Novel hole selective CrOx contact for dopant-free back contact silicon solar cells
[Display omitted] •The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrOx, x
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| Veröffentlicht in: | Materials research bulletin 2018-07, Vol.103, p.77-82 |
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| container_title | Materials research bulletin |
| container_volume | 103 |
| creator | Lin, Wenjie Wu, Weiliang Bao, Jie Liu, Zongtao Qiu, Kaifu Cai, Lun Yao, Zhirong Deng, Youjun Liang, Zongcun Shen, Hui |
| description | [Display omitted]
•The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrOx, x |
| doi_str_mv | 10.1016/j.materresbull.2018.03.032 |
| format | Article |
| fullrecord | <record><control><sourceid>elsevier_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22805141</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0025540817344434</els_id><sourcerecordid>S0025540817344434</sourcerecordid><originalsourceid>FETCH-LOGICAL-c352t-3f83d91d2e0cf9512901d6f1da69be1b4e1c501cc00f1d31bf2d3e889597f9683</originalsourceid><addsrcrecordid>eNqNUNtKxDAQDaLgevmHoM-tk6SX1DdZr7C4IPoc2nTCZs02S1IX_XtTVsRHYWCGmXPOzBxCLhjkDFh1tc437YghYOw-nMs5MJmDSMEPyIzJWmQF5_UhmQHwMisLkMfkJMY1ABSyrmfk5dnv0NGVd0gjOtSj3SGdh-Un1X4YWz1S4wPt_bYdxswERNq1-v13GK2zqabRuzZQjc7FM3JkWhfx_Cefkrf7u9f5Y7ZYPjzNbxaZFiUfM2Gk6BvWcwRtmpLxBlhfGda3VdMh6wpkugSmNUBqCtYZ3guUsimb2jSVFKfkcq_r42hV1HZEvUq3DOkJxbmEkhUsoa73KB18jAGN2ga7acOXYqAmD9Va_fVQTR4qECl4It_uyZj-2FkM0xocNPY2TFt6b_8j8w1qjoIW</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Novel hole selective CrOx contact for dopant-free back contact silicon solar cells</title><source>Elsevier ScienceDirect Journals</source><creator>Lin, Wenjie ; Wu, Weiliang ; Bao, Jie ; Liu, Zongtao ; Qiu, Kaifu ; Cai, Lun ; Yao, Zhirong ; Deng, Youjun ; Liang, Zongcun ; Shen, Hui</creator><creatorcontrib>Lin, Wenjie ; Wu, Weiliang ; Bao, Jie ; Liu, Zongtao ; Qiu, Kaifu ; Cai, Lun ; Yao, Zhirong ; Deng, Youjun ; Liang, Zongcun ; Shen, Hui</creatorcontrib><description>[Display omitted]
•The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrOx, x < 3) with a low melting point for high stability and high performance.•CrOx is first applied in silicon based solar cell as the emitter.•The back contact solar cell which demonstrated an efficiency of 15.8% and high stability was fabricated, by implementing the multilayer films of CrOx (5 nm)/Au (4 nm)/ CrOx (5 nm) capped by Ag (500 nm) as the emitter.
The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrOx, x < 3) with a low melting point for high stability and high performance. In this contribution, CrOx is first applied in silicon based solar cell as the emitter. Integrating 5 nm CrOx and 2 nm LiFx into solar cell as the emitter and the back surface filed, resulted in a device efficiency of 13.6%. For further improvement, the back contact solar cell reaching an efficiency of 15.8% was fabricated, by implementing the multilayer films of CrOx (5 nm)/Au (4 nm)/ CrOx (5 nm) as the emitter. The formation of Cr(OH)3 in ambient condition, resulted in a lower work function (4.8 eV) of the CrOx film. Furthermore, the multilayer back contact solar cell demonstrated a high stability due to CrOx covered with 500 nm Ag, when stored in ambient air longer than 170 days.</description><identifier>ISSN: 0025-5408</identifier><identifier>EISSN: 1873-4227</identifier><identifier>DOI: 10.1016/j.materresbull.2018.03.032</identifier><language>eng</language><publisher>United States: Elsevier Ltd</publisher><subject>Back contact ; BACK CONTACT SOLAR CELLS ; CHROMIUM HYDROXIDES ; CHROMIUM OXIDES ; Chromium trioxide ; COATINGS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Dopant-free ; DOPED MATERIALS ; ENERGY EFFICIENCY ; HETEROJUNCTIONS ; Hole selective contact ; HOLES ; Silicon heterojunction solar cells ; SILICON SOLAR CELLS ; SILVER ; SOLAR ENERGY ; THIN FILMS ; WORK FUNCTIONS</subject><ispartof>Materials research bulletin, 2018-07, Vol.103, p.77-82</ispartof><rights>2018 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-3f83d91d2e0cf9512901d6f1da69be1b4e1c501cc00f1d31bf2d3e889597f9683</citedby><cites>FETCH-LOGICAL-c352t-3f83d91d2e0cf9512901d6f1da69be1b4e1c501cc00f1d31bf2d3e889597f9683</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0025540817344434$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,776,780,881,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22805141$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lin, Wenjie</creatorcontrib><creatorcontrib>Wu, Weiliang</creatorcontrib><creatorcontrib>Bao, Jie</creatorcontrib><creatorcontrib>Liu, Zongtao</creatorcontrib><creatorcontrib>Qiu, Kaifu</creatorcontrib><creatorcontrib>Cai, Lun</creatorcontrib><creatorcontrib>Yao, Zhirong</creatorcontrib><creatorcontrib>Deng, Youjun</creatorcontrib><creatorcontrib>Liang, Zongcun</creatorcontrib><creatorcontrib>Shen, Hui</creatorcontrib><title>Novel hole selective CrOx contact for dopant-free back contact silicon solar cells</title><title>Materials research bulletin</title><description>[Display omitted]
•The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrOx, x < 3) with a low melting point for high stability and high performance.•CrOx is first applied in silicon based solar cell as the emitter.•The back contact solar cell which demonstrated an efficiency of 15.8% and high stability was fabricated, by implementing the multilayer films of CrOx (5 nm)/Au (4 nm)/ CrOx (5 nm) capped by Ag (500 nm) as the emitter.
The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrOx, x < 3) with a low melting point for high stability and high performance. In this contribution, CrOx is first applied in silicon based solar cell as the emitter. Integrating 5 nm CrOx and 2 nm LiFx into solar cell as the emitter and the back surface filed, resulted in a device efficiency of 13.6%. For further improvement, the back contact solar cell reaching an efficiency of 15.8% was fabricated, by implementing the multilayer films of CrOx (5 nm)/Au (4 nm)/ CrOx (5 nm) as the emitter. The formation of Cr(OH)3 in ambient condition, resulted in a lower work function (4.8 eV) of the CrOx film. Furthermore, the multilayer back contact solar cell demonstrated a high stability due to CrOx covered with 500 nm Ag, when stored in ambient air longer than 170 days.</description><subject>Back contact</subject><subject>BACK CONTACT SOLAR CELLS</subject><subject>CHROMIUM HYDROXIDES</subject><subject>CHROMIUM OXIDES</subject><subject>Chromium trioxide</subject><subject>COATINGS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Dopant-free</subject><subject>DOPED MATERIALS</subject><subject>ENERGY EFFICIENCY</subject><subject>HETEROJUNCTIONS</subject><subject>Hole selective contact</subject><subject>HOLES</subject><subject>Silicon heterojunction solar cells</subject><subject>SILICON SOLAR CELLS</subject><subject>SILVER</subject><subject>SOLAR ENERGY</subject><subject>THIN FILMS</subject><subject>WORK FUNCTIONS</subject><issn>0025-5408</issn><issn>1873-4227</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqNUNtKxDAQDaLgevmHoM-tk6SX1DdZr7C4IPoc2nTCZs02S1IX_XtTVsRHYWCGmXPOzBxCLhjkDFh1tc437YghYOw-nMs5MJmDSMEPyIzJWmQF5_UhmQHwMisLkMfkJMY1ABSyrmfk5dnv0NGVd0gjOtSj3SGdh-Un1X4YWz1S4wPt_bYdxswERNq1-v13GK2zqabRuzZQjc7FM3JkWhfx_Cefkrf7u9f5Y7ZYPjzNbxaZFiUfM2Gk6BvWcwRtmpLxBlhfGda3VdMh6wpkugSmNUBqCtYZ3guUsimb2jSVFKfkcq_r42hV1HZEvUq3DOkJxbmEkhUsoa73KB18jAGN2ga7acOXYqAmD9Va_fVQTR4qECl4It_uyZj-2FkM0xocNPY2TFt6b_8j8w1qjoIW</recordid><startdate>20180701</startdate><enddate>20180701</enddate><creator>Lin, Wenjie</creator><creator>Wu, Weiliang</creator><creator>Bao, Jie</creator><creator>Liu, Zongtao</creator><creator>Qiu, Kaifu</creator><creator>Cai, Lun</creator><creator>Yao, Zhirong</creator><creator>Deng, Youjun</creator><creator>Liang, Zongcun</creator><creator>Shen, Hui</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20180701</creationdate><title>Novel hole selective CrOx contact for dopant-free back contact silicon solar cells</title><author>Lin, Wenjie ; Wu, Weiliang ; Bao, Jie ; Liu, Zongtao ; Qiu, Kaifu ; Cai, Lun ; Yao, Zhirong ; Deng, Youjun ; Liang, Zongcun ; Shen, Hui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-3f83d91d2e0cf9512901d6f1da69be1b4e1c501cc00f1d31bf2d3e889597f9683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Back contact</topic><topic>BACK CONTACT SOLAR CELLS</topic><topic>CHROMIUM HYDROXIDES</topic><topic>CHROMIUM OXIDES</topic><topic>Chromium trioxide</topic><topic>COATINGS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Dopant-free</topic><topic>DOPED MATERIALS</topic><topic>ENERGY EFFICIENCY</topic><topic>HETEROJUNCTIONS</topic><topic>Hole selective contact</topic><topic>HOLES</topic><topic>Silicon heterojunction solar cells</topic><topic>SILICON SOLAR CELLS</topic><topic>SILVER</topic><topic>SOLAR ENERGY</topic><topic>THIN FILMS</topic><topic>WORK FUNCTIONS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Wenjie</creatorcontrib><creatorcontrib>Wu, Weiliang</creatorcontrib><creatorcontrib>Bao, Jie</creatorcontrib><creatorcontrib>Liu, Zongtao</creatorcontrib><creatorcontrib>Qiu, Kaifu</creatorcontrib><creatorcontrib>Cai, Lun</creatorcontrib><creatorcontrib>Yao, Zhirong</creatorcontrib><creatorcontrib>Deng, Youjun</creatorcontrib><creatorcontrib>Liang, Zongcun</creatorcontrib><creatorcontrib>Shen, Hui</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Materials research bulletin</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Wenjie</au><au>Wu, Weiliang</au><au>Bao, Jie</au><au>Liu, Zongtao</au><au>Qiu, Kaifu</au><au>Cai, Lun</au><au>Yao, Zhirong</au><au>Deng, Youjun</au><au>Liang, Zongcun</au><au>Shen, Hui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Novel hole selective CrOx contact for dopant-free back contact silicon solar cells</atitle><jtitle>Materials research bulletin</jtitle><date>2018-07-01</date><risdate>2018</risdate><volume>103</volume><spage>77</spage><epage>82</epage><pages>77-82</pages><issn>0025-5408</issn><eissn>1873-4227</eissn><abstract>[Display omitted]
•The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrOx, x < 3) with a low melting point for high stability and high performance.•CrOx is first applied in silicon based solar cell as the emitter.•The back contact solar cell which demonstrated an efficiency of 15.8% and high stability was fabricated, by implementing the multilayer films of CrOx (5 nm)/Au (4 nm)/ CrOx (5 nm) capped by Ag (500 nm) as the emitter.
The dopant-free back contact solar cells are demonstrated based on hole selective contact material, chromium trioxide (CrOx, x < 3) with a low melting point for high stability and high performance. In this contribution, CrOx is first applied in silicon based solar cell as the emitter. Integrating 5 nm CrOx and 2 nm LiFx into solar cell as the emitter and the back surface filed, resulted in a device efficiency of 13.6%. For further improvement, the back contact solar cell reaching an efficiency of 15.8% was fabricated, by implementing the multilayer films of CrOx (5 nm)/Au (4 nm)/ CrOx (5 nm) as the emitter. The formation of Cr(OH)3 in ambient condition, resulted in a lower work function (4.8 eV) of the CrOx film. Furthermore, the multilayer back contact solar cell demonstrated a high stability due to CrOx covered with 500 nm Ag, when stored in ambient air longer than 170 days.</abstract><cop>United States</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.materresbull.2018.03.032</doi><tpages>6</tpages></addata></record> |
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| subjects | Back contact BACK CONTACT SOLAR CELLS CHROMIUM HYDROXIDES CHROMIUM OXIDES Chromium trioxide COATINGS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Dopant-free DOPED MATERIALS ENERGY EFFICIENCY HETEROJUNCTIONS Hole selective contact HOLES Silicon heterojunction solar cells SILICON SOLAR CELLS SILVER SOLAR ENERGY THIN FILMS WORK FUNCTIONS |
| title | Novel hole selective CrOx contact for dopant-free back contact silicon solar cells |
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