Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium
The influence of rapid thermal annealing on the electrical and radiative properties of Ge:Sb/Si(001) epitaxial layers with an antimony concentration substantially higher than its equilibrium solubility in germanium is investigated. Local variations in the electrical and luminescence properties of n...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2019-07, Vol.53 (7), p.882-886 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Yurasov, D. V. Baidakova, N. A. Drozdov, M. N. Morozova, E. E. Kalinnikov, M. A. Novikov, A. V. |
| description | The influence of rapid thermal annealing on the electrical and radiative properties of Ge:Sb/Si(001) epitaxial layers with an antimony concentration substantially higher than its equilibrium solubility in germanium is investigated. Local variations in the electrical and luminescence properties of
n
-Ge/Si(001) throughout the structure depth are investigated by means of the precise chemical etching of Ge. It is shown that a variation in the properties of such layers at relatively low (≤500°C) annealing temperatures (decrease in the electron concentration and photoluminescence intensity) occur in the absence of the noticeable diffusion-related redistribution of dopant atoms. Variations in the electrical and luminescence properties of Ge:Sb layers at relatively high (≥700°C) annealing temperatures are caused by the substantial redistribution of Sb due to its bulk diffusion and desorption from the surface. In particular, Sb diffusion leads to the formation of doped layers in initially undoped parts of the studied structures, which start to give a substantial contribution to the resulting conductivity of the structure and its photoluminescence signal. |
| doi_str_mv | 10.1134/S106378261907025X |
| format | Article |
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n
-Ge/Si(001) throughout the structure depth are investigated by means of the precise chemical etching of Ge. It is shown that a variation in the properties of such layers at relatively low (≤500°C) annealing temperatures (decrease in the electron concentration and photoluminescence intensity) occur in the absence of the noticeable diffusion-related redistribution of dopant atoms. Variations in the electrical and luminescence properties of Ge:Sb layers at relatively high (≥700°C) annealing temperatures are caused by the substantial redistribution of Sb due to its bulk diffusion and desorption from the surface. In particular, Sb diffusion leads to the formation of doped layers in initially undoped parts of the studied structures, which start to give a substantial contribution to the resulting conductivity of the structure and its photoluminescence signal.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S106378261907025X</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Analysis ; ANNEALING ; ANTIMONY ; Chemical etching ; CONCENTRATION RATIO ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DESORPTION ; DIFFUSION ; Diffusion layers ; DOPED MATERIALS ; Electric properties ; Electrical resistivity ; Electronic Properties of Semiconductors ; Epitaxial layers ; EPITAXY ; ETCHING ; GERMANIUM ; Luminescence ; Magnetic Materials ; Magnetism ; Optical properties ; Organic chemistry ; PHOTOLUMINESCENCE ; Physics ; Physics and Astronomy ; SIGNALS ; SILICON ; SOLUBILITY</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2019-07, Vol.53 (7), p.882-886</ispartof><rights>Pleiades Publishing, Ltd. 2019</rights><rights>COPYRIGHT 2019 Springer</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-6d1d977d03f9106a49632d0ff5c5cbb77d2423aa3998d13b208d3abc53d52f6f3</citedby><cites>FETCH-LOGICAL-c383t-6d1d977d03f9106a49632d0ff5c5cbb77d2423aa3998d13b208d3abc53d52f6f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S106378261907025X$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S106378261907025X$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22944942$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Yurasov, D. V.</creatorcontrib><creatorcontrib>Baidakova, N. A.</creatorcontrib><creatorcontrib>Drozdov, M. N.</creatorcontrib><creatorcontrib>Morozova, E. E.</creatorcontrib><creatorcontrib>Kalinnikov, M. A.</creatorcontrib><creatorcontrib>Novikov, A. V.</creatorcontrib><title>Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The influence of rapid thermal annealing on the electrical and radiative properties of Ge:Sb/Si(001) epitaxial layers with an antimony concentration substantially higher than its equilibrium solubility in germanium is investigated. Local variations in the electrical and luminescence properties of
n
