Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells
The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in n -type structures reach several microse...
Gespeichert in:
| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2016-12, Vol.50 (12), p.1651-1656 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1656 |
|---|---|
| container_issue | 12 |
| container_start_page | 1651 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 50 |
| creator | Rumyantsev, V. V. Fadeev, M. A. Morozov, S. V. Dubinov, A. A. Kudryavtsev, K. E. Kadykov, A. M. Tuzov, I. V. Dvoretskii, S. A. Mikhailov, N. N. Gavrilenko, V. I. Teppe, F. |
| description | The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in
n
-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm
2
) at 20 K. In the
p
-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination. |
| doi_str_mv | 10.1134/S1063782616120174 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22645276</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A498129764</galeid><sourcerecordid>A498129764</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-3f7231ad36f2601fcad52e372c61361e2a1bc80109973856cf9b34f97d463d883</originalsourceid><addsrcrecordid>eNp1kV1rHCEUhoeSQj7aH5C7gV5P6lFHncuw5AsWetH0Wlw9TgyzTladLPn3cdlACqV4oejzvJzjaZpLIFcAjP_8DUQwqagAAZSA5F-aMyAD6QSXw8nhLFh3eD9tznN-JgRA9fys2a3nOHZ784oTxrE8tbmE7TKZgq7Fbcg5zLE10bXWpBQwtVPwWBHMbYjt_bhyj9htTK74IWRcgsOakRZbllShfaiZu8XEsmzbPU5T_tZ89WbK-P1jv2j-3N48ru679a-7h9X1urNMsdIxLykD45jwVBDw1rieIpPUCmACkBrYWEVqj4NkqhfWDxvG_SAdF8wpxS6aH8fcubaksw0F7ZOdY0RbNKWC91SKT-olzbsFc9HP85JiLUyDUkSqHuRQqasjNZoJdYh-LsnYulz9o5qJPtT7az4ooIMUvApwFGyac07o9UsKW5PeNBB9GJj-Z2DVoUcnVzaOmP4q5b_SO315l1s</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880785179</pqid></control><display><type>article</type><title>Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells</title><source>SpringerLink (Online service)</source><creator>Rumyantsev, V. V. ; Fadeev, M. A. ; Morozov, S. V. ; Dubinov, A. A. ; Kudryavtsev, K. E. ; Kadykov, A. M. ; Tuzov, I. V. ; Dvoretskii, S. A. ; Mikhailov, N. N. ; Gavrilenko, V. I. ; Teppe, F.</creator><creatorcontrib>Rumyantsev, V. V. ; Fadeev, M. A. ; Morozov, S. V. ; Dubinov, A. A. ; Kudryavtsev, K. E. ; Kadykov, A. M. ; Tuzov, I. V. ; Dvoretskii, S. A. ; Mikhailov, N. N. ; Gavrilenko, V. I. ; Teppe, F.</creatorcontrib><description>The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in
n
-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm
2
) at 20 K. In the
p
-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782616120174</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>2016 ; ANNEALING ; Cadmium compounds ; CADMIUM TELLURIDES ; CARRIER LIFETIME ; CHARGE CARRIERS ; CONCENTRATION RATIO ; Emission analysis ; Lasers ; Magnetic Materials ; Magnetism ; March 14–18 ; MATERIALS SCIENCE ; MERCURY ; Mercury cadmium tellurides ; MERCURY COMPOUNDS ; Nizhny Novgorod ; OPTICAL PUMPING ; P-TYPE CONDUCTORS ; PHOTOCONDUCTIVITY ; PHOTOLUMINESCENCE ; Physics ; Physics and Astronomy ; QUANTUM WELLS ; Radiation (Physics) ; RECOMBINATION ; RELAXATION ; Spontaneous emission ; STIMULATED EMISSION ; VACANCIES ; Waveguides ; WAVELENGTHS ; XX International Symposium “Nanophysics and Nanoelectronics”</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1651-1656</ispartof><rights>Pleiades Publishing, Ltd. 2016</rights><rights>COPYRIGHT 2016 Springer</rights><rights>Copyright Springer Science & Business Media 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-3f7231ad36f2601fcad52e372c61361e2a1bc80109973856cf9b34f97d463d883</citedby><cites>FETCH-LOGICAL-c383t-3f7231ad36f2601fcad52e372c61361e2a1bc80109973856cf9b34f97d463d883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782616120174$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782616120174$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22645276$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Rumyantsev, V. V.