Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy

The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being aff...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2015-08, Vol.118 (5)
Hauptverfasser: Kimura, Tomoharu, Kobayashi, Kei, Yamada, Hirofumi
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 5
container_start_page
container_title Journal of applied physics
container_volume 118
creator Kimura, Tomoharu
Kobayashi, Kei
Yamada, Hirofumi
description The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.
doi_str_mv 10.1063/1.4927921
format Article
fullrecord <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22494710</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124101611</sourcerecordid><originalsourceid>FETCH-LOGICAL-c351t-2c8c05e072d43776bb29187f0a31dd0be2ae9e3e08ded14443aa7eebb56a42313</originalsourceid><addsrcrecordid>eNpNkT9PwzAQxS0EEqUw8A0sMTGE-mynjkdU8U-qxAKz5TiX4iqxg50OXfnkpGolmE66e_fufnqE3AJ7ALYUC3iQmivN4YzMgFW6UGXJzsmMMQ5FpZW-JFc5bxkDqISekZ91dLajvh-wscEh7dHmXcIew0hjS22g2KEbU2xwkX3YdFgM08w6DFhskvWB-jBiaqcOrfe0Tfi9w-D2RR-bXWdHHwPNzoYwLf-_412K2cVhf00uWttlvDnVOfl8fvpYvRbr95e31eO6cKKEseCucqxEpngjhVLLuuYaKtUyK6BpWI3cokaBrGqwASmlsFYh1nW5tJILEHNyd_SNefQmOz-i-3IxhAnPcC61VMD-VEOKE0gezTbuUpgeMxy4BAZLOHjdH1UHiJywNUPyvU17A8wcgjBgTkGIXz4JfLw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124101611</pqid></control><display><type>article</type><title>Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Kimura, Tomoharu ; Kobayashi, Kei ; Yamada, Hirofumi</creator><creatorcontrib>Kimura, Tomoharu ; Kobayashi, Kei ; Yamada, Hirofumi</creatorcontrib><description>The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4927921</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; ATOMIC FORCE MICROSCOPY ; CAPACITANCE ; Carrier injection ; CARRIERS ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Contact resistance ; ELECTRIC POTENTIAL ; ELECTRODES ; ENERGY LEVELS ; FREQUENCY MODULATION ; IMPEDANCE ; Impedance measurement ; INTERFACES ; METALS ; Microscopy ; MORPHOLOGY ; ORGANIC MATTER ; PENTACENE ; Reduction ; Semiconductor devices ; Thin film transistors ; THIN FILMS ; TRANSISTORS ; Voltage drop</subject><ispartof>Journal of applied physics, 2015-08, Vol.118 (5)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-2c8c05e072d43776bb29187f0a31dd0be2ae9e3e08ded14443aa7eebb56a42313</citedby><cites>FETCH-LOGICAL-c351t-2c8c05e072d43776bb29187f0a31dd0be2ae9e3e08ded14443aa7eebb56a42313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22494710$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kimura, Tomoharu</creatorcontrib><creatorcontrib>Kobayashi, Kei</creatorcontrib><creatorcontrib>Yamada, Hirofumi</creatorcontrib><title>Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy</title><title>Journal of applied physics</title><description>The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.</description><subject>Applied physics</subject><subject>ATOMIC FORCE MICROSCOPY</subject><subject>CAPACITANCE</subject><subject>Carrier injection</subject><subject>CARRIERS</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Contact resistance</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTRODES</subject><subject>ENERGY LEVELS</subject><subject>FREQUENCY MODULATION</subject><subject>IMPEDANCE</subject><subject>Impedance measurement</subject><subject>INTERFACES</subject><subject>METALS</subject><subject>Microscopy</subject><subject>MORPHOLOGY</subject><subject>ORGANIC MATTER</subject><subject>PENTACENE</subject><subject>Reduction</subject><subject>Semiconductor