High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches

The negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite b...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-04, Vol.52 (4), p.478-484
Hauptverfasser:	Bagraev, N. T., Klyachkin, L. E., Khromov, V. S., Malyarenko, A. M., Mashkov, V. A., Matveev, T. V., Romanov, V. V., Rul’, N. I., Taranets, K. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	2017. Transport In Heterostructures Bosons Carrier density Channels Confining Cooling effects De Haas-Van Alphen effect ELECTRON-ELECTRON COLLISIONS ELECTRON-ELECTRON COUPLING ELECTRON-ELECTRON INTERACTIONS Fermions High temperature June 26–30 Magnetic fields MAGNETIC FLUX Magnetic Materials Magnetism MATERIALS SCIENCE Physics Physics and Astronomy QUANTUM WELLS Resistance Saint Petersburg Sandwich structures SEMICONDUCTOR MATERIALS SILICON TEMPERATURE RANGE 0400-1000 K XXV International Symposium “Nanostructures: Physics and Technology”
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