Atomic Force Microscopy Measurement of the Resistivity of Semiconductors
The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resis...
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| Veröffentlicht in: | Technical physics 2018-08, Vol.63 (8), p.1236-1241 |
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| container_title | Technical physics |
| container_volume | 63 |
| creator | Smirnov, V. A. Tominov, R. V. Alyab’eva, N. I. Il’ina, M. V. Polyakova, V. V. Bykov, Al. V. Ageev, O. A. |
| description | The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe–substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions. |
| doi_str_mv | 10.1134/S1063784218080182 |
| format | Article |
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A.</creatorcontrib><creatorcontrib>Tominov, R. V.</creatorcontrib><creatorcontrib>Alyab’eva, N. I.</creatorcontrib><creatorcontrib>Il’ina, M. V.</creatorcontrib><creatorcontrib>Polyakova, V. V.</creatorcontrib><creatorcontrib>Bykov, Al. V.</creatorcontrib><creatorcontrib>Ageev, O. A.</creatorcontrib><title>Atomic Force Microscopy Measurement of the Resistivity of Semiconductors</title><title>Technical physics</title><addtitle>Tech. Phys</addtitle><description>The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe–substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions.</description><subject>ATOMIC FORCE MICROSCOPY</subject><subject>Classical and Continuum Physics</subject><subject>COMPUTERIZED SIMULATION</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>Electric properties</subject><subject>Electrical resistivity</subject><subject>Experimental Instruments and Technique</subject><subject>Measurement</subject><subject>Microscopes</subject><subject>Microscopy</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>Semiconductors</subject><subject>Semiconductors (Materials)</subject><subject>SILICON</subject><subject>Silicon substrates</subject><subject>Spreading</subject><subject>SUBSTRATES</subject><subject>SURFACES</subject><issn>1063-7842</issn><issn>1090-6525</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kU1LxDAQhoso-PkDvBU8d83kq-lxWVwVFMGPc4jp1M3iNmuSCvvvTamwB5E5ZGbyPsObTFFcApkBMH79AkSyWnEKiigCih4UJ0AaUklBxeGYS1aN98fFaYxrQgCUkCfF3Tz5jbPl0geL5aOzwUfrt7vyEU0cAm6wT6XvyrTC8hmji8l9u7QbWy-YQd-3g00-xPPiqDOfES9-z7PibXnzurirHp5u7xfzh8oyxVKliG0tIHAqoca6A254LSRHzg0RuVBSMkY7-d6YlrbkvbFIlDCt5cIy1rGz4mqa67MVHa1LaFfZRo82aUprxWoBe9U2-K8BY9JrP4Q-G9OUqIZxBnRUzSbVh_lE7frOp2BsjnZ6GnYu9-dCUCppw5oMwASM3xQDdnob3MaEnQaixz3oP3vIDJ2YmLX9B4a9lf-hH3H5h-o</recordid><startdate>20180801</startdate><enddate>20180801</enddate><creator>Smirnov, V. A.</creator><creator>Tominov, R. V.</creator><creator>Alyab’eva, N. I.</creator><creator>Il’ina, M. V.</creator><creator>Polyakova, V. V.</creator><creator>Bykov, Al. V.</creator><creator>Ageev, O. A.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20180801</creationdate><title>Atomic Force Microscopy Measurement of the Resistivity of Semiconductors</title><author>Smirnov, V. A. ; Tominov, R. V. ; Alyab’eva, N. I. ; Il’ina, M. V. ; Polyakova, V. V. ; Bykov, Al. V. ; Ageev, O. 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A.</creatorcontrib><creatorcontrib>Tominov, R. V.</creatorcontrib><creatorcontrib>Alyab’eva, N. I.</creatorcontrib><creatorcontrib>Il’ina, M. V.</creatorcontrib><creatorcontrib>Polyakova, V. V.</creatorcontrib><creatorcontrib>Bykov, Al. V.</creatorcontrib><creatorcontrib>Ageev, O. A.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Technical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Smirnov, V. A.</au><au>Tominov, R. V.</au><au>Alyab’eva, N. I.</au><au>Il’ina, M. V.</au><au>Polyakova, V. V.</au><au>Bykov, Al. V.</au><au>Ageev, O. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic Force Microscopy Measurement of the Resistivity of Semiconductors</atitle><jtitle>Technical physics</jtitle><stitle>Tech. Phys</stitle><date>2018-08-01</date><risdate>2018</risdate><volume>63</volume><issue>8</issue><spage>1236</spage><epage>1241</epage><pages>1236-1241</pages><issn>1063-7842</issn><eissn>1090-6525</eissn><abstract>The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe–substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063784218080182</doi><tpages>6</tpages></addata></record> |
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| subjects | ATOMIC FORCE MICROSCOPY Classical and Continuum Physics COMPUTERIZED SIMULATION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRIC CONDUCTIVITY Electric properties Electrical resistivity Experimental Instruments and Technique Measurement Microscopes Microscopy Physics Physics and Astronomy SEMICONDUCTOR MATERIALS Semiconductors Semiconductors (Materials) SILICON Silicon substrates Spreading SUBSTRATES SURFACES |
| title | Atomic Force Microscopy Measurement of the Resistivity of Semiconductors |
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