The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization

100 nm thick RuMoC films and 5 nm thick RuMoC films with Cu capping have been deposited on Si(111) by magnetron co-sputtering with Ru and MoC confocal targets. The samples were subsequently annealed at temperatures ranging from 450 to 650 °C in vacuum at a pressure of 3 × 10−4 Pa to study the anneal...

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