Ionisation response in semiconductor structures exposed to the X-ray radiation of a femtosecond laser-plasma source

The possibilities of applying a femtosecond laser-plasma source of X-ray radiation for modelling the effect of single nuclear particles based on the principle of equivalent charge generation are analysed. The parameters of femtosecond X-ray radiation for the experimental modelling of individual radi...

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Veröffentlicht in:	Quantum electronics (Woodbury, N.Y.) N.Y.), 2017-07, Vol.47 (6), p.528-532
Hauptverfasser:	Chumakov, A.I., Belova, M.P., Kessarinsky, L.N., Borisov, A.Ya, Ivanov, K.A., Tsymbalov, I.N., Volkov, R.V., Savel'ev, A.B., Galanina, L.I., Chirskaya, N.P., Novikov, L.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	COMPUTERIZED SIMULATION Electronic devices ELECTRONIC EQUIPMENT femtosecond laser plasma INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY IONIZATION LASER-PRODUCED PLASMA Modelling Nuclear particles PHYSICS OF ELEMENTARY PARTICLES AND FIELDS Plasma RADIATION EFFECTS semiconductor devices SEMICONDUCTOR MATERIALS single event effects X RADIATION X-ray radiation
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Zusammenfassung:	The possibilities of applying a femtosecond laser-plasma source of X-ray radiation for modelling the effect of single nuclear particles based on the principle of equivalent charge generation are analysed. The parameters of femtosecond X-ray radiation for the experimental modelling of individual radiation effects are validated. The experimental setup forming the X-ray radiation is described. The results of comparative ionisation response modelling in simple electronic devices using the FLUKA and FEANT codes are presented.
ISSN:	1063-7818 1468-4799
DOI:	10.1070/QEL16364