Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

Heterostructures with CdTe and CdTe{sub 1-x}Se{sub x} (x ∼ 0.01) absorbers between two wider-band-gap Cd{sub 1-x}Mg{sub x}Te barriers (x ∼ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of...

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Veröffentlicht in:	Applied physics letters 2016-08, Vol.109 (9)
Hauptverfasser:	Zaunbrecher, Katherine N., National Renewable Energy Laboratory, Golden, Colorado 80401, Kuciauskas, Darius, Dippo, Pat, Barnes, Teresa M., Swartz, Craig H., Edirisooriya, Madhavie, Ogedengbe, Olanrewaju S., Sohal, Sandeep, Hancock, Bobby L., LeBlanc, Elizabeth G., Jayathilaka, Pathiraja A. R. D., Myers, Thomas H.
Format:	Artikel
Sprache:	eng
Schlagworte:	CADMIUM TELLURIDES CHARGE CARRIERS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTALLOGRAPHY DIFFUSION LENGTH DISLOCATIONS EMISSION SPECTROSCOPY INDIUM ANTIMONIDES MOLECULAR BEAM EPITAXY MOLECULAR BEAMS PHONONS PHOTOLUMINESCENCE RECOMBINATION TIME RESOLUTION
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