Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zon...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-01, Vol.51 (1), p.38-42
Hauptverfasser: Krishtopenko, S. S., Ikonnikov, A. V., Maremyanin, K. V., Bovkun, L. S., Spirin, K. E., Kadykov, A. M., Marcinkiewicz, M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Semyagin, B. R., Putyato, M. A., Emelyanov, E. A., Preobrazhenskii, V. V., Gavrilenko, V. I.
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM COMPOUNDS
Band structure
Band structure of solids
BRILLOUIN ZONES
CONCENTRATION RATIO
Condensed Matter
CYCLOTRON RESONANCE
ELECTRONS
ENERGY GAP
Fermions
GALLIUM ANTIMONIDES
Graphene
INDIUM ARSENIDES
LAYERS
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
NANOSCIENCE AND NANOTECHNOLOGY
Physics
Physics and Astronomy
Quantum Phenomena
QUANTUM WELLS
Semiconductor Structures
TWO-DIMENSIONAL SYSTEMS
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Zusammenfassung:The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617010109