Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

In this publication, the results of development of the technology of the epitaxial growth of GaN on single-crystal langasite substrates La 3 Ga 5 SiO 14 (0001) by the plasma-assisted molecular-beam epitaxy (PA MBE) method are reported. An investigation of the effect of the growth temperature at the...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2016-11, Vol.50 (11), p.1511-1514
Hauptverfasser:	Lobanov, D. N., Novikov, A. V., Yunin, P. A., Skorohodov, E. V., Shaleev, M. V., Drozdov, M. N., Khrykin, O. I., Buzanov, O. A., Alenkov, V. V., Folomin, P. I., Gritsenko, A. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	2016 DEPOSITION DIFFUSION Dislocation density DISLOCATIONS Epitaxy GALLIUM NITRIDES LAYERS Liquor Magnetic Materials Magnetism March 14–18 MATERIALS SCIENCE Methods MOLECULAR BEAM EPITAXY MONOCRYSTALS MORPHOLOGY Nizhny Novgorod NUCLEATION OXYGEN Physics Physics and Astronomy ROUGHNESS Single crystals SUBSTRATES SURFACES TEMPERATURE RANGE 0400-1000 K XX International Symposium “Nanophysics and Nanoelectronics”
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