Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range
The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the heterostructure with a GaAs/AlGaAs distributed Bragg reflector and an active region based on...
Gespeichert in:
| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2017-09, Vol.51 (9), p.1127-1132 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1132 |
|---|---|
| container_issue | 9 |
| container_start_page | 1127 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 51 |
| creator | Babichev, A. V. Kryzhanovskaya, N. V. Moiseev, E. I. Gladyshev, A. G. Karachinsky, L. Ya Novikov, I. I. Blokhin, S. A. Bobrov, M. A. Zadiranov, Yu. M. Troshkov, S. I. Egorov, A. Yu |
| description | The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the heterostructure with a GaAs/AlGaAs distributed Bragg reflector and an active region based on InAlGaAs/InGaAs quantum wells is grown by molecular-beam epitaxy on a GaAs (100) substrate. The top dielectric mirror with a SiO
2
/Ta
2
O
5
distributed Bragg reflector is formed by magnetron sputtering. The spectra of the room-temperature microphotoluminescence of these vertical-cavity surface-emitting laser heterostructures are studied under 532-nm excitation in the power range of 0–70 mW (with a focused-beam diameter of ~1 μm). The superlinear dependence of the photoluminescence intensity on the excitation power, narrowing of the photoluminescence peaks, and a change in the modal composition may be indications of lasing. The results obtained give evidence that the technology of the metamorphic growth of heterostructures on GaAs substrates can be used for the fabrication of vertical-cavity surface-emitting lasers working in the 1300- nm spectral range. |
| doi_str_mv | 10.1134/S1063782617090056 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22756388</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A514056355</galeid><sourcerecordid>A514056355</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-1e2ebbfdab6bb29511d3fabcd5775b387d30d58d034a7aa550d8221dd6b98df43</originalsourceid><addsrcrecordid>eNp1UU1LHTEUHYoFre0P6C7Q9dhkMslkliJaC4ILdR3ycfMm8uajSUZ4_8Ef7X2-goJIFrncnHNy7rlV9ZPRM8Z4-_uOUck71UjW0Z5SIb9UJwyrWrZdf7SvJa_378fVt5wfKWVMifaker5dSnRmS5Y0L5BKhEzmQEYoZpzTMkRHhp1N0ZMBCqQ5l9WVNSEqzIk87RnIrp15imVH8pqCcVDDGEuJ04ZsTYaEiihtXhtxImUAwjil9TSSvIArCb9PZtrA9-prMNsMP_7fp9XD1eX9xXV9c_vn78X5Te244qVm0IC1wRsrrW16wZjnwVjnRdcJy1XnOfVCecpb0xkjBPWqaZj30vbKh5afVr8OujhO1NnFAm5w8zShGd00nZBcqTcURvNvhVz047ymCY1p1vNW9LyXHFFnB9TGbEHHKcw4j8PjMQTUhBCxfy5Yi0vhQiCBHQgO08wJgl5SHE3aaUb1fpf6wy6R0xw4GbEYVHpn5VPSC8Cwoto</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1934593963</pqid></control><display><type>article</type><title>Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range</title><source>Springer Nature - Complete Springer Journals</source><creator>Babichev, A. V. ; Kryzhanovskaya, N. V. ; Moiseev, E. I. ; Gladyshev, A. G. ; Karachinsky, L. Ya ; Novikov, I. I. ; Blokhin, S. A. ; Bobrov, M. A. ; Zadiranov, Yu. M. ; Troshkov, S. I. ; Egorov, A. Yu</creator><creatorcontrib>Babichev, A. V. ; Kryzhanovskaya, N. V. ; Moiseev, E. I. ; Gladyshev, A. G. ; Karachinsky, L. Ya ; Novikov, I. I. ; Blokhin, S. A. ; Bobrov, M. A. ; Zadiranov, Yu. M. ; Troshkov, S. I. ; Egorov, A. Yu</creatorcontrib><description>The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the heterostructure with a GaAs/AlGaAs distributed Bragg reflector and an active region based on InAlGaAs/InGaAs quantum wells is grown by molecular-beam epitaxy on a GaAs (100) substrate. The top dielectric mirror with a SiO
2
/Ta
2
O
5
distributed Bragg reflector is formed by magnetron sputtering. The spectra of the room-temperature microphotoluminescence of these vertical-cavity surface-emitting laser heterostructures are studied under 532-nm excitation in the power range of 0–70 mW (with a focused-beam diameter of ~1 μm). The superlinear dependence of the photoluminescence intensity on the excitation power, narrowing of the photoluminescence peaks, and a change in the modal composition may be indications of lasing. The results obtained give evidence that the technology of the metamorphic growth of heterostructures on GaAs substrates can be used for the fabrication of vertical-cavity surface-emitting lasers working in the 1300- nm spectral range.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782617090056</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aluminum gallium arsenides ; Analysis ; CRYSTAL GROWTH ; DIELECTRIC MATERIALS ; Electronic Properties of Semiconductors ; Epitaxial growth ; Epitaxy ; Excitation ; Gallium arsenide ; GALLIUM ARSENIDES ; Heterostructures ; INDIUM ARSENIDES ; LABELLING ; LANTHANUM SELENIDES ; LASERS ; Lasing ; Magnetic Materials ; Magnetism ; Magnetron sputtering ; MASS SPECTROSCOPY ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; MOLECULAR BEAMS ; NUCLEAR MAGNETIC RESONANCE ; OPTICAL PROPERTIES ; PHOTOLUMINESCENCE ; Physics ; Physics and Astronomy ; QUANTUM WELLS ; SEMICONDUCTOR MATERIALS ; SILICA ; Silicon dioxide ; SPECTRA ; Spectral emittance ; Substrates ; TANTALUM OXIDES ; TEMPERATURE RANGE 0273-0400 K ; Vertical cavity surface emission lasers</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1127-1132</ispartof><rights>Pleiades Publishing, Ltd. 2017</rights><rights>COPYRIGHT 2017 Springer</rights><rights>Copyright Springer Science & Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-1e2ebbfdab6bb29511d3fabcd5775b387d30d58d034a7aa550d8221dd6b98df43</citedby><cites>FETCH-LOGICAL-c383t-1e2ebbfdab6bb29511d3fabcd5775b387d30d58d034a7aa550d8221dd6b98df43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782617090056$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782617090056$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22756388$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Babichev, A. V.</creatorcontrib><creatorcontrib>Kryzhanovskaya, N. V.</creatorcontrib><creatorcontrib>Moiseev, E. I.</creatorcontrib><creatorcontrib>Gladyshev, A. G.</creatorcontrib><creatorcontrib>Karachinsky, L. Ya</creatorcontrib><creatorcontrib>Novikov, I. I.</creatorcontrib><creatorcontrib>Blokhin, S. A.</creatorcontrib><creatorcontrib>Bobrov, M. A.</creatorcontrib><creatorcontrib>Zadiranov, Yu. M.</creatorcontrib><creatorcontrib>Troshkov, S. I.</creatorcontrib><creatorcontrib>Egorov, A. Yu</creatorcontrib><title>Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the heterostructure with a GaAs/AlGaAs distributed Bragg reflector and an active region based on InAlGaAs/InGaAs quantum wells is grown by molecular-beam epitaxy on a GaAs (100) substrate. The top dielectric mirror with a SiO
2
/Ta
2
O
5
distributed Bragg reflector is formed by magnetron sputtering. The spectra of the room-temperature microphotoluminescence of these vertical-cavity surface-emitting laser heterostructures are studied under 532-nm excitation in the power range of 0–70 mW (with a focused-beam diameter of ~1 μm). The superlinear dependence of the photoluminescence intensity on the excitation power, narrowing of the photoluminescence peaks, and a change in the modal composition may be indications of lasing. The results obtained give evidence that the technology of the metamorphic growth of heterostructures on GaAs substrates can be used for the fabrication of vertical-cavity surface-emitting lasers working in the 1300- nm spectral range.