The Effect of Irradiation with Si+ Ions on Resistive Switching in Memristive Structures Based on Yttria-Stabilized Zirconia
We have studied the resistive switching in memristive structures based on 40-nm-thick yttria-stabilized zirconia (YSZ) films exposed to 6-keV Si + ion irradiation to a total dose of 5.4 × 10 15 cm –2 . It is established that the ion irradiation leads to increased stability of the parameters of resis...
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| Veröffentlicht in: | Technical physics letters 2019-07, Vol.45 (7), p.690-693 |
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| creator | Okulich, E. V. Koryazhkina, M. N. Korolev, D. S. Belov, A. I. Shenina, M. E. Mikhaylov, A. N. Tetelbaum, D. I. Antonov, I. N. Dudin, Yu. A. |
| description | We have studied the resistive switching in memristive structures based on 40-nm-thick yttria-stabilized zirconia (YSZ) films exposed to 6-keV Si
+
ion irradiation to a total dose of 5.4 × 10
15
cm
–2
. It is established that the ion irradiation leads to increased stability of the parameters of resistive switching in YSZ based memristive structures. This effect is related to the fact that the diameter of conducting filaments in irradiated structures is limited by lateral dimensions of the region of atomic displacement cascades (i.e., the region occupied by point defects produced by bombarding ions). The oxidation of ion-modified filaments during resistive switching proceeds more effectively and leads to increasing resistance in the high-resistance state of memristive structures. |
| doi_str_mv | 10.1134/S1063785019070253 |
| format | Article |
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+
ion irradiation to a total dose of 5.4 × 10
15
cm
–2
. It is established that the ion irradiation leads to increased stability of the parameters of resistive switching in YSZ based memristive structures. This effect is related to the fact that the diameter of conducting filaments in irradiated structures is limited by lateral dimensions of the region of atomic displacement cascades (i.e., the region occupied by point defects produced by bombarding ions). The oxidation of ion-modified filaments during resistive switching proceeds more effectively and leads to increasing resistance in the high-resistance state of memristive structures.</description><identifier>ISSN: 1063-7850</identifier><identifier>EISSN: 1090-6533</identifier><identifier>DOI: 10.1134/S1063785019070253</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>ATOMIC DISPLACEMENTS ; Cascades ; Classical and Continuum Physics ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DOSES ; FILAMENTS ; Ion irradiation ; KEV RANGE ; OXIDATION ; Physics ; Physics and Astronomy ; POINT DEFECTS ; Radiation dosage ; SILICON IONS ; Switching ; Thick films ; THIN FILMS ; Yttria-stabilized zirconia ; Yttrium oxide ; YTTRIUM OXIDES ; Zirconium dioxide ; ZIRCONIUM OXIDES</subject><ispartof>Technical physics letters, 2019-07, Vol.45 (7), p.690-693</ispartof><rights>Pleiades Publishing, Ltd. 2019</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-6b24d2cad602e1a321d2ce0c8be386d9dfcd4dede45bb5c512f32cc1fa4e56163</citedby><cites>FETCH-LOGICAL-c344t-6b24d2cad602e1a321d2ce0c8be386d9dfcd4dede45bb5c512f32cc1fa4e56163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063785019070253$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063785019070253$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,777,781,882,27905,27906,41469,42538,51300</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22929204$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Okulich, E. V.</creatorcontrib><creatorcontrib>Koryazhkina, M. N.</creatorcontrib><creatorcontrib>Korolev, D. S.</creatorcontrib><creatorcontrib>Belov, A. I.</creatorcontrib><creatorcontrib>Shenina, M. E.</creatorcontrib><creatorcontrib>Mikhaylov, A. N.</creatorcontrib><creatorcontrib>Tetelbaum, D. I.</creatorcontrib><creatorcontrib>Antonov, I. N.</creatorcontrib><creatorcontrib>Dudin, Yu. A.</creatorcontrib><title>The Effect of Irradiation with Si+ Ions on Resistive Switching in Memristive Structures Based on Yttria-Stabilized Zirconia</title><title>Technical physics letters</title><addtitle>Tech. Phys. Lett</addtitle><description>We have studied the resistive switching in memristive structures based on 40-nm-thick yttria-stabilized zirconia (YSZ) films exposed to 6-keV Si
+
ion irradiation to a total dose of 5.4 × 10
15
cm
–2
. It is established that the ion irradiation leads to increased stability of the parameters of resistive switching in YSZ based memristive structures. This effect is related to the fact that the diameter of conducting filaments in irradiated structures is limited by lateral dimensions of the region of atomic displacement cascades (i.e., the region occupied by point defects produced by bombarding ions). The oxidation of ion-modified filaments during resistive switching proceeds more effectively and leads to increasing resistance in the high-resistance state of memristive structures.