Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures

Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers...

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Veröffentlicht in:	Technical physics letters 2018-03, Vol.44 (3), p.260-262
Hauptverfasser:	Protasov, D. Yu, Gulyaev, D. V., Bakarov, A. K., Toropov, A. I., Erofeev, E. V., Zhuravlev, K. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Barrier layers Classical and Continuum Physics DOPED MATERIALS ELECTRIC FIELDS ELECTROLUMINESCENCE ELECTRON DRIFT Electron drift velocity ELECTRON MOBILITY Electrons Emission spectra Heterostructures Hot electrons LAYERS NANOSCIENCE AND NANOTECHNOLOGY Physics Physics and Astronomy QUANTUM WELLS RECOMBINATION SPECTRA TRANSISTORS Velocity
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