Experimental Simulation of a Diamond Betavoltaic Battery
Diamond single-crystal Schottky barrier mip -structures (metal–intrinsic diamond– p -doped diamond) with dimensions of 3 × 3 and 4.1 × 4.28 mm are fabricated on the basis of HTHP p -diamond and CVD i -diamond. The betavoltaic characteristics of the diamond structures are studied using a wide-apertur...
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| Veröffentlicht in: | Technical physics letters 2018-08, Vol.44 (8), p.697-699 |
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| creator | Amosov, V. N. Babichev, V. N. Dyatko, N. A. Meshchaninov, S. A. Pal’, A. F. Rodionov, N. B. Ryabinkin, A. N. Starostin, A. N. Filippov, A. V. |
| description | Diamond single-crystal Schottky barrier
mip
-structures (metal–intrinsic diamond–
p
-doped diamond) with dimensions of 3 × 3 and 4.1 × 4.28 mm are fabricated on the basis of HTHP
p
-diamond and CVD
i
-diamond. The betavoltaic characteristics of the diamond structures are studied using a wide-aperture electron beam with an initial energy of 110 keV, partially scattered on the way to a converter by a 14-μm-thick aluminum layer and a 17-mm-thick air layer. The maximum generated power reached 2.18 mW (41 mW/cm
2
) with a conversion efficiency of 2–3%. |
| doi_str_mv | 10.1134/S1063785018080023 |
| format | Article |
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mip
-structures (metal–intrinsic diamond–
p
-doped diamond) with dimensions of 3 × 3 and 4.1 × 4.28 mm are fabricated on the basis of HTHP
p
-diamond and CVD
i
-diamond. The betavoltaic characteristics of the diamond structures are studied using a wide-aperture electron beam with an initial energy of 110 keV, partially scattered on the way to a converter by a 14-μm-thick aluminum layer and a 17-mm-thick air layer. The maximum generated power reached 2.18 mW (41 mW/cm
2
) with a conversion efficiency of 2–3%.</description><identifier>ISSN: 1063-7850</identifier><identifier>EISSN: 1090-6533</identifier><identifier>DOI: 10.1134/S1063785018080023</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>ALUMINIUM ; Aluminum ; APERTURES ; Batteries ; CHEMICAL VAPOR DEPOSITION ; Classical and Continuum Physics ; COMPUTERIZED SIMULATION ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Converters ; Crystal structure ; DIAMONDS ; DOPED MATERIALS ; ELECTRIC BATTERIES ; ELECTRON BEAMS ; Energy conversion efficiency ; KEV RANGE 100-1000 ; LAYERS ; MONOCRYSTALS ; P-TYPE CONDUCTORS ; Physics ; Physics and Astronomy ; SCHOTTKY BARRIER DIODES ; Single crystals</subject><ispartof>Technical physics letters, 2018-08, Vol.44 (8), p.697-699</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-7d0443585507b9f665a26100b47a44ee7fff0b4efc7193d7e8055745793c7ff13</citedby><cites>FETCH-LOGICAL-c344t-7d0443585507b9f665a26100b47a44ee7fff0b4efc7193d7e8055745793c7ff13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063785018080023$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063785018080023$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22786317$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Amosov, V. N.</creatorcontrib><creatorcontrib>Babichev, V. N.</creatorcontrib><creatorcontrib>Dyatko, N. A.</creatorcontrib><creatorcontrib>Meshchaninov, S. A.</creatorcontrib><creatorcontrib>Pal’, A. F.</creatorcontrib><creatorcontrib>Rodionov, N. B.</creatorcontrib><creatorcontrib>Ryabinkin, A. N.</creatorcontrib><creatorcontrib>Starostin, A. N.</creatorcontrib><creatorcontrib>Filippov, A. V.</creatorcontrib><title>Experimental Simulation of a Diamond Betavoltaic Battery</title><title>Technical physics letters</title><addtitle>Tech. Phys. Lett</addtitle><description>Diamond single-crystal Schottky barrier
mip
-structures (metal–intrinsic diamond–
p
-doped diamond) with dimensions of 3 × 3 and 4.1 × 4.28 mm are fabricated on the basis of HTHP
p
-diamond and CVD
i
-diamond. The betavoltaic characteristics of the diamond structures are studied using a wide-aperture electron beam with an initial energy of 110 keV, partially scattered on the way to a converter by a 14-μm-thick aluminum layer and a 17-mm-thick air layer. The maximum generated power reached 2.18 mW (41 mW/cm
2
