Helium ion beam enhanced local etching of silicon nitride

We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. Helium ions were implanted into 500-nm-thick silicon nitride film with energies from 15 keV to 35 keV. The ion fluence from 1014 cm−2 to 1017 cm−2 was used. All samples were investi...

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