</creatorcontrib><creatorcontrib>Fadeev, M. A.</creatorcontrib><creatorcontrib>Morozov, S. V.</creatorcontrib><creatorcontrib>Dubinov, A. A.</creatorcontrib><creatorcontrib>Kudryavtsev, K. E.</creatorcontrib><creatorcontrib>Kadykov, A. M.</creatorcontrib><creatorcontrib>Tuzov, I. V.</creatorcontrib><creatorcontrib>Dvoretskii, S. A.</creatorcontrib><creatorcontrib>Mikhailov, N. N.</creatorcontrib><creatorcontrib>Gavrilenko, V. I.</creatorcontrib><creatorcontrib>Teppe, F.</creatorcontrib><title>Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in
n
-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm
2
) at 20 K. In the
p
-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.</description><subject>2016</subject><subject>ANNEALING</subject><subject>Cadmium compounds</subject><subject>CADMIUM TELLURIDES</subject><subject>CARRIER LIFETIME</subject><subject>CHARGE CARRIERS</subject><subject>CONCENTRATION RATIO</subject><subject>Emission analysis</subject><subject>Lasers</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>March 14–18</subject><subject>MATERIALS SCIENCE</subject><subject>MERCURY</subject><subject>Mercury cadmium tellurides</subject><subject>MERCURY COMPOUNDS</subject><subject>Nizhny Novgorod</subject><subject>OPTICAL PUMPING</subject><subject>P-TYPE CONDUCTORS</subject><subject>PHOTOCONDUCTIVITY</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>QUANTUM WELLS</subject><subject>Radiation (Physics)</subject><subject>RECOMBINATION</subject><subject>RELAXATION</subject><subject>Spontaneous emission</subject><subject>STIMULATED EMISSION</subject><subject>VACANCIES</subject><subject>Waveguides</subject><subject>WAVELENGTHS</subject><subject>XX International Symposium “Nanophysics and Nanoelectronics”</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kV1rHCEUhoeSQj7aH5C7gV5P6lFHncuw5AsWetH0Wlw9TgyzTladLPn3cdlACqV4oejzvJzjaZpLIFcAjP_8DUQwqagAAZSA5F-aMyAD6QSXw8nhLFh3eD9tznN-JgRA9fys2a3nOHZ784oTxrE8tbmE7TKZgq7Fbcg5zLE10bXWpBQwtVPwWBHMbYjt_bhyj9htTK74IWRcgsOakRZbllShfaiZu8XEsmzbPU5T_tZ89WbK-P1jv2j-3N48ru679a-7h9X1urNMsdIxLykD45jwVBDw1rieIpPUCmACkBrYWEVqj4NkqhfWDxvG_SAdF8wpxS6aH8fcubaksw0F7ZOdY0RbNKWC91SKT-olzbsFc9HP85JiLUyDUkSqHuRQqasjNZoJdYh-LsnYulz9o5qJPtT7az4ooIMUvApwFGyac07o9UsKW5PeNBB9GJj-Z2DVoUcnVzaOmP4q5b_SO315l1s</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>Rumyantsev, V. V.</creator><creator>Fadeev, M. A.</creator><creator>Morozov, S. V.</creator><creator>Dubinov, A. A.</creator><creator>Kudryavtsev, K. E.</creator><creator>Kadykov, A. M.</creator><creator>Tuzov, I. V.</creator><creator>Dvoretskii, S. A.</creator><creator>Mikhailov, N. N.</creator><creator>Gavrilenko, V. I.</creator><creator>Teppe, F.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20161201</creationdate><title>Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells</title><author>Rumyantsev, V. V. ; Fadeev, M. A. ; Morozov, S. V. ; Dubinov, A. A. ; Kudryavtsev, K. E. ; Kadykov, A. M. ; Tuzov, I. V. ; Dvoretskii, S. A. ; Mikhailov, N. N. ; Gavrilenko, V. I. ; Teppe, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-3f7231ad36f2601fcad52e372c61361e2a1bc80109973856cf9b34f97d463d883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>2016</topic><topic>ANNEALING</topic><topic>Cadmium