High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches
The negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite b...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-04, Vol.52 (4), p.478-484 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Bagraev, N. T. Klyachkin, L. E. Khromov, V. S. Malyarenko, A. M. Mashkov, V. A. Matveev, T. V. Romanov, V. V. Rul’, N. I. Taranets, K. B. |
| description | The negative-
U
impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure. |
| doi_str_mv | 10.1134/S1063782618040061 |
| format | Article |
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U
impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782618040061</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>2017. Transport In Heterostructures ; Bosons ; Carrier density ; Channels ; Confining ; Cooling effects ; De Haas-Van Alphen effect ; ELECTRON-ELECTRON COLLISIONS ; ELECTRON-ELECTRON COUPLING ; ELECTRON-ELECTRON INTERACTIONS ; Fermions ; High temperature ; June 26–30 ; Magnetic fields ; MAGNETIC FLUX ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; Physics ; Physics and Astronomy ; QUANTUM WELLS ; Resistance ; Saint Petersburg ; Sandwich structures ; SEMICONDUCTOR MATERIALS ; SILICON ; TEMPERATURE RANGE 0400-1000 K ; XXV International Symposium “Nanostructures: Physics and Technology”</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2018-04, Vol.52 (4), p.478-484</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>COPYRIGHT 2018 Springer</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-9e8b750592c430f6d096eaec8f541cfcbf66e673bc2838a69e2b43bf41c38d373</citedby><cites>FETCH-LOGICAL-c383t-9e8b750592c430f6d096eaec8f541cfcbf66e673bc2838a69e2b43bf41c38d373</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782618040061$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782618040061$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22750000$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Bagraev, N. T.</creatorcontrib><creatorcontrib>Klyachkin, L. E.</creatorcontrib><creatorcontrib>Khromov, V. S.</creatorcontrib><creatorcontrib>Malyarenko, A. M.</creatorcontrib><creatorcontrib>Mashkov, V. A.</creatorcontrib><creatorcontrib>Matveev, T. V.</creatorcontrib><creatorcontrib>Romanov, V. V.</creatorcontrib><creatorcontrib>Rul’, N. I.</creatorcontrib><creatorcontrib>Taranets, K. B.</creatorcontrib><title>High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The negative-
U
impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure.</description><subject>2017. Transport In Heterostructures</subject><subject>Bosons</subject><subject>Carrier density</subject><subject>Channels</subject><subject>Confining</subject><subject>Cooling effects</subject><subject>De Haas-Van Alphen effect</subject><subject>ELECTRON-ELECTRON COLLISIONS</subject><subject>ELECTRON-ELECTRON COUPLING</subject><subject>ELECTRON-ELECTRON INTERACTIONS</subject><subject>Fermions</subject><subject>High temperature</subject><subject>June 26–30</subject><subject>Magnetic fields</subject><subject>MAGNETIC FLUX</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>QUANTUM WELLS</subject><subject>Resistance</subject><subject>Saint Petersburg</subject><subject>Sandwich structures</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><subject>TEMPERATURE RANGE 0400-1000 K</subject><subject>XXV International Symposium “Nanostructures: Physics and Technology”</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kc1KAzEURgdRsFYfwN2A66n5m0xmWUu1YlGkdR0y6U2b0mZqkkF8ezNU6EJMFgm537mccLPsFqMRxpTdLzDitBKEY4EYQhyfZQOMalRwVtXn_Z3Toq9fZlchbBHCWJRskD3M7HqTL2F_AK9i5yF_75SL3T5_sQ6i1fnUGNAx5NblC7uzunX5q3JtUG71ZfUGwnV2YdQuwM3vOcw-HqfLyayYvz09T8bzQlNBY1GDaKoSlTXRjCLDV6jmoEALUzKsjW4M58Ar2mgiqFC8BtIw2phUpGJFKzrM7o592xCtDNpG0Juk45KeJCT1TuuUOvj2s4MQ5bbtvEtikiBCGa0Yoyk1OqbWagfSOtNGr3TaK9j3XwRj0_u4ZIQkWYETgI-A9m0IHow8eLtX_ltiJPsJyD8TSAw5MiFl3Rr8SeV_6AeEvoWR</recordid><startdate>20180401</startdate><enddate>20180401</enddate><creator>Bagraev, N. T.</creator><creator>Klyachkin, L. E.</creator><creator>Khromov, V. S.</creator><creator>Malyarenko, A. M.</creator><creator>Mashkov, V. A.</creator><creator>Matveev, T. V.</creator><creator>Romanov, V. V.</creator><creator>Rul’, N. I.</creator><creator>Taranets, K. B.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20180401</creationdate><title>High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches</title><author>Bagraev, N. T. ; Klyachkin, L. E. ; Khromov, V. S. ; Malyarenko, A. M. ; Mashkov, V. A. ; Matveev, T. V. ; Romanov, V. V. ; Rul’, N. I. ; Taranets, K. 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Transport In Heterostructures</topic><topic>Bosons</topic><topic>Carrier density</topic><topic>Channels</topic><topic>Confining</topic><topic>Cooling effects</topic><topic>De Haas-Van Alphen effect</topic><topic>ELECTRON-ELECTRON COLLISIONS</topic><topic>ELECTRON-ELECTRON COUPLING</topic><topic>ELECTRON-ELECTRON INTERACTIONS</topic><topic>Fermions</topic><topic>High temperature</topic><topic>June 26–30</topic><topic>Magnetic fields</topic><topic>MAGNETIC FLUX</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>QUANTUM WELLS</topic><topic>Resistance</topic><topic>Saint Petersburg</topic><topic>Sandwich structures</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON</topic><topic>TEMPERATURE RANGE 0400-1000 K</topic><topic>XXV International Symposium “Nanostructures: Physics and Technology”</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bagraev, N. T.</creatorcontrib><creatorcontrib>Klyachkin, L. E.</creatorcontrib><creatorcontrib>Khromov, V. S.</creatorcontrib><creatorcontrib>Malyarenko, A. M.</creatorcontrib><creatorcontrib>Mashkov, V. A.</creatorcontrib><creatorcontrib>Matveev, T. V.</creatorcontrib><creatorcontrib>Romanov, V. V.</creatorcontrib><creatorcontrib>Rul’, N. I.</creatorcontrib><creatorcontrib>Taranets, K. B.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bagraev, N. T.</au><au>Klyachkin, L. E.</au><au>Khromov, V. S.</au><au>Malyarenko, A. M.</au><au>Mashkov, V. A.</au><au>Matveev, T. V.</au><au>Romanov, V. V.</au><au>Rul’, N. I.</au><au>Taranets, K. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2018-04-01</date><risdate>2018</risdate><volume>52</volume><issue>4</issue><spage>478</spage><epage>484</epage><pages>478-484</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The negative-
U
impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782618040061</doi><tpages>7</tpages></addata></record> |
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| subjects | 2017. Transport In Heterostructures Bosons Carrier density Channels Confining Cooling effects De Haas-Van Alphen effect ELECTRON-ELECTRON COLLISIONS ELECTRON-ELECTRON COUPLING ELECTRON-ELECTRON INTERACTIONS Fermions High temperature June 26–30 Magnetic fields MAGNETIC FLUX Magnetic Materials Magnetism MATERIALS SCIENCE Physics Physics and Astronomy QUANTUM WELLS Resistance Saint Petersburg Sandwich structures SEMICONDUCTOR MATERIALS SILICON TEMPERATURE RANGE 0400-1000 K XXV International Symposium “Nanostructures: Physics and Technology” |
| title | High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches |
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