Effect of van der Waals interactions on the structural and binding properties of GaSe
The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method within density functional theory. We employed the conventional local/semilocal exchange-correlation...
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Veröffentlicht in: | Journal of solid state chemistry 2015-12, Vol.232, p.67-72 |
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creator | Sarkisov, Sergey Y. Kosobutsky, Alexey V. Shandakov, Sergey D. |
description | The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method within density functional theory. We employed the conventional local/semilocal exchange-correlation functionals and recently developed van der Waals functionals which are able to describe dispersion forces. It is found that application of van der Waals density functionals allows to substantially increase the accuracy of calculations of the lattice constants a and c and interlayer distance in GaSe at ambient conditions and under hydrostatic pressure. The pressure dependences of the a-parameter, Ga–Ga, Ga–Se bond lengths and Ga–Ga–Se bond angle are characterized by a relatively low curvature, while c(p) has a distinct downward bowing due to nonlinear shrinking of the interlayer spacing. From the calculated binding energy curves we deduce the interlayer binding energy of GaSe, which is found to be in the range 0.172–0.197eV/layer (14.2–16.2meV/Å2).
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•Effects of van der Waals interactions are analyzed using advanced density functionals.•Calculations with vdW-corrected functionals closely agree with experiment.•Interlayer binding energy of GaSe is estimated to be 14.2–16.2meV/Å2. |
doi_str_mv | 10.1016/j.jssc.2015.09.002 |
format | Article |
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[Display omitted]
•Effects of van der Waals interactions are analyzed using advanced density functionals.•Calculations with vdW-corrected functionals closely agree with experiment.•Interlayer binding energy of GaSe is estimated to be 14.2–16.2meV/Å2.</description><identifier>ISSN: 0022-4596</identifier><identifier>EISSN: 1095-726X</identifier><identifier>DOI: 10.1016/j.jssc.2015.09.002</identifier><language>eng</language><publisher>United States: Elsevier Inc</publisher><subject>Ab initio calculations ; ACCURACY ; BINDING ENERGY ; Binding properties ; BOND ANGLE ; BOND LENGTHS ; CRYSTAL STRUCTURE ; CRYSTALS ; DENSITY ; DENSITY FUNCTIONAL METHOD ; DISPERSIONS ; GALLIUM SELENIDES ; INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY ; INTERACTIONS ; LATTICE PARAMETERS ; Layered semiconductors ; LAYERS ; MEV RANGE ; PRESSURE DEPENDENCE ; SEMICONDUCTOR MATERIALS ; VAN DER WAALS FORCES</subject><ispartof>Journal of solid state chemistry, 2015-12, Vol.232, p.67-72</ispartof><rights>2015 Elsevier Inc.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-1211963d28c2908e6f763e071f287c433cf4c5417f771da8dc07edf1065277fb3</citedby><cites>FETCH-LOGICAL-c328t-1211963d28c2908e6f763e071f287c433cf4c5417f771da8dc07edf1065277fb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jssc.2015.09.002$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,780,784,885,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22573962$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sarkisov, Sergey Y.</creatorcontrib><creatorcontrib>Kosobutsky, Alexey V.</creatorcontrib><creatorcontrib>Shandakov, Sergey D.</creatorcontrib><title>Effect of van der Waals interactions on the structural and binding properties of GaSe</title><title>Journal of solid state chemistry</title><description>The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method within density functional theory. We employed the conventional local/semilocal exchange-correlation functionals and recently developed van der Waals functionals which are able to describe dispersion forces. It is found that application of van der Waals density functionals allows to substantially increase the accuracy of calculations of the lattice constants a and c and interlayer distance in GaSe at ambient conditions and under hydrostatic pressure. The pressure dependences of the a-parameter, Ga–Ga, Ga–Se bond lengths and Ga–Ga–Se bond angle are characterized by a relatively low curvature, while c(p) has a distinct downward bowing due to nonlinear shrinking of the interlayer spacing. From the calculated binding energy curves we deduce the interlayer binding energy of GaSe, which is found to be in the range 0.172–0.197eV/layer (14.2–16.2meV/Å2).
