Analysis of integrated thyristor switching-off by a reverse gate pulse current

To increase the maximum power current density of an integrated n + p'Nn'p + -type thyristor during switching-off by a current pulse in the control circuit, the injection of electrons from the n + emitter should be interrupted before the recovery of the collector p'N junction. This has...

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Veröffentlicht in:	Technical physics 2017-11, Vol.62 (11), p.1684-1688
Hauptverfasser:	Grekhov, I. V., Lyublinsky, A. G., Mikhailov, E. M., Poloskin, D. S., Skidanov, A. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Avalanches Circuits Classical and Continuum Physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CURRENT DENSITY ELECTRIC CONTACTS ELECTRODES Insulated gate bipolar transistors Physics Physics and Astronomy Semiconductor devices SEMICONDUCTOR JUNCTIONS Solid State Electronics Space charge Switching THYRISTORS TRANSISTORS
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