</description><subject>ATOMIC DISPLACEMENTS</subject><subject>Cascades</subject><subject>Classical and Continuum Physics</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DOSES</subject><subject>FILAMENTS</subject><subject>Ion irradiation</subject><subject>KEV RANGE</subject><subject>OXIDATION</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>POINT DEFECTS</subject><subject>Radiation dosage</subject><subject>SILICON IONS</subject><subject>Switching</subject><subject>Thick films</subject><subject>THIN FILMS</subject><subject>Yttria-stabilized zirconia</subject><subject>Yttrium oxide</subject><subject>YTTRIUM OXIDES</subject><subject>Zirconium dioxide</subject><subject>ZIRCONIUM OXIDES</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1UU1Lw0AQDaJgrf4AbwseJbqfaXLUUrVQEUw96CVsdifNljapuxtF_fNuqNKDyBx25s17j7dMFJ0SfEEI45c5wQkbpQKTDI8wFWwvGhCc4TgRjO33fcLifn8YHTm3xBinVGSD6GteA5pUFSiP2gpNrZXaSG_aBr0bX6PcnKNp2zgUgEdwxnnzBigPO1WbZoFMg-5hbX9xbzvlOwsOXUsHulc9e2-NjHMvS7MynwF8MVa1jZHH0UElVw5Oft5h9HQzmY_v4tnD7XR8NYsV49zHSUm5pkrqBFMgklESJsAqLYGlic50pTTXoIGLshRKEFoxqhSpJAeRkIQNo7OtbxtSFk4ZD6oOCZrw6YLSLBTmO9bGtq8dOF8s2842IVjgpJRQSnjvRbYsZVvnLFTFxpq1tB8FwUV_ieLPJYKGbjUucJsF2J3z_6Jvu7eLcA</recordid><startdate>20190701</startdate><enddate>20190701</enddate><creator>Okulich, E. V.</creator><creator>Koryazhkina, M. N.</creator><creator>Korolev, D. S.</creator><creator>Belov, A. I.</creator><creator>Shenina, M. E.</creator><creator>Mikhaylov, A. N.</creator><creator>Tetelbaum, D. I.</creator><creator>Antonov, I. N.</creator><creator>Dudin, Yu. A.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20190701</creationdate><title>The Effect of Irradiation with Si+ Ions on Resistive Switching in Memristive Structures Based on Yttria-Stabilized Zirconia</title><author>Okulich, E. V. ; Koryazhkina, M. N. ; Korolev, D. S. ; Belov, A. I. ; Shenina, M. E. ; Mikhaylov, A. N. ; Tetelbaum, D. I. ; Antonov, I. N. ; Dudin, Yu. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-6b24d2cad602e1a321d2ce0c8be386d9dfcd4dede45bb5c512f32cc1fa4e56163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>ATOMIC DISPLACEMENTS</topic><topic>Cascades</topic><topic>Classical and Continuum Physics</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DOSES</topic><topic>FILAMENTS</topic><topic>Ion irradiation</topic><topic>KEV RANGE</topic><topic>OXIDATION</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>POINT DEFECTS</topic><topic>Radiation dosage</topic><topic>SILICON IONS</topic><topic>Switching</topic><topic>Thick films</topic><topic>THIN FILMS</topic><topic>Yttria-stabilized zirconia</topic><topic>Yttrium oxide</topic><topic>YTTRIUM OXIDES</topic><topic>Zirconium dioxide</topic><topic>ZIRCONIUM OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Okulich, E. V.</creatorcontrib><creatorcontrib>Koryazhkina, M. N.</creatorcontrib><creatorcontrib>Korolev, D. S.</creatorcontrib><creatorcontrib>Belov, A. I.</creatorcontrib><creatorcontrib>Shenina, M. E.</creatorcontrib><creatorcontrib>Mikhaylov, A. N.</creatorcontrib><creatorcontrib>Tetelbaum, D. I.</creatorcontrib><creatorcontrib>Antonov, I. N.</creatorcontrib><creatorcontrib>Dudin, Yu. A.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Okulich, E. V.</au><au>Koryazhkina, M. N.</au><au>Korolev, D. S.</au><au>Belov, A. I.</au><au>Shenina, M. E.</au><au>Mikhaylov, A. N.</au><au>Tetelbaum, D. I.</au><au>Antonov, I. N.</au><au>Dudin, Yu. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Effect of Irradiation with Si+ Ions on Resistive Switching in Memristive Structures Based on Yttria-Stabilized Zirconia</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><date>2019-07-01</date><risdate>2019</risdate><volume>45</volume><issue>7</issue><spage>690</spage><epage>693</epage><pages>690-693</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>We have studied the resistive switching in memristive structures based on 40-nm-thick yttria-stabilized zirconia (YSZ) films exposed to 6-keV Si
+
ion irradiation to a total dose of 5.4 × 10
15
cm
–2
. It is established that the ion irradiation leads to increased stability of the parameters of resistive switching in YSZ based memristive structures. This effect is related to the fact that the diameter of conducting filaments in irradiated structures is limited by lateral dimensions of the region of atomic displacement cascades (i.e., the region occupied by point defects produced by bombarding ions). The oxidation of ion-modified filaments during resistive switching proceeds more effectively and leads to increasing resistance in the high-resistance state of memristive structures.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063785019070253</doi><tpages>4</tpages></addata></record> |
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| ispartof | Technical physics letters, 2019-07, Vol.45 (7), p.690-693 |
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| subjects | ATOMIC DISPLACEMENTS Cascades Classical and Continuum Physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DOSES FILAMENTS Ion irradiation KEV RANGE OXIDATION Physics Physics and Astronomy POINT DEFECTS Radiation dosage SILICON IONS Switching Thick films THIN FILMS Yttria-stabilized zirconia Yttrium oxide YTTRIUM OXIDES Zirconium dioxide ZIRCONIUM OXIDES |
| title | The Effect of Irradiation with Si+ Ions on Resistive Switching in Memristive Structures Based on Yttria-Stabilized Zirconia |
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