Investigations of electrical and optical properties of low energy ion irradiated α-Fe{sub 2}O{sub 3} (hematite) thin films
Thin films of α-Fe{sub 2}O{sub 3} of thickness ~100 nm were synthesized on Si (100) and glass substrates by thermal evaporation method. The as deposited films were annealed at 400°C in Oxygen environment for 2 hours to obtain the desired phase. The annealed films found to be polycrystalline in natur...
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| creator | Sulania, Indra Kanjilal, D. Kaswan, Jyoti Attatappa, Vinesh Karn, Ranjeet Kumar Agarwal, D. C. |
| description | Thin films of α-Fe{sub 2}O{sub 3} of thickness ~100 nm were synthesized on Si (100) and glass substrates by thermal evaporation method. The as deposited films were annealed at 400°C in Oxygen environment for 2 hours to obtain the desired phase. The annealed films found to be polycrystalline in nature with an average crystallite size ~7 nm. The direct and indirect band gaps were found to be 2.2 and 1.5 eV respectively for annealed films using. I-V characteristics and Hall-effect measurement of annealed films showed n-type semi conducting behavior. Further, films were irradiated with nitrogen ions of energy 10 keV at an ion fluence of 1×10{sup 18} ions/cm{sup 2}. After irradiation, a decrease in both direct as well as indirect band gap was observed, from 2.2 to 2.1 eV and 1.5 to 1.3 eV respectively. I-V characteristic and Hall-Effect measurement confirmed change in conductivity of the films from n-type to p-type after irradiation, which can have possible applications in semi conducting device fabrications. |
| doi_str_mv | 10.1063/1.4948093 |
| format | Article |
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I-V characteristic and Hall-Effect measurement confirmed change in conductivity of the films from n-type to p-type after irradiation, which can have possible applications in semi conducting device fabrications.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.4948093</identifier><language>eng</language><publisher>United States</publisher><subject>ANNEALING ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; ELECTRIC CONDUCTIVITY ; EVAPORATION ; FERRITES ; GLASS ; HALL EFFECT ; IRON OXIDES ; IRRADIATION ; KEV RANGE ; NITROGEN ; NITROGEN IONS ; OPTICAL PROPERTIES ; OXYGEN ; POLYCRYSTALS ; SUBSTRATES ; THICKNESS ; THIN FILMS</subject><ispartof>AIP conference proceedings, 2016-05, Vol.1731 (1)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22608823$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sulania, Indra</creatorcontrib><creatorcontrib>Kanjilal, D.</creatorcontrib><creatorcontrib>Kaswan, Jyoti</creatorcontrib><creatorcontrib>Attatappa, Vinesh</creatorcontrib><creatorcontrib>Karn, Ranjeet Kumar</creatorcontrib><creatorcontrib>Agarwal, D. C.</creatorcontrib><title>Investigations of electrical and optical properties of low energy ion irradiated α-Fe{sub 2}O{sub 3} (hematite) thin films</title><title>AIP conference proceedings</title><description>Thin films of α-Fe{sub 2}O{sub 3} of thickness ~100 nm were synthesized on Si (100) and glass substrates by thermal evaporation method. The as deposited films were annealed at 400°C in Oxygen environment for 2 hours to obtain the desired phase. The annealed films found to be polycrystalline in nature with an average crystallite size ~7 nm. The direct and indirect band gaps were found to be 2.2 and 1.5 eV respectively for annealed films using. I-V characteristics and Hall-effect measurement of annealed films showed n-type semi conducting behavior. Further, films were irradiated with nitrogen ions of energy 10 keV at an ion fluence of 1×10{sup 18} ions/cm{sup 2}. After irradiation, a decrease in both direct as well as indirect band gap was observed, from 2.2 to 2.1 eV and 1.5 to 1.3 eV respectively. I-V characteristic and Hall-Effect measurement confirmed change in conductivity of the films from n-type to p-type after irradiation, which can have possible applications in semi conducting device fabrications.