[Display omitted]
•Effects of van der Waals interactions are analyzed using advanced density functionals.•Calculations with vdW-corrected functionals closely agree with experiment.•Interlayer binding energy of GaSe is estimated to be 14.2–16.2meV/Å2.</description><subject>Ab initio calculations</subject><subject>ACCURACY</subject><subject>BINDING ENERGY</subject><subject>Binding properties</subject><subject>BOND ANGLE</subject><subject>BOND LENGTHS</subject><subject>CRYSTAL STRUCTURE</subject><subject>CRYSTALS</subject><subject>DENSITY</subject><subject>DENSITY FUNCTIONAL METHOD</subject><subject>DISPERSIONS</subject><subject>GALLIUM SELENIDES</subject><subject>INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY</subject><subject>INTERACTIONS</subject><subject>LATTICE PARAMETERS</subject><subject>Layered semiconductors</subject><subject>LAYERS</subject><subject>MEV RANGE</subject><subject>PRESSURE DEPENDENCE</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>VAN DER WAALS FORCES</subject><issn>0022-4596</issn><issn>1095-726X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kMFKAzEQhoMoWKsv4Cngedcku5vsghcptQoFD1r0FtJkYrPUpCRpwbd3l_XsaWD4_4-ZD6FbSkpKKL_vyz4lXTJCm5J0JSHsDM0o6ZpCMP55jmbDhhV10_FLdJVSTwilTVvP0GZpLeiMg8Un5bGBiD-U2ifsfIaodHbBJxw8zjvAKcejzseo9lh5g7fOG-e_8CGGA8TsII2YlXqDa3RhBwjc_M052jwt3xfPxfp19bJ4XBe6Ym0uKKO045VhrWYdaYFbwSsgglrWCl1Xlba1bmoqrBDUqNZoIsBYSnjDhLDbao7uJm5I2cmkXQa908H74SXJWCOqjrMhxaaUjiGlCFYeovtW8UdSIkd9spejPjnqk6STg6yh9DCVYLj_5CCOePAajIsj3QT3X_0XrwV4Ow</recordid><startdate>20151201</startdate><enddate>20151201</enddate><creator>Sarkisov, Sergey Y.</creator><creator>Kosobutsky, Alexey V.</creator><creator>Shandakov, Sergey D.</creator><general>Elsevier Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20151201</creationdate><title>Effect of van der Waals interactions on the structural and binding properties of GaSe</title><author>Sarkisov, Sergey Y. ; Kosobutsky, Alexey V. ; Shandakov, Sergey D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-1211963d28c2908e6f763e071f287c433cf4c5417f771da8dc07edf1065277fb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Ab initio calculations</topic><topic>ACCURACY</topic><topic>BINDING ENERGY</topic><topic>Binding properties</topic><topic>BOND ANGLE</topic><topic>BOND LENGTHS</topic><topic>CRYSTAL STRUCTURE</topic><topic>CRYSTALS</topic><topic>DENSITY</topic><topic>DENSITY FUNCTIONAL METHOD</topic><topic>DISPERSIONS</topic><topic>GALLIUM SELENIDES</topic><topic>INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY</topic><topic>INTERACTIONS</topic><topic>LATTICE PARAMETERS</topic><topic>Layered semiconductors</topic><topic>LAYERS</topic><topic>MEV RANGE</topic><topic>PRESSURE DEPENDENCE</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>VAN DER WAALS FORCES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sarkisov, Sergey Y.</creatorcontrib><creatorcontrib>Kosobutsky, Alexey V.</creatorcontrib><creatorcontrib>Shandakov, Sergey D.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of solid state chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sarkisov, Sergey Y.</au><au>Kosobutsky, Alexey V.</au><au>Shandakov, Sergey D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of van der Waals interactions on the structural and binding properties of GaSe</atitle><jtitle>Journal of solid state chemistry</jtitle><date>2015-12-01</date><risdate>2015</risdate><volume>232</volume><spage>67</spage><epage>72</epage><pages>67-72</pages><issn>0022-4596</issn><eissn>1095-726X</eissn><abstract>The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method within density functional theory. We employed the conventional local/semilocal exchange-correlation functionals and recently developed van der Waals functionals which are able to describe dispersion forces. It is found that application of van der Waals density functionals allows to substantially increase the accuracy of calculations of the lattice constants a and c and interlayer distance in GaSe at ambient conditions and under hydrostatic pressure. The pressure dependences of the a-parameter, Ga–Ga, Ga–Se bond lengths and Ga–Ga–Se bond angle are characterized by a relatively low curvature, while c(p) has a distinct downward bowing due to nonlinear shrinking of the interlayer spacing. From the calculated binding energy curves we deduce the interlayer binding energy of GaSe, which is found to be in the range 0.172–0.197eV/layer (14.2–16.2meV/Å2).
[Display omitted]
•Effects of van der Waals interactions are analyzed using advanced density functionals.•Calculations with vdW-corrected functionals closely agree with experiment.•Interlayer binding energy of GaSe is estimated to be 14.2–16.2meV/Å2.</abstract><cop>United States</cop><pub>Elsevier Inc</pub><doi>10.1016/j.jssc.2015.09.002</doi><tpages>6</tpages></addata></record> |
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subjects | Ab initio calculations ACCURACY BINDING ENERGY Binding properties BOND ANGLE BOND LENGTHS CRYSTAL STRUCTURE CRYSTALS DENSITY DENSITY FUNCTIONAL METHOD DISPERSIONS GALLIUM SELENIDES INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY INTERACTIONS LATTICE PARAMETERS Layered semiconductors LAYERS MEV RANGE PRESSURE DEPENDENCE SEMICONDUCTOR MATERIALS VAN DER WAALS FORCES |
title | Effect of van der Waals interactions on the structural and binding properties of GaSe |
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