Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy

GaN nanotubes with coaxial InGaN quantum wells were analyzed by scanning transmission electron microscopy in order to determine their structural properties as well as the indium distribution across the InGaN quantum wells. For the latter, two process steps are necessary. First, a technique to prepar...

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Veröffentlicht in:	Journal of applied physics 2016-05, Vol.119 (17)
Hauptverfasser:	Aschenbrenner, T., Schowalter, M., Mehrtens, T., Müller-Caspary, K., Fikry, M., Heinz, D., Tischer, I., Madel, M., Thonke, K., Hommel, D., Scholz, F., Rosenauer, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CATHODOLUMINESCENCE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTALLOGRAPHY ELECTRONS GALLIUM NITRIDES INDIUM Indium gallium nitrides INDIUM NITRIDES Multi Quantum Wells NANOTUBES Planes QUANTUM WELLS Scanning electron microscopy Scanning transmission electron microscopy SIGNALS TRANSMISSION ELECTRON MICROSCOPY
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