Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy
The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being aff...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2015-08, Vol.118 (5) |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 5 |
container_start_page | |
container_title | Journal of applied physics |
container_volume | 118 |
creator | Kimura, Tomoharu Kobayashi, Kei Yamada, Hirofumi |
description | The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology. |
doi_str_mv | 10.1063/1.4927921 |
format | Article |
fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22494710</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124101611</sourcerecordid><originalsourceid>FETCH-LOGICAL-c351t-2c8c05e072d43776bb29187f0a31dd0be2ae9e3e08ded14443aa7eebb56a42313</originalsourceid><addsrcrecordid>eNpNkT9PwzAQxS0EEqUw8A0sMTGE-mynjkdU8U-qxAKz5TiX4iqxg50OXfnkpGolmE66e_fufnqE3AJ7ALYUC3iQmivN4YzMgFW6UGXJzsmMMQ5FpZW-JFc5bxkDqISekZ91dLajvh-wscEh7dHmXcIew0hjS22g2KEbU2xwkX3YdFgM08w6DFhskvWB-jBiaqcOrfe0Tfi9w-D2RR-bXWdHHwPNzoYwLf-_412K2cVhf00uWttlvDnVOfl8fvpYvRbr95e31eO6cKKEseCucqxEpngjhVLLuuYaKtUyK6BpWI3cokaBrGqwASmlsFYh1nW5tJILEHNyd_SNefQmOz-i-3IxhAnPcC61VMD-VEOKE0gezTbuUpgeMxy4BAZLOHjdH1UHiJywNUPyvU17A8wcgjBgTkGIXz4JfLw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124101611</pqid></control><display><type>article</type><title>Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Kimura, Tomoharu ; Kobayashi, Kei ; Yamada, Hirofumi</creator><creatorcontrib>Kimura, Tomoharu ; Kobayashi, Kei ; Yamada, Hirofumi</creatorcontrib><description>The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4927921</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; ATOMIC FORCE MICROSCOPY ; CAPACITANCE ; Carrier injection ; CARRIERS ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Contact resistance ; ELECTRIC POTENTIAL ; ELECTRODES ; ENERGY LEVELS ; FREQUENCY MODULATION ; IMPEDANCE ; Impedance measurement ; INTERFACES ; METALS ; Microscopy ; MORPHOLOGY ; ORGANIC MATTER ; PENTACENE ; Reduction ; Semiconductor devices ; Thin film transistors ; THIN FILMS ; TRANSISTORS ; Voltage drop</subject><ispartof>Journal of applied physics, 2015-08, Vol.118 (5)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-2c8c05e072d43776bb29187f0a31dd0be2ae9e3e08ded14443aa7eebb56a42313</citedby><cites>FETCH-LOGICAL-c351t-2c8c05e072d43776bb29187f0a31dd0be2ae9e3e08ded14443aa7eebb56a42313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22494710$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kimura, Tomoharu</creatorcontrib><creatorcontrib>Kobayashi, Kei</creatorcontrib><creatorcontrib>Yamada, Hirofumi</creatorcontrib><title>Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy</title><title>Journal of applied physics</title><description>The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.</description><subject>Applied physics</subject><subject>ATOMIC FORCE MICROSCOPY</subject><subject>CAPACITANCE</subject><subject>Carrier injection</subject><subject>CARRIERS</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Contact resistance</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTRODES</subject><subject>ENERGY LEVELS</subject><subject>FREQUENCY MODULATION</subject><subject>IMPEDANCE</subject><subject>Impedance measurement</subject><subject>INTERFACES</subject><subject>METALS</subject><subject>Microscopy</subject><subject>MORPHOLOGY</subject><subject>ORGANIC MATTER</subject><subject>PENTACENE</subject><subject>Reduction</subject><subject>Semiconductor devices</subject><subject>Thin film transistors</subject><subject>THIN FILMS</subject><subject>TRANSISTORS</subject><subject>Voltage drop</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpNkT9PwzAQxS0EEqUw8A0sMTGE-mynjkdU8U-qxAKz5TiX4iqxg50OXfnkpGolmE66e_fufnqE3AJ7ALYUC3iQmivN4YzMgFW6UGXJzsmMMQ5FpZW-JFc5bxkDqISekZ91dLajvh-wscEh7dHmXcIew0hjS22g2KEbU2xwkX3YdFgM08w6DFhskvWB-jBiaqcOrfe0Tfi9w-D2RR-bXWdHHwPNzoYwLf-_412K2cVhf00uWttlvDnVOfl8fvpYvRbr95e31eO6cKKEseCucqxEpngjhVLLuuYaKtUyK6BpWI3cokaBrGqwASmlsFYh1nW5tJILEHNyd_SNefQmOz-i-3IxhAnPcC61VMD-VEOKE0gezTbuUpgeMxy4BAZLOHjdH1UHiJywNUPyvU17A8wcgjBgTkGIXz4JfLw</recordid><startdate>20150807</startdate><enddate>20150807</enddate><creator>Kimura, Tomoharu</creator><creator>Kobayashi, Kei</creator><creator>Yamada, Hirofumi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20150807</creationdate><title>Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy</title><author>Kimura, Tomoharu ; Kobayashi, Kei ; Yamada, Hirofumi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-2c8c05e072d43776bb29187f0a31dd0be2ae9e3e08ded14443aa7eebb56a42313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>ATOMIC FORCE MICROSCOPY</topic><topic>CAPACITANCE</topic><topic>Carrier injection</topic><topic>CARRIERS</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>Contact resistance</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTRODES</topic><topic>ENERGY LEVELS</topic><topic>FREQUENCY MODULATION</topic><topic>IMPEDANCE</topic><topic>Impedance measurement</topic><topic>INTERFACES</topic><topic>METALS</topic><topic>Microscopy</topic><topic>MORPHOLOGY</topic><topic>ORGANIC MATTER</topic><topic>PENTACENE</topic><topic>Reduction</topic><topic>Semiconductor devices</topic><topic>Thin film transistors</topic><topic>THIN FILMS</topic><topic>TRANSISTORS</topic><topic>Voltage drop</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kimura, Tomoharu</creatorcontrib><creatorcontrib>Kobayashi, Kei</creatorcontrib><creatorcontrib>Yamada, Hirofumi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kimura, Tomoharu</au><au>Kobayashi, Kei</au><au>Yamada, Hirofumi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy</atitle><jtitle>Journal of applied physics</jtitle><date>2015-08-07</date><risdate>2015</risdate><volume>118</volume><issue>5</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4927921</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-8979 |
ispartof | Journal of applied physics, 2015-08, Vol.118 (5) |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_osti_scitechconnect_22494710 |
source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | Applied physics ATOMIC FORCE MICROSCOPY CAPACITANCE Carrier injection CARRIERS CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Contact resistance ELECTRIC POTENTIAL ELECTRODES ENