Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer qualit...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2017-11, Vol.51 (11), p.1431-1434
Hauptverfasser:	Maleev, N. A., Belyakov, V. A., Vasil’ev, A. P., Bobrov, M. A., Blokhin, S. A., Kulagina, M. M., Kuzmenkov, A. G., Nevedomskii, V. N., Guseva, Yu. A., Maleev, S. N., Ladenkov, I. V., Fefelova, E. L., Fefelov, A. G., Ustinov, V. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	2017 ALUMINIUM ARSENIDES Barriers CRYSTAL GROWTH CURRENT DENSITY Epitaxy GALLIUM ARSENIDES Indium aluminum arsenides INDIUM ARSENIDES INDIUM PHOSPHIDES Inserts LATTICE PARAMETERS LEAKAGE CURRENT Magnetic Materials Magnetism March 13–16 MATERIALS SCIENCE MOLECULAR BEAM EPITAXY Nizhny Novgorod Physics Physics and Astronomy THICKNESS Thin films Varactor diodes VARIABLE CAPACITANCE DIODES XXI International Symposium “Nanophysics and Nanoelectronics”
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