</description><subject>ANNEALING</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>EVAPORATION</subject><subject>FERRITES</subject><subject>GLASS</subject><subject>HALL EFFECT</subject><subject>IRON OXIDES</subject><subject>IRRADIATION</subject><subject>KEV RANGE</subject><subject>NITROGEN</subject><subject>NITROGEN IONS</subject><subject>OPTICAL PROPERTIES</subject><subject>OXYGEN</subject><subject>POLYCRYSTALS</subject><subject>SUBSTRATES</subject><subject>THICKNESS</subject><subject>THIN FILMS</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqNjjtOAzEURS0EUoZAkR08iSYUE_yZzKdGiZKKhiJdZDxvMkaOPbINCEVZFBthTVijLIDq3OJc3UvIjNEFo6V4YouiKWraiCuSseWS5VXJymuSUdoUOS_EbkJuQ3inlDdVVWfktLWfGKI-yKidDeA6QIMqeq2kAWlbcEMc8-DdgD5qHCXjvgAt-sM3pB5o72WrZcQWfn_yNZ7Cxxvw88tIcYZ5j8e0EPERYq8tdNocwx256aQJeH_hlDysV6_Pm9ylQ_ugkq565axNf_acl7SuuRD_s_4A9MdUzw</recordid><startdate>20160523</startdate><enddate>20160523</enddate><creator>Sulania, Indra</creator><creator>Kanjilal, D.</creator><creator>Kaswan, Jyoti</creator><creator>Attatappa, Vinesh</creator><creator>Karn, Ranjeet Kumar</creator><creator>Agarwal, D. C.</creator><scope>OTOTI</scope></search><sort><creationdate>20160523</creationdate><title>Investigations of electrical and optical properties of low energy ion irradiated α-Fe{sub 2}O{sub 3} (hematite) thin films</title><author>Sulania, Indra ; Kanjilal, D. ; Kaswan, Jyoti ; Attatappa, Vinesh ; Karn, Ranjeet Kumar ; Agarwal, D. 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C.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>AIP conference proceedings</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sulania, Indra</au><au>Kanjilal, D.</au><au>Kaswan, Jyoti</au><au>Attatappa, Vinesh</au><au>Karn, Ranjeet Kumar</au><au>Agarwal, D. C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigations of electrical and optical properties of low energy ion irradiated α-Fe{sub 2}O{sub 3} (hematite) thin films</atitle><jtitle>AIP conference proceedings</jtitle><date>2016-05-23</date><risdate>2016</risdate><volume>1731</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><abstract>Thin films of α-Fe{sub 2}O{sub 3} of thickness ~100 nm were synthesized on Si (100) and glass substrates by thermal evaporation method. The as deposited films were annealed at 400°C in Oxygen environment for 2 hours to obtain the desired phase. The annealed films found to be polycrystalline in nature with an average crystallite size ~7 nm. The direct and indirect band gaps were found to be 2.2 and 1.5 eV respectively for annealed films using. I-V characteristics and Hall-effect measurement of annealed films showed n-type semi conducting behavior. Further, films were irradiated with nitrogen ions of energy 10 keV at an ion fluence of 1×10{sup 18} ions/cm{sup 2}. After irradiation, a decrease in both direct as well as indirect band gap was observed, from 2.2 to 2.1 eV and 1.5 to 1.3 eV respectively. I-V characteristic and Hall-Effect measurement confirmed change in conductivity of the films from n-type to p-type after irradiation, which can have possible applications in semi conducting device fabrications.</abstract><cop>United States</cop><doi>10.1063/1.4948093</doi></addata></record> |
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| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2016-05, Vol.1731 (1) |
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| source | AIP Journals Complete |
| subjects | ANNEALING CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRIC CONDUCTIVITY EVAPORATION FERRITES GLASS HALL EFFECT IRON OXIDES IRRADIATION KEV RANGE NITROGEN NITROGEN IONS OPTICAL PROPERTIES OXYGEN POLYCRYSTALS SUBSTRATES THICKNESS THIN FILMS |
| title | Investigations of electrical and optical properties of low energy ion irradiated α-Fe{sub 2}O{sub 3} (hematite) thin films |
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