compounds</topic><topic>CADMIUM TELLURIDES</topic><topic>CARRIER LIFETIME</topic><topic>CHARGE CARRIERS</topic><topic>CONCENTRATION RATIO</topic><topic>Emission analysis</topic><topic>Lasers</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>March 14–18</topic><topic>MATERIALS SCIENCE</topic><topic>MERCURY</topic><topic>Mercury cadmium tellurides</topic><topic>MERCURY COMPOUNDS</topic><topic>Nizhny Novgorod</topic><topic>OPTICAL PUMPING</topic><topic>P-TYPE CONDUCTORS</topic><topic>PHOTOCONDUCTIVITY</topic><topic>PHOTOLUMINESCENCE</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>QUANTUM WELLS</topic><topic>Radiation (Physics)</topic><topic>RECOMBINATION</topic><topic>RELAXATION</topic><topic>Spontaneous emission</topic><topic>STIMULATED EMISSION</topic><topic>VACANCIES</topic><topic>Waveguides</topic><topic>WAVELENGTHS</topic><topic>XX International Symposium “Nanophysics and Nanoelectronics”</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rumyantsev, V. V.</creatorcontrib><creatorcontrib>Fadeev, M. A.</creatorcontrib><creatorcontrib>Morozov, S. V.</creatorcontrib><creatorcontrib>Dubinov, A. A.</creatorcontrib><creatorcontrib>Kudryavtsev, K. E.</creatorcontrib><creatorcontrib>Kadykov, A. M.</creatorcontrib><creatorcontrib>Tuzov, I. V.</creatorcontrib><creatorcontrib>Dvoretskii, S. A.</creatorcontrib><creatorcontrib>Mikhailov, N. N.</creatorcontrib><creatorcontrib>Gavrilenko, V. I.</creatorcontrib><creatorcontrib>Teppe, F.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rumyantsev, V. V.</au><au>Fadeev, M. A.</au><au>Morozov, S. V.</au><au>Dubinov, A. A.</au><au>Kudryavtsev, K. E.</au><au>Kadykov, A. M.</au><au>Tuzov, I. V.</au><au>Dvoretskii, S. A.</au><au>Mikhailov, N. N.</au><au>Gavrilenko, V. I.</au><au>Teppe, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2016-12-01</date><risdate>2016</risdate><volume>50</volume><issue>12</issue><spage>1651</spage><epage>1656</epage><pages>1651-1656</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in
n
-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm
2
) at 20 K. In the
p
-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782616120174</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1651-1656 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22645276 |
| source | SpringerLink (Online service) |
| subjects | 2016 ANNEALING Cadmium compounds CADMIUM TELLURIDES CARRIER LIFETIME CHARGE CARRIERS CONCENTRATION RATIO Emission analysis Lasers Magnetic Materials Magnetism March 14–18 MATERIALS SCIENCE MERCURY Mercury cadmium tellurides MERCURY COMPOUNDS Nizhny Novgorod OPTICAL PUMPING P-TYPE CONDUCTORS PHOTOCONDUCTIVITY PHOTOLUMINESCENCE Physics Physics and Astronomy QUANTUM WELLS Radiation (Physics) RECOMBINATION RELAXATION Spontaneous emission STIMULATED EMISSION VACANCIES Waveguides WAVELENGTHS XX International Symposium “Nanophysics and Nanoelectronics” |
| title | Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T06%3A25%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Long-wavelength%20stimulated%20emission%20and%20carrier%20lifetimes%20in%20HgCdTe-based%20waveguide%20structures%20with%20quantum%20wells&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Rumyantsev,%20V.%20V.&rft.date=2016-12-01&rft.volume=50&rft.issue=12&rft.spage=1651&rft.epage=1656&rft.pages=1651-1656&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782616120174&rft_dat=%3Cgale_osti_%3EA498129764%3C/gale_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1880785179&rft_id=info:pmid/&rft_galeid=A498129764&rfr_iscdi=true |