) with a conversion efficiency of 2–3%.</description><subject>ALUMINIUM</subject><subject>Aluminum</subject><subject>APERTURES</subject><subject>Batteries</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>Classical and Continuum Physics</subject><subject>COMPUTERIZED SIMULATION</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Converters</subject><subject>Crystal structure</subject><subject>DIAMONDS</subject><subject>DOPED MATERIALS</subject><subject>ELECTRIC BATTERIES</subject><subject>ELECTRON BEAMS</subject><subject>Energy conversion efficiency</subject><subject>KEV RANGE 100-1000</subject><subject>LAYERS</subject><subject>MONOCRYSTALS</subject><subject>P-TYPE CONDUCTORS</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>SCHOTTKY BARRIER DIODES</subject><subject>Single crystals</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1UMtKAzEUDaJgrX6AuwHXozeT99LW-oCCi-o6pGmiKdNJTVKxf-8MFVyIq3sv58G5B6FLDNcYE3qzwMCJkAywBAnQkCM0wqCg5oyQ42HnpB7wU3SW8xoAZMPUCMnZ19alsHFdMW21CJtda0qIXRV9Zaq7YDaxW1UTV8xnbIsJtpqYUlzan6MTb9rsLn7mGL3ez16mj_X8-eFpejuvLaG01GIFlBImGQOxVJ5zZhqOAZZUGEqdE977_nDeCqzISjgJjAnKhCK2xzAZo6uDb8wl6GxDcfbdxq5ztuimEZITLH5Z2xQ_di4XvY671PXBdANKKQFABi98YNkUc07O623_ukl7jUEPNeo_Nfaa5qDJPbd7c-nX-X_RN1PCcTI</recordid><startdate>20180801</startdate><enddate>20180801</enddate><creator>Amosov, V. N.</creator><creator>Babichev, V. N.</creator><creator>Dyatko, N. A.</creator><creator>Meshchaninov, S. A.</creator><creator>Pal’, A. F.</creator><creator>Rodionov, N. B.</creator><creator>Ryabinkin, A. N.</creator><creator>Starostin, A. N.</creator><creator>Filippov, A. V.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20180801</creationdate><title>Experimental Simulation of a Diamond Betavoltaic Battery</title><author>Amosov, V. N. ; Babichev, V. N. ; Dyatko, N. A. ; Meshchaninov, S. A. ; Pal’, A. F. ; Rodionov, N. B. ; Ryabinkin, A. N. ; Starostin, A. N. ; Filippov, A. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-7d0443585507b9f665a26100b47a44ee7fff0b4efc7193d7e8055745793c7ff13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>ALUMINIUM</topic><topic>Aluminum</topic><topic>APERTURES</topic><topic>Batteries</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>Classical and Continuum Physics</topic><topic>COMPUTERIZED SIMULATION</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Converters</topic><topic>Crystal structure</topic><topic>DIAMONDS</topic><topic>DOPED MATERIALS</topic><topic>ELECTRIC BATTERIES</topic><topic>ELECTRON BEAMS</topic><topic>Energy conversion efficiency</topic><topic>KEV RANGE 100-1000</topic><topic>LAYERS</topic><topic>MONOCRYSTALS</topic><topic>P-TYPE CONDUCTORS</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>SCHOTTKY BARRIER DIODES</topic><topic>Single crystals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Amosov, V. N.</creatorcontrib><creatorcontrib>Babichev, V. N.</creatorcontrib><creatorcontrib>Dyatko, N. A.</creatorcontrib><creatorcontrib>Meshchaninov, S. A.</creatorcontrib><creatorcontrib>Pal’, A. F.</creatorcontrib><creatorcontrib>Rodionov, N. B.</creatorcontrib><creatorcontrib>Ryabinkin, A. N.</creatorcontrib><creatorcontrib>Starostin, A. N.</creatorcontrib><creatorcontrib>Filippov, A. V.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Amosov, V. N.</au><au>Babichev, V. N.</au><au>Dyatko, N. A.</au><au>Meshchaninov, S. A.</au><au>Pal’, A. F.</au><au>Rodionov, N. B.</au><au>Ryabinkin, A. N.</au><au>Starostin, A. N.</au><au>Filippov, A. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental Simulation of a Diamond Betavoltaic Battery</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><date>2018-08-01</date><risdate>2018</risdate><volume>44</volume><issue>8</issue><spage>697</spage><epage>699</epage><pages>697-699</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>Diamond single-crystal Schottky barrier
mip
-structures (metal–intrinsic diamond–
p
-doped diamond) with dimensions of 3 × 3 and 4.1 × 4.28 mm are fabricated on the basis of HTHP
p
-diamond and CVD
i
-diamond. The betavoltaic characteristics of the diamond structures are studied using a wide-aperture electron beam with an initial energy of 110 keV, partially scattered on the way to a converter by a 14-μm-thick aluminum layer and a 17-mm-thick air layer. The maximum generated power reached 2.18 mW (41 mW/cm
2
) with a conversion efficiency of 2–3%.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063785018080023</doi><tpages>3</tpages></addata></record> |
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| ispartof | Technical physics letters, 2018-08, Vol.44 (8), p.697-699 |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | ALUMINIUM Aluminum APERTURES Batteries CHEMICAL VAPOR DEPOSITION Classical and Continuum Physics COMPUTERIZED SIMULATION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Converters Crystal structure DIAMONDS DOPED MATERIALS ELECTRIC BATTERIES ELECTRON BEAMS Energy conversion efficiency KEV RANGE 100-1000 LAYERS MONOCRYSTALS P-TYPE CONDUCTORS Physics Physics and Astronomy SCHOTTKY BARRIER DIODES Single crystals |
| title | Experimental Simulation of a Diamond Betavoltaic Battery |
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