</description><subject>Aluminum gallium arsenides</subject><subject>Analysis</subject><subject>CRYSTAL GROWTH</subject><subject>DIELECTRIC MATERIALS</subject><subject>Electronic Properties of Semiconductors</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Excitation</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>Heterostructures</subject><subject>INDIUM ARSENIDES</subject><subject>LABELLING</subject><subject>LANTHANUM SELENIDES</subject><subject>LASERS</subject><subject>Lasing</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Magnetron sputtering</subject><subject>MASS SPECTROSCOPY</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>MOLECULAR BEAMS</subject><subject>NUCLEAR MAGNETIC RESONANCE</subject><subject>OPTICAL PROPERTIES</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>QUANTUM WELLS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICA</subject><subject>Silicon dioxide</subject><subject>SPECTRA</subject><subject>Spectral emittance</subject><subject>Substrates</subject><subject>TANTALUM OXIDES</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>Vertical cavity surface emission lasers</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1UU1LHTEUHYoFre0P6C7Q9dhkMslkliJaC4ILdR3ycfMm8uajSUZ4_8Ef7X2-goJIFrncnHNy7rlV9ZPRM8Z4-_uOUck71UjW0Z5SIb9UJwyrWrZdf7SvJa_378fVt5wfKWVMifaker5dSnRmS5Y0L5BKhEzmQEYoZpzTMkRHhp1N0ZMBCqQ5l9WVNSEqzIk87RnIrp15imVH8pqCcVDDGEuJ04ZsTYaEiihtXhtxImUAwjil9TSSvIArCb9PZtrA9-prMNsMP_7fp9XD1eX9xXV9c_vn78X5Te244qVm0IC1wRsrrW16wZjnwVjnRdcJy1XnOfVCecpb0xkjBPWqaZj30vbKh5afVr8OujhO1NnFAm5w8zShGd00nZBcqTcURvNvhVz047ymCY1p1vNW9LyXHFFnB9TGbEHHKcw4j8PjMQTUhBCxfy5Yi0vhQiCBHQgO08wJgl5SHE3aaUb1fpf6wy6R0xw4GbEYVHpn5VPSC8Cwoto</recordid><startdate>20170901</startdate><enddate>20170901</enddate><creator>Babichev, A. V.</creator><creator>Kryzhanovskaya, N. V.</creator><creator>Moiseev, E. I.</creator><creator>Gladyshev, A. G.</creator><creator>Karachinsky, L. Ya</creator><creator>Novikov, I. I.</creator><creator>Blokhin, S. A.</creator><creator>Bobrov, M. A.</creator><creator>Zadiranov, Yu. M.</creator><creator>Troshkov, S. I.</creator><creator>Egorov, A. Yu</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20170901</creationdate><title>Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range</title><author>Babichev, A. V. ; Kryzhanovskaya, N. V. ; Moiseev, E. I. ; Gladyshev, A. G. ; Karachinsky, L. Ya ; Novikov, I. I. ; Blokhin, S. A. ; Bobrov, M. A. ; Zadiranov, Yu. M. ; Troshkov, S. I. ; Egorov, A. Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-1e2ebbfdab6bb29511d3fabcd5775b387d30d58d034a7aa550d8221dd6b98df43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum gallium arsenides</topic><topic>Analysis</topic><topic>CRYSTAL GROWTH</topic><topic>DIELECTRIC MATERIALS</topic><topic>Electronic Properties of Semiconductors</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>Excitation</topic><topic>Gallium arsenide</topic><topic>GALLIUM ARSENIDES</topic><topic>Heterostructures</topic><topic>INDIUM ARSENIDES</topic><topic>LABELLING</topic><topic>LANTHANUM SELENIDES</topic><topic>LASERS</topic><topic>Lasing</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Magnetron sputtering</topic><topic>MASS SPECTROSCOPY</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>MOLECULAR BEAMS</topic><topic>NUCLEAR MAGNETIC RESONANCE</topic><topic>OPTICAL PROPERTIES</topic><topic>PHOTOLUMINESCENCE</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>QUANTUM WELLS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICA</topic><topic>Silicon dioxide</topic><topic>SPECTRA</topic><topic>Spectral emittance</topic><topic>Substrates</topic><topic>TANTALUM OXIDES</topic><topic>TEMPERATURE RANGE 0273-0400 K</topic><topic>Vertical cavity surface emission lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Babichev, A. V.</creatorcontrib><creatorcontrib>Kryzhanovskaya, N. V.</creatorcontrib><creatorcontrib>Moiseev, E. I.</creatorcontrib><creatorcontrib>Gladyshev, A. G.</creatorcontrib><creatorcontrib>Karachinsky, L. Ya</creatorcontrib><creatorcontrib>Novikov, I. I.</creatorcontrib><creatorcontrib>Blokhin, S. A.</creatorcontrib><creatorcontrib>Bobrov, M. A.</creatorcontrib><creatorcontrib>Zadiranov, Yu. M.</creatorcontrib><creatorcontrib>Troshkov, S. I.</creatorcontrib><creatorcontrib>Egorov, A. Yu</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Babichev, A. V.</au><au>Kryzhanovskaya, N. V.</au><au>Moiseev, E. I.</au><au>Gladyshev, A. G.</au><au>Karachinsky, L. Ya</au><au>Novikov, I. I.</au><au>Blokhin, S. A.</au><au>Bobrov, M. A.</au><au>Zadiranov, Yu. M.</au><au>Troshkov, S. I.</au><au>Egorov, A. Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2017-09-01</date><risdate>2017</risdate><volume>51</volume><issue>9</issue><spage>1127</spage><epage>1132</epage><pages>1127-1132</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the heterostructure with a GaAs/AlGaAs distributed Bragg reflector and an active region based on InAlGaAs/InGaAs quantum wells is grown by molecular-beam epitaxy on a GaAs (100) substrate. The top dielectric mirror with a SiO
2
/Ta
2
O
5
distributed Bragg reflector is formed by magnetron sputtering. The spectra of the room-temperature microphotoluminescence of these vertical-cavity surface-emitting laser heterostructures are studied under 532-nm excitation in the power range of 0–70 mW (with a focused-beam diameter of ~1 μm). The superlinear dependence of the photoluminescence intensity on the excitation power, narrowing of the photoluminescence peaks, and a change in the modal composition may be indications of lasing. The results obtained give evidence that the technology of the metamorphic growth of heterostructures on GaAs substrates can be used for the fabrication of vertical-cavity surface-emitting lasers working in the 1300- nm spectral range.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782617090056</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1127-1132 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22756388 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Aluminum gallium arsenides Analysis CRYSTAL GROWTH DIELECTRIC MATERIALS Electronic Properties of Semiconductors Epitaxial growth Epitaxy Excitation Gallium arsenide GALLIUM ARSENIDES Heterostructures INDIUM ARSENIDES LABELLING LANTHANUM SELENIDES LASERS Lasing Magnetic Materials Magnetism Magnetron sputtering MASS SPECTROSCOPY MATERIALS SCIENCE MOLECULAR BEAM EPITAXY MOLECULAR BEAMS NUCLEAR MAGNETIC RESONANCE OPTICAL PROPERTIES PHOTOLUMINESCENCE Physics Physics and Astronomy QUANTUM WELLS SEMICONDUCTOR MATERIALS SILICA Silicon dioxide SPECTRA Spectral emittance Substrates TANTALUM OXIDES TEMPERATURE RANGE 0273-0400 K Vertical cavity surface emission lasers |
| title | Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T20%3A36%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optical%20properties%20of%20metamorphic%20hybrid%20heterostuctures%20for%20vertical-cavity%20surface-emitting%20lasers%20operating%20in%20the%201300-nm%20spectral%20range&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Babichev,%20A.%20V.&rft.date=2017-09-01&rft.volume=51&rft.issue=9&rft.spage=1127&rft.epage=1132&rft.pages=1127-1132&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782617090056&rft_dat=%3Cgale_osti_%3EA514056355%3C/gale_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1934593963&rft_id=info:pmid/&rft_galeid=A514056355&rfr_iscdi=true |