Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots
The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground state to the lowest excited size-quantization state, are reported. An analytical theory of...
Gespeichert in:
| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-01, Vol.52 (1), p.59-63 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 63 |
|---|---|
| container_issue | 1 |
| container_start_page | 59 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 52 |
| creator | Sofronov, A. N. Balagula, R. M. Firsov, D. A. Vorobjev, L. E. Tonkikh, A. A. Sarkisyan, H. A. Hayrapetyan, D. B. Petrosyan, L. S. Kazaryan, E. M. |
| description | The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground state to the lowest excited size-quantization state, are reported. An analytical theory of the size quantization of holes in a lens-shaped quantum dot is developed in the context of the adiabatic approximation with consideration for pair Coulomb interaction. It is shown that the interaction has no effect on the frequencies of lower interlevel resonances. This fact is representative of generalized Kohn’s theorem satisfied due to the specific geometric shape of the quantum dot. The experimental and theoretical values of the transition energies are in good agreement. |
| doi_str_mv | 10.1134/S1063782618010220 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22756185</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A529490816</galeid><sourcerecordid>A529490816</sourcerecordid><originalsourceid>FETCH-LOGICAL-c431t-b4035abc3516c17eb3e9c02990706e3c2d2b4b2ea11ab5c26ca9ffd01e8fde143</originalsourceid><addsrcrecordid>eNp1kEtLBDEMxwdRcH18AG8DnkeTdl71tqyvBUF8nUunk2plt13b7sFvb9cVPIjkkJD8fyH5F8UJwhkir8-fEFre9azFHhAYg51igiCgautO7G7qlleb-X5xEOM7AGLf1JPiYjpEH1bJeld6U16rUM2dCSrQWD6q0arviXXlDZ0_2fJhrVxaL8tLn-JRsWfUItLxTz4sXq6vnme31d39zXw2vat0zTFVQw28UYPmDbYaOxo4CQ1MCOigJa7ZyIZ6YKQQ1dBo1moljBkBqTcjYc0Pi9PtXh-TlVHbRPpNe-dIJ8lY1-Sfm1_VKviPNcUk3_06uHyYZJAN4Z3oWFadbVWvakHSOuNTUDrHSEubd5KxuT9tmKgF9NhmALeADj7GQEaugl2q8CkR5MZ5-cf5zLAtE7PWvVL4PeV_6AuFdYIE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2002237972</pqid></control><display><type>article</type><title>Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots</title><source>SpringerLink Journals - AutoHoldings</source><creator>Sofronov, A. N. ; Balagula, R. M. ; Firsov, D. A. ; Vorobjev, L. E. ; Tonkikh, A. A. ; Sarkisyan, H. A. ; Hayrapetyan, D. B. ; Petrosyan, L. S. ; Kazaryan, E. M.</creator><creatorcontrib>Sofronov, A. N. ; Balagula, R. M. ; Firsov, D. A. ; Vorobjev, L. E. ; Tonkikh, A. A. ; Sarkisyan, H. A. ; Hayrapetyan, D. B. ; Petrosyan, L. S. ; Kazaryan, E. M.</creatorcontrib><description>The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground state to the lowest excited size-quantization state, are reported. An analytical theory of the size quantization of holes in a lens-shaped quantum dot is developed in the context of the adiabatic approximation with consideration for pair Coulomb interaction. It is shown that the interaction has no effect on the frequencies of lower interlevel resonances. This fact is representative of generalized Kohn’s theorem satisfied due to the specific geometric shape of the quantum dot. The experimental and theoretical values of the transition energies are in good agreement.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782618010220</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>ABSORPTION ; ADIABATIC APPROXIMATION ; Adiabatic flow ; DOPED MATERIALS ; FAR INFRARED RADIATION ; GERMANIUM ; GROUND STATES ; Low-Dimensional Systems ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; Measurement ; NUCLEAR MAGNETIC RESONANCE ; PAIRING INTERACTIONS ; Physics ; Physics and Astronomy ; QUANTUM DOTS ; Quantum Phenomena ; Radiation (Physics) ; Semiconductor Structures ; Silicon</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.59-63</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>COPYRIGHT 2018 Springer</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c431t-b4035abc3516c17eb3e9c02990706e3c2d2b4b2ea11ab5c26ca9ffd01e8fde143</citedby><cites>FETCH-LOGICAL-c431t-b4035abc3516c17eb3e9c02990706e3c2d2b4b2ea11ab5c26ca9ffd01e8fde143</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782618010220$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782618010220$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22756185$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sofronov, A. N.</creatorcontrib><creatorcontrib>Balagula, R. M.</creatorcontrib><creatorcontrib>Firsov, D. A.</creatorcontrib><creatorcontrib>Vorobjev, L. E.</creatorcontrib><creatorcontrib>Tonkikh, A. A.</creatorcontrib><creatorcontrib>Sarkisyan, H. A.</creatorcontrib><creatorcontrib>Hayrapetyan, D. B.</creatorcontrib><creatorcontrib>Petrosyan, L. S.</creatorcontrib><creatorcontrib>Kazaryan, E. M.</creatorcontrib><title>Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground state to the lowest excited size-quantization state, are reported. An analytical theory of the size quantization of holes in a lens-shaped quantum dot is developed in the context of the adiabatic approximation with consideration for pair Coulomb interaction. It is shown that the interaction has no effect on the frequencies of lower interlevel resonances. This fact is representative of generalized Kohn’s theorem satisfied due to the specific geometric shape of the quantum dot. The experimental and theoretical values of the transition energies are in good agreement.