Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor
In order to improve the reliability of TFT, an Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding en...
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| Veröffentlicht in: | AIP advances 2016-03, Vol.6 (3), p.035315-035315-6 |
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| creator | Kim, Dongha Park, Hyungjin Bae, Byeong-Soo |
| description | In order to improve the reliability of TFT, an Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al2O3 layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V o
2+ toward the interface between the gate insulator and the semiconductor. The inserted Al2O3 triple layer exhibits a noticeably low turn on voltage shift of −0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm2/V ⋅ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies. |
| doi_str_mv | 10.1063/1.4944833 |
| format | Article |
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2+ toward the interface between the gate insulator and the semiconductor. The inserted Al2O3 triple layer exhibits a noticeably low turn on voltage shift of −0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm2/V ⋅ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.4944833</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ALUMINIUM OXIDES ; Aluminum oxide ; ATOMS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DEPLETION LAYER ; Desserts ; DOPED MATERIALS ; Fluorine ; FLUORINE ADDITIONS ; HOLES ; Indium ; INTERFACES ; Migration ; OXYGEN ; Oxygen atoms ; OXYGEN IONS ; RELIABILITY ; Semiconductor devices ; SEMICONDUCTOR MATERIALS ; SOL-GEL PROCESS ; Sol-gel processes ; STABILITY ; Thin film transistors ; THIN FILMS ; TRANSISTORS ; VACANCIES ; Zinc oxide ; ZINC OXIDES</subject><ispartof>AIP advances, 2016-03, Vol.6 (3), p.035315-035315-6</ispartof><rights>Author(s)</rights><rights>2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c456t-736cfa1ff50114c3877537b3f74aa2743f0f530002860481bf39671de6f7c1d63</citedby><cites>FETCH-LOGICAL-c456t-736cfa1ff50114c3877537b3f74aa2743f0f530002860481bf39671de6f7c1d63</cites><orcidid>0000-0001-9424-1830 ; 0000-0003-0320-1441</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,864,885,2101,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22611633$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Dongha</creatorcontrib><creatorcontrib>Park, Hyungjin</creatorcontrib><creatorcontrib>Bae, Byeong-Soo</creatorcontrib><title>Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor</title><title>AIP advances</title><description>In order to improve the reliability of TFT, an Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al2O3 layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V o
2+ toward the interface between the gate insulator and the semiconductor. The inserted Al2O3 triple layer exhibits a noticeably low turn on voltage shift of −0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm2/V ⋅ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.</description><subject>ALUMINIUM OXIDES</subject><subject>Aluminum oxide</subject><subject>ATOMS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DEPLETION LAYER</subject><subject>Desserts</subject><subject>DOPED MATERIALS</subject><subject>Fluorine</subject><subject>FLUORINE ADDITIONS</subject><subject>HOLES</subject><subject>Indium</subject><subject>INTERFACES</subject><subject>Migration</subject><subject>OXYGEN</subject><subject>Oxygen atoms</subject><subject>OXYGEN IONS</subject><subject>RELIABILITY</subject><subject>Semiconductor devices</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SOL-GEL PROCESS</subject><subject>Sol-gel processes</subject><subject>STABILITY</subject><subject>Thin film transistors</subject><subject>THIN FILMS</subject><subject>TRANSISTORS</subject><subject>VACANCIES</subject><subject>Zinc oxide</subject><subject>ZINC OXIDES</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kUFvFCEUgCdGE5vag_-AxJMmU4eBAfZoGrVNmvSiZ8I8YOdtZmEEprr9Lf5Yqdu0Jk3kAg--98HjNc1b2p3TTrCP9JxvOFeMvWhOejqolvW9ePnP-nVzlvOuq4NvaKf4SfP7ErfTfCC4X1K8dZYsUyyxxWBXqNGIJpNczIgzlgOJnmQT7E-EqR6WhMvsyGwOLlUorVDW5AgGkuPcbt1MqhNczpX18xoTBtfauNSw-nHdkzsMQOIvtI6UqeZ5nPdVa0LGXGJ607zyZs7u7GE-bb5_-fzt4rK9vvl6dfHpugU-iNJKJsAb6v3QUcqBKSkHJkfmJTeml5z5zg-sFt0r0XFFR882QlLrhJdArWCnzdXRa6PZ6SXh3qSDjgb1342YttqkgjA7PcAIauzHzgrgbuRKWgArreTAvRKb6np3dMVcUGfA4mCCGIKDomsLKBWMPVH1h36sLhe9i2sKtUjd054qJiWTlXp_pCDFnJPzj2-jnb7vuKb6oeOV_XBk7680BWN4hG9jegL1Yv3_4OfmP6Lvu7U</recordid><startdate>20160301</startdate><enddate>20160301</enddate><creator>Kim, Dongha</creator><creator>Park, Hyungjin</creator><creator>Bae, Byeong-Soo</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0001-9424-1830</orcidid><orcidid>https://orcid.org/0000-0003-0320-1441</orcidid></search><sort><creationdate>20160301</creationdate><title>Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor</title><author>Kim, Dongha ; Park, Hyungjin ; Bae, Byeong-Soo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c456t-736cfa1ff50114c3877537b3f74aa2743f0f530002860481bf39671de6f7c1d63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>ALUMINIUM OXIDES</topic><topic>Aluminum oxide</topic><topic>ATOMS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DEPLETION LAYER</topic><topic>Desserts</topic><topic>DOPED MATERIALS</topic><topic>Fluorine</topic><topic>FLUORINE ADDITIONS</topic><topic>HOLES</topic><topic>Indium</topic><topic>INTERFACES</topic><topic>Migration</topic><topic>OXYGEN</topic><topic>Oxygen atoms</topic><topic>OXYGEN IONS</topic><topic>RELIABILITY</topic><topic>Semiconductor devices</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SOL-GEL PROCESS</topic><topic>Sol-gel processes</topic><topic>STABILITY</topic><topic>Thin film transistors</topic><topic>THIN FILMS</topic><topic>TRANSISTORS</topic><topic>VACANCIES</topic><topic>Zinc oxide</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Dongha</creatorcontrib><creatorcontrib>Park, Hyungjin</creatorcontrib><creatorcontrib>Bae, Byeong-Soo</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Dongha</au><au>Park, Hyungjin</au><au>Bae, Byeong-Soo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor</atitle><jtitle>AIP advances</jtitle><date>2016-03-01</date><risdate>2016</risdate><volume>6</volume><issue>3</issue><spage>035315</spage><epage>035315-6</epage><pages>035315-035315-6</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>In order to improve the reliability of TFT, an Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al2O3 layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V o
2+ toward the interface between the gate insulator and the semiconductor. The inserted Al2O3 triple layer exhibits a noticeably low turn on voltage shift of −0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm2/V ⋅ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4944833</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-9424-1830</orcidid><orcidid>https://orcid.org/0000-0003-0320-1441</orcidid><oa>free_for_read</oa></addata></record> |
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| source | DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | ALUMINIUM OXIDES Aluminum oxide ATOMS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DEPLETION LAYER Desserts DOPED MATERIALS Fluorine FLUORINE ADDITIONS HOLES Indium INTERFACES Migration OXYGEN Oxygen atoms OXYGEN IONS RELIABILITY Semiconductor devices SEMICONDUCTOR MATERIALS SOL-GEL PROCESS Sol-gel processes STABILITY Thin film transistors THIN FILMS TRANSISTORS VACANCIES Zinc oxide ZINC OXIDES |
| title | Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor |
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