermetallic compounds ION BEAMS Magnetic Materials Magnetism Microcrystalline Nanocrystalline NANOCRYSTALS NANOSCIENCE AND NANOTECHNOLOGY Oxide coatings PHONONS Physics Physics and Astronomy Porous RAMAN EFFECT RAMAN SPECTRA Raman spectroscopy Silicon Silicon dioxide SILICON OXIDES SPHERICAL CONFIGURATION STRAINS SURFACES SYNTHESIS |
| title | Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films |
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