Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy
The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-plasma-assisted molecular-beam epitaxy are presented....
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (12), p.1529-1533 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Mizerov, A. M. Timoshnev, S. N. Sobolev, M. S. Nikitina, E. V. Shubina, K. Yu Berezovskaia, T. N. Shtrom, I. V. Bouravleuv, A. D. |
| description | The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-plasma-assisted molecular-beam epitaxy are presented. It is experimentally established that the optimal initial condition for GaN epitaxy on Si(111) substrates is high-temperature nitridation of the Si(111) substrate carried out immediately before GaN growth. It is shown that it is possible to control the polarity of GaN by means of appropriate choice of the growth under conditions with N or Ga enrichment at the initial stage of GaN/Si(111) epitaxy. |
| doi_str_mv | 10.1134/S1063782618120175 |
| format | Article |
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It is experimentally established that the optimal initial condition for GaN epitaxy on Si(111) substrates is high-temperature nitridation of the Si(111) substrate carried out immediately before GaN growth. It is shown that it is possible to control the polarity of GaN by means of appropriate choice of the growth under conditions with N or Ga enrichment at the initial stage of GaN/Si(111) epitaxy.</description><subject>2018</subject><subject>CRYSTAL GROWTH</subject><subject>Epitaxial growth</subject><subject>GALLIUM NITRIDES</subject><subject>Initial conditions</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>March 12–15</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>Nitrogen</subject><subject>Nizhny Novgorod</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Polarity</subject><subject>Silicon substrates</subject><subject>Stoichiometry</subject><subject>SUBSTRATES</subject><subject>TEMPERATURE RANGE 0400-1000 K</subject><subject>Xxii International Symposium “Nanophysics and Nanoelectronics”</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kctOwzAQRSMEEs8PYGeJDSwCHtt5LQG1pRIvqbCOJs6kNUrjYjuC_j2pimCBWM1o5tyr0dwoOgV-CSDV1Qx4KrNcpJCD4JAlO9EB8ILHqcqK3U2fyniz348OvX_jHCBP1EEUxoShd-SZbVhYEJt2Jhhs2SzgnDbDCT6yibMfYcFsx2bmHAAu2KyvfHAYBmG1Zo8mODunLn5u0S8xvvbe-EA1e7At6b5FF98QLtloZQJ-ro-jvQZbTyff9Sh6HY9ebu_i-6fJ9Pb6PtZSqRALLLSuFcoaKiSAVOuKU1ET8ASlVkI0BYIgSKDidZ4TNioXRSYp4VLLWh5FZ1tf64MpvTaB9ELbriMdSiEyVWTD836olbPvPflQvtnedcNhpQDJc5mlIh0o2FLaWe8dNeXKmSW6dQm83ERQ_olg0Iitxg9sNyf36_y_6AvcoobA</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Mizerov, A. 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| subjects | 2018 CRYSTAL GROWTH Epitaxial growth GALLIUM NITRIDES Initial conditions Magnetic Materials Magnetism March 12–15 MATERIALS SCIENCE MOLECULAR BEAM EPITAXY Nitrogen Nizhny Novgorod Physics Physics and Astronomy Polarity Silicon substrates Stoichiometry SUBSTRATES TEMPERATURE RANGE 0400-1000 K Xxii International Symposium “Nanophysics and Nanoelectronics” |
| title | Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
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