devices</subject><subject>Thin film transistors</subject><subject>THIN FILMS</subject><subject>TRANSISTORS</subject><subject>Voltage drop</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpNkT9PwzAQxS0EEqUw8A0sMTGE-mynjkdU8U-qxAKz5TiX4iqxg50OXfnkpGolmE66e_fufnqE3AJ7ALYUC3iQmivN4YzMgFW6UGXJzsmMMQ5FpZW-JFc5bxkDqISekZ91dLajvh-wscEh7dHmXcIew0hjS22g2KEbU2xwkX3YdFgM08w6DFhskvWB-jBiaqcOrfe0Tfi9w-D2RR-bXWdHHwPNzoYwLf-_412K2cVhf00uWttlvDnVOfl8fvpYvRbr95e31eO6cKKEseCucqxEpngjhVLLuuYaKtUyK6BpWI3cokaBrGqwASmlsFYh1nW5tJILEHNyd_SNefQmOz-i-3IxhAnPcC61VMD-VEOKE0gezTbuUpgeMxy4BAZLOHjdH1UHiJywNUPyvU17A8wcgjBgTkGIXz4JfLw</recordid><startdate>20150807</startdate><enddate>20150807</enddate><creator>Kimura, Tomoharu</creator><creator>Kobayashi, Kei</creator><creator>Yamada, Hirofumi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20150807</creationdate><title>Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy</title><author>Kimura, Tomoharu ; Kobayashi, Kei ; Yamada, Hirofumi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-2c8c05e072d43776bb29187f0a31dd0be2ae9e3e08ded14443aa7eebb56a42313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>ATOMIC FORCE MICROSCOPY</topic><topic>CAPACITANCE</topic><topic>Carrier injection</topic><topic>CARRIERS</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>Contact resistance</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTRODES</topic><topic>ENERGY LEVELS</topic><topic>FREQUENCY MODULATION</topic><topic>IMPEDANCE</topic><topic>Impedance measurement</topic><topic>INTERFACES</topic><topic>METALS</topic><topic>Microscopy</topic><topic>MORPHOLOGY</topic><topic>ORGANIC MATTER</topic><topic>PENTACENE</topic><topic>Reduction</topic><topic>Semiconductor devices</topic><topic>Thin film transistors</topic><topic>THIN FILMS</topic><topic>TRANSISTORS</topic><topic>Voltage drop</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kimura, Tomoharu</creatorcontrib><creatorcontrib>Kobayashi, Kei</creatorcontrib><creatorcontrib>Yamada, Hirofumi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kimura, Tomoharu</au><au>Kobayashi, Kei</au><au>Yamada, Hirofumi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy</atitle><jtitle>Journal of applied physics</jtitle><date>2015-08-07</date><risdate>2015</risdate><volume>118</volume><issue>5</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4927921</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2015-08, Vol.118 (5)
issn 0021-8979
1089-7550
language eng
recordid cdi_osti_scitechconnect_22494710
source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
ATOMIC FORCE MICROSCOPY
CAPACITANCE
Carrier injection
CARRIERS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Contact resistance
ELECTRIC POTENTIAL
ELECTRODES
ENERGY LEVELS
FREQUENCY MODULATION
IMPEDANCE
Impedance measurement
INTERFACES
METALS
Microscopy
MORPHOLOGY
ORGANIC MATTER
PENTACENE
Reduction
Semiconductor devices
Thin film transistors
THIN FILMS
TRANSISTORS
Voltage drop
title Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T20%3A20%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Local%20impedance%20measurement%20of%20an%20electrode/single-pentacene-grain%20interface%20by%20frequency-modulation%20scanning%20impedance%20microscopy&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Kimura,%20Tomoharu&rft.date=2015-08-07&rft.volume=118&rft.issue=5&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4927921&rft_dat=%3Cproquest_osti_%3E2124101611%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2124101611&rft_id=info:pmid/&rfr_iscdi=true