-Ge/Si(001) throughout the structure depth are investigated by means of the precise chemical etching of Ge. It is shown that a variation in the properties of such layers at relatively low (≤500°C) annealing temperatures (decrease in the electron concentration and photoluminescence intensity) occur in the absence of the noticeable diffusion-related redistribution of dopant atoms. Variations in the electrical and luminescence properties of Ge:Sb layers at relatively high (≥700°C) annealing temperatures are caused by the substantial redistribution of Sb due to its bulk diffusion and desorption from the surface. In particular, Sb diffusion leads to the formation of doped layers in initially undoped parts of the studied structures, which start to give a substantial contribution to the resulting conductivity of the structure and its photoluminescence signal.</description><subject>Analysis</subject><subject>ANNEALING</subject><subject>ANTIMONY</subject><subject>Chemical etching</subject><subject>CONCENTRATION RATIO</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DESORPTION</subject><subject>DIFFUSION</subject><subject>Diffusion layers</subject><subject>DOPED MATERIALS</subject><subject>Electric properties</subject><subject>Electrical resistivity</subject><subject>Electronic Properties of Semiconductors</subject><subject>Epitaxial layers</subject><subject>EPITAXY</subject><subject>ETCHING</subject><subject>GERMANIUM</subject><subject>Luminescence</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Optical properties</subject><subject>Organic chemistry</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>SIGNALS</subject><subject>SILICON</subject><subject>SOLUBILITY</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kU1rGzEQhpeSQpO0P6A3QS_JYRN97Yd6MyZNDYYW3EJvi1Y7shV2JUfSJvhH9D93jEt7CEEHaWbe52VGUxQfGb1hTMjbDaO1aFpeM0Ubyqtfb4pzRhUta9mos-O7FuWx_q64SOmBUsbaSp4Xv1fejjN4AyRYsvAe9Oj8lgRP8g7I9xj2ELODdCzfw-dNf7txV4hfk7U-QEzk2eUd0R7Z7KbgD2QZ0M3nqLNDl0UfnoCsciJ3j7MbXR_dPJFNGOceo3wgzqNvnLTH_PvirdVjgg9_78vi55e7H8uv5frb_Wq5WJdGtCKX9cAG1TQDFVbhYFqqWvCBWluZyvQ9VrjkQmuhVDsw0XPaDkL3phJDxW1txWXx6eQbUnZdMi6D2ZmA05vcca6kVGjwT7WP4XGGlLuHMEePjaGmwg9kSjaoujmptnqEznkbcHSDZ4DJoSdYh_lFpbAL1kqFADsBJoaUIthuH92k46FjtDsus3uxTGT4iUmo9VuI_1t5HfoDOwugPA</recordid><startdate>20190701</startdate><enddate>20190701</enddate><creator>Yurasov, D. V.</creator><creator>Baidakova, N. A.</creator><creator>Drozdov, M. N.</creator><creator>Morozova, E. E.</creator><creator>Kalinnikov, M. A.</creator><creator>Novikov, A. V.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20190701</creationdate><title>Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium</title><author>Yurasov, D. V. ; Baidakova, N. A. ; Drozdov, M. N. ; Morozova, E. E. ; Kalinnikov, M. A. ; Novikov, A. 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V.</creatorcontrib><creatorcontrib>Baidakova, N. A.</creatorcontrib><creatorcontrib>Drozdov, M. N.</creatorcontrib><creatorcontrib>Morozova, E. E.</creatorcontrib><creatorcontrib>Kalinnikov, M. A.</creatorcontrib><creatorcontrib>Novikov, A. V.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yurasov, D. V.</au><au>Baidakova, N. A.</au><au>Drozdov, M. N.</au><au>Morozova, E. E.</au><au>Kalinnikov, M. A.</au><au>Novikov, A. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2019-07-01</date><risdate>2019</risdate><volume>53</volume><issue>7</issue><spage>882</spage><epage>886</epage><pages>882-886</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The influence of rapid thermal annealing on the electrical and radiative properties of Ge:Sb/Si(001) epitaxial layers with an antimony concentration substantially higher than its equilibrium solubility in germanium is investigated. Local variations in the electrical and luminescence properties of
n
-Ge/Si(001) throughout the structure depth are investigated by means of the precise chemical etching of Ge. It is shown that a variation in the properties of such layers at relatively low (≤500°C) annealing temperatures (decrease in the electron concentration and photoluminescence intensity) occur in the absence of the noticeable diffusion-related redistribution of dopant atoms. Variations in the electrical and luminescence properties of Ge:Sb layers at relatively high (≥700°C) annealing temperatures are caused by the substantial redistribution of Sb due to its bulk diffusion and desorption from the surface. In particular, Sb diffusion leads to the formation of doped layers in initially undoped parts of the studied structures, which start to give a substantial contribution to the resulting conductivity of the structure and its photoluminescence signal.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S106378261907025X</doi><tpages>5</tpages></addata></record> |
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| subjects | Analysis ANNEALING ANTIMONY Chemical etching CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DESORPTION DIFFUSION Diffusion layers DOPED MATERIALS Electric properties Electrical resistivity Electronic Properties of Semiconductors Epitaxial layers EPITAXY ETCHING GERMANIUM Luminescence Magnetic Materials Magnetism Optical properties Organic chemistry PHOTOLUMINESCENCE Physics Physics and Astronomy SIGNALS SILICON SOLUBILITY |
| title | Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium |
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