Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films

Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te ( x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in...

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Veröffentlicht in:	Russian physics journal 2018-02, Vol.60 (10), p.1752-1757
Hauptverfasser:	Izhnin, I. I., Fitsych, E. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V., Bonchyk, A. Yu, Savytskyy, H. V., Świątek, Z.
Format:	Artikel
Sprache:	eng
Schlagworte:	Activation ANNEALING ANNIHILATION ARSENIC Condensed Matter Physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DEFECTS DENSITY Electrical measurement Electron microscopy Epitaxial growth Hadrons Heavy Ions Implantation IMPURITIES ION IMPLANTATION ION MICROPROBE ANALYSIS KEV RANGE Lasers MASS SPECTROSCOPY Mathematical and Computational Physics MOLECULAR BEAM EPITAXY N-TYPE CONDUCTORS Nuclear Physics Optical Devices OPTICAL REFLECTION Optics P-TYPE CONDUCTORS Photonics Physics Physics and Astronomy Protective coatings Secondary ion mass spectroscopy Theoretical THIN FILMS TRANSMISSION ELECTRON MICROSCOPY VISIBLE SPECTRA
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