</description><subject>ABSORPTION</subject><subject>ADIABATIC APPROXIMATION</subject><subject>Adiabatic flow</subject><subject>DOPED MATERIALS</subject><subject>FAR INFRARED RADIATION</subject><subject>GERMANIUM</subject><subject>GROUND STATES</subject><subject>Low-Dimensional Systems</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>Measurement</subject><subject>NUCLEAR MAGNETIC RESONANCE</subject><subject>PAIRING INTERACTIONS</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>QUANTUM DOTS</subject><subject>Quantum Phenomena</subject><subject>Radiation (Physics)</subject><subject>Semiconductor Structures</subject><subject>Silicon</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLBDEMxwdRcH18AG8DnkeTdl71tqyvBUF8nUunk2plt13b7sFvb9cVPIjkkJD8fyH5F8UJwhkir8-fEFre9azFHhAYg51igiCgautO7G7qlleb-X5xEOM7AGLf1JPiYjpEH1bJeld6U16rUM2dCSrQWD6q0arviXXlDZ0_2fJhrVxaL8tLn-JRsWfUItLxTz4sXq6vnme31d39zXw2vat0zTFVQw28UYPmDbYaOxo4CQ1MCOigJa7ZyIZ6YKQQ1dBo1moljBkBqTcjYc0Pi9PtXh-TlVHbRPpNe-dIJ8lY1-Sfm1_VKviPNcUk3_06uHyYZJAN4Z3oWFadbVWvakHSOuNTUDrHSEubd5KxuT9tmKgF9NhmALeADj7GQEaugl2q8CkR5MZ5-cf5zLAtE7PWvVL4PeV_6AuFdYIE</recordid><startdate>20180101</startdate><enddate>20180101</enddate><creator>Sofronov, A. N.</creator><creator>Balagula, R. M.</creator><creator>Firsov, D. A.</creator><creator>Vorobjev, L. E.</creator><creator>Tonkikh, A. A.</creator><creator>Sarkisyan, H. A.</creator><creator>Hayrapetyan, D. B.</creator><creator>Petrosyan, L. S.</creator><creator>Kazaryan, E. M.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20180101</creationdate><title>Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots</title><author>Sofronov, A. N. ; Balagula, R. M. ; Firsov, D. A. ; Vorobjev, L. E. ; Tonkikh, A. A. ; Sarkisyan, H. A. ; Hayrapetyan, D. B. ; Petrosyan, L. S. ; Kazaryan, E. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c431t-b4035abc3516c17eb3e9c02990706e3c2d2b4b2ea11ab5c26ca9ffd01e8fde143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>ABSORPTION</topic><topic>ADIABATIC APPROXIMATION</topic><topic>Adiabatic flow</topic><topic>DOPED MATERIALS</topic><topic>FAR INFRARED RADIATION</topic><topic>GERMANIUM</topic><topic>GROUND STATES</topic><topic>Low-Dimensional Systems</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>Measurement</topic><topic>NUCLEAR MAGNETIC RESONANCE</topic><topic>PAIRING INTERACTIONS</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>QUANTUM DOTS</topic><topic>Quantum Phenomena</topic><topic>Radiation (Physics)</topic><topic>Semiconductor Structures</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sofronov, A. N.</creatorcontrib><creatorcontrib>Balagula, R. M.</creatorcontrib><creatorcontrib>Firsov, D. A.</creatorcontrib><creatorcontrib>Vorobjev, L. E.</creatorcontrib><creatorcontrib>Tonkikh, A. A.</creatorcontrib><creatorcontrib>Sarkisyan, H. A.</creatorcontrib><creatorcontrib>Hayrapetyan, D. B.</creatorcontrib><creatorcontrib>Petrosyan, L. S.</creatorcontrib><creatorcontrib>Kazaryan, E. M.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sofronov, A. N.</au><au>Balagula, R. M.</au><au>Firsov, D. A.</au><au>Vorobjev, L. E.</au><au>Tonkikh, A. A.</au><au>Sarkisyan, H. A.</au><au>Hayrapetyan, D. B.</au><au>Petrosyan, L. S.</au><au>Kazaryan, E. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2018-01-01</date><risdate>2018</risdate><volume>52</volume><issue>1</issue><spage>59</spage><epage>63</epage><pages>59-63</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground state to the lowest excited size-quantization state, are reported. An analytical theory of the size quantization of holes in a lens-shaped quantum dot is developed in the context of the adiabatic approximation with consideration for pair Coulomb interaction. It is shown that the interaction has no effect on the frequencies of lower interlevel resonances. This fact is representative of generalized Kohn’s theorem satisfied due to the specific geometric shape of the quantum dot. The experimental and theoretical values of the transition energies are in good agreement.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782618010220</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.59-63 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22756185 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | ABSORPTION ADIABATIC APPROXIMATION Adiabatic flow DOPED MATERIALS FAR INFRARED RADIATION GERMANIUM GROUND STATES Low-Dimensional Systems Magnetic Materials Magnetism MATERIALS SCIENCE Measurement NUCLEAR MAGNETIC RESONANCE PAIRING INTERACTIONS Physics Physics and Astronomy QUANTUM DOTS Quantum Phenomena Radiation (Physics) Semiconductor Structures Silicon |
| title | Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T17%3A31%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Absorption%20of%20Far-Infrared%20Radiation%20in%20Ge/Si%20Quantum%20Dots&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Sofronov,%20A.%20N.&rft.date=2018-01-01&rft.volume=52&rft.issue=1&rft.spage=59&rft.epage=63&rft.pages=59-63&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782618010220&rft_dat=%3Cgale_osti_%3EA529490816%3C/gale_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2002237972&rft_id=info:pmid/&rft_galeid=A529490816&rfr_iscdi=true |