Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction
It is shown that two electrons situated in a quantum well near a metallic electrode are attracted to each other due to the Bychkov–Rashba spin–orbit interaction (SOI) and electrostatic image forces. For quite accessible values of the characteristic parameters of the system, the effective attraction...
Gespeichert in:
| Veröffentlicht in: | Journal of experimental and theoretical physics 2018-12, Vol.127 (6), p.1130-1135 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1135 |
|---|---|
| container_issue | 6 |
| container_start_page | 1130 |
| container_title | Journal of experimental and theoretical physics |
| container_volume | 127 |
| creator | Mahmoodian, M. M. Chaplik, A. V. |
| description | It is shown that two electrons situated in a quantum well near a metallic electrode are attracted to each other due to the Bychkov–Rashba spin–orbit interaction (SOI) and electrostatic image forces. For quite accessible values of the characteristic parameters of the system, the effective attraction due to the SOI dominates over the Coulomb repulsion, and the formation of a bielectron becomes possible. The theory of the effect is especially simple and clear in the case of a quantum wire. The binding energy of the electron pair significantly increases under the application of a gate voltage of appropriate polarity. |
| doi_str_mv | 10.1134/S1063776118120075 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22917756</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A575250182</galeid><sourcerecordid>A575250182</sourcerecordid><originalsourceid>FETCH-LOGICAL-c369t-3a96eae9b219dc9ad5e3f0c1b35ee7ed7b9c68cbbd24d8fec02205ddd8e5f67d3</originalsourceid><addsrcrecordid>eNp1kc9qGzEQh5eQQPOnD9CbIKcc1pG0lrQ6OmnSGlxMsulZaKVZR8GWXEkLya3v0Dfsk1TGgRBK0EFi5vuGn5iq-kLwhJBmetkRzBshOCEtoRgLdlAdEyxxzRmWh7s3b-pd_1N1ktITxrilWB5Xd1dh9BZ1WWdAYUDao5s1mByDR84jjX4su9KNo8ljBPR1BJQDyo-Auq3zf3__WcbeZTT3GaI22QV_Vh0Nep3g8-t9Wv28vXm4_l4vlt_m17NFbRouc91oyUGD7CmR1khtGTQDNqRvGIAAK3ppeGv63tKpbQcwmFLMrLUtsIEL25xW5_u5IWWnknEZzKMJ3pf0ilJJhGD8jdrG8GuElNVTGKMvwRQl7ZTTllFRqMmeWuk1KOeHkMtvyrGwcWUmDK7UZ0wwyjBpaREu3gmFyfCcV3pMSc27-_cs2bMmhpQiDGob3UbHF0Ww2i1P_be84tC9kwrrVxDfYn8s_QO0xpn8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2184628527</pqid></control><display><type>article</type><title>Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction</title><source>SpringerLink Journals - AutoHoldings</source><creator>Mahmoodian, M. M. ; Chaplik, A. V.</creator><creatorcontrib>Mahmoodian, M. M. ; Chaplik, A. V.</creatorcontrib><description>It is shown that two electrons situated in a quantum well near a metallic electrode are attracted to each other due to the Bychkov–Rashba spin–orbit interaction (SOI) and electrostatic image forces. For quite accessible values of the characteristic parameters of the system, the effective attraction due to the SOI dominates over the Coulomb repulsion, and the formation of a bielectron becomes possible. The theory of the effect is especially simple and clear in the case of a quantum wire. The binding energy of the electron pair significantly increases under the application of a gate voltage of appropriate polarity.</description><identifier>ISSN: 1063-7761</identifier><identifier>EISSN: 1090-6509</identifier><identifier>DOI: 10.1134/S1063776118120075</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>BINDING ENERGY ; BOUND STATE ; Classical and Quantum Gravitation ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; COULOMB FIELD ; ELECTRON PAIRS ; Electronic Properties of Solid ; Electrons ; ELECTROSTATICS ; Elementary Particles ; Energy (Physics) ; L-S COUPLING ; MOS TRANSISTORS ; Particle and Nuclear Physics ; Physics ; Physics and Astronomy ; Polarity ; Quantum Field Theory ; QUANTUM WELLS ; QUANTUM WIRES ; Relativity Theory ; Solid State Physics ; Universities and colleges</subject><ispartof>Journal of experimental and theoretical physics, 2018-12, Vol.127 (6), p.1130-1135</ispartof><rights>Pleiades Publishing, Inc. 2018</rights><rights>COPYRIGHT 2018 Springer</rights><rights>Copyright Springer Nature B.V. 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c369t-3a96eae9b219dc9ad5e3f0c1b35ee7ed7b9c68cbbd24d8fec02205ddd8e5f67d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063776118120075$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063776118120075$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22917756$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Mahmoodian, M. M.</creatorcontrib><creatorcontrib>Chaplik, A. V.</creatorcontrib><title>Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction</title><title>Journal of experimental and theoretical physics</title><addtitle>J. Exp. Theor. Phys</addtitle><description>It is shown that two electrons situated in a quantum well near a metallic electrode are attracted to each other due to the Bychkov–Rashba spin–orbit interaction (SOI) and electrostatic image forces. For quite accessible values of the characteristic parameters of the system, the effective attraction due to the SOI dominates over the Coulomb repulsion, and the formation of a bielectron becomes possible. The theory of the effect is especially simple and clear in the case of a quantum wire. The binding energy of the electron pair significantly increases under the application of a gate voltage of appropriate polarity.</description><subject>BINDING ENERGY</subject><subject>BOUND STATE</subject><subject>Classical and Quantum Gravitation</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>COULOMB FIELD</subject><subject>ELECTRON PAIRS</subject><subject>Electronic Properties of Solid</subject><subject>Electrons</subject><subject>ELECTROSTATICS</subject><subject>Elementary Particles</subject><subject>Energy (Physics)</subject><subject>L-S COUPLING</subject><subject>MOS TRANSISTORS</subject><subject>Particle and Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Polarity</subject><subject>Quantum Field Theory</subject><subject>QUANTUM WELLS</subject><subject>QUANTUM WIRES</subject><subject>Relativity Theory</subject><subject>Solid State Physics</subject><subject>Universities and colleges</subject><issn>1063-7761</issn><issn>1090-6509</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kc9qGzEQh5eQQPOnD9CbIKcc1pG0lrQ6OmnSGlxMsulZaKVZR8GWXEkLya3v0Dfsk1TGgRBK0EFi5vuGn5iq-kLwhJBmetkRzBshOCEtoRgLdlAdEyxxzRmWh7s3b-pd_1N1ktITxrilWB5Xd1dh9BZ1WWdAYUDao5s1mByDR84jjX4su9KNo8ljBPR1BJQDyo-Auq3zf3__WcbeZTT3GaI22QV_Vh0Nep3g8-t9Wv28vXm4_l4vlt_m17NFbRouc91oyUGD7CmR1khtGTQDNqRvGIAAK3ppeGv63tKpbQcwmFLMrLUtsIEL25xW5_u5IWWnknEZzKMJ3pf0ilJJhGD8jdrG8GuElNVTGKMvwRQl7ZTTllFRqMmeWuk1KOeHkMtvyrGwcWUmDK7UZ0wwyjBpaREu3gmFyfCcV3pMSc27-_cs2bMmhpQiDGob3UbHF0Ww2i1P_be84tC9kwrrVxDfYn8s_QO0xpn8</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Mahmoodian, M. M.</creator><creator>Chaplik, A. V.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope><scope>OTOTI</scope></search><sort><creationdate>20181201</creationdate><title>Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction</title><author>Mahmoodian, M. M. ; Chaplik, A. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-3a96eae9b219dc9ad5e3f0c1b35ee7ed7b9c68cbbd24d8fec02205ddd8e5f67d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BINDING ENERGY</topic><topic>BOUND STATE</topic><topic>Classical and Quantum Gravitation</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>COULOMB FIELD</topic><topic>ELECTRON PAIRS</topic><topic>Electronic Properties of Solid</topic><topic>Electrons</topic><topic>ELECTROSTATICS</topic><topic>Elementary Particles</topic><topic>Energy (Physics)</topic><topic>L-S COUPLING</topic><topic>MOS TRANSISTORS</topic><topic>Particle and Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Polarity</topic><topic>Quantum Field Theory</topic><topic>QUANTUM WELLS</topic><topic>QUANTUM WIRES</topic><topic>Relativity Theory</topic><topic>Solid State Physics</topic><topic>Universities and colleges</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mahmoodian, M. M.</creatorcontrib><creatorcontrib>Chaplik, A. V.</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><collection>OSTI.GOV</collection><jtitle>Journal of experimental and theoretical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mahmoodian, M. M.</au><au>Chaplik, A. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction</atitle><jtitle>Journal of experimental and theoretical physics</jtitle><stitle>J. Exp. Theor. Phys</stitle><date>2018-12-01</date><risdate>2018</risdate><volume>127</volume><issue>6</issue><spage>1130</spage><epage>1135</epage><pages>1130-1135</pages><issn>1063-7761</issn><eissn>1090-6509</eissn><abstract>It is shown that two electrons situated in a quantum well near a metallic electrode are attracted to each other due to the Bychkov–Rashba spin–orbit interaction (SOI) and electrostatic image forces. For quite accessible values of the characteristic parameters of the system, the effective attraction due to the SOI dominates over the Coulomb repulsion, and the formation of a bielectron becomes possible. The theory of the effect is especially simple and clear in the case of a quantum wire. The binding energy of the electron pair significantly increases under the application of a gate voltage of appropriate polarity.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063776118120075</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7761 |
| ispartof | Journal of experimental and theoretical physics, 2018-12, Vol.127 (6), p.1130-1135 |
| issn | 1063-7761 1090-6509 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22917756 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | BINDING ENERGY BOUND STATE Classical and Quantum Gravitation CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY COULOMB FIELD ELECTRON PAIRS Electronic Properties of Solid Electrons ELECTROSTATICS Elementary Particles Energy (Physics) L-S COUPLING MOS TRANSISTORS Particle and Nuclear Physics Physics Physics and Astronomy Polarity Quantum Field Theory QUANTUM WELLS QUANTUM WIRES Relativity Theory Solid State Physics Universities and colleges |
| title | Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T03%3A04%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Bound%20State%20of%20an%20Electron%20in%20a%20MOS%20Structure%20Due%20to%20the%20Spin%E2%80%93Orbit%20Interaction&rft.jtitle=Journal%20of%20experimental%20and%20theoretical%20physics&rft.au=Mahmoodian,%20M.%20M.&rft.date=2018-12-01&rft.volume=127&rft.issue=6&rft.spage=1130&rft.epage=1135&rft.pages=1130-1135&rft.issn=1063-7761&rft.eissn=1090-6509&rft_id=info:doi/10.1134/S1063776118120075&rft_dat=%3Cgale_osti_%3EA575250182%3C/gale_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2184628527&rft_id=info:pmid/&rft_galeid=A575250182&rfr_iscdi=true |