The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4 H -SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV for...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2017-12, Vol.51 (12), p.1666-1670
Hauptverfasser:	Ganiyev, Sabuhi, Azim Khairi, M., Ahmad Fauzi, D., Abdullah, Yusof, Hasbullah, N. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Bias Current voltage characteristics Diodes Electrical measurement Electron irradiation Electrons Fabrication IRRADIATION Magnetic Materials Magnetism MATERIALS SCIENCE MEV RANGE Physics Physics and Astronomy Radiation (Physics) Radiation dosage RADIATION DOSES Saturation SCHOTTKY BARRIER DIODES Schottky diodes Silicon carbides Temperature TEMPERATURE DEPENDENCE Testing of Materials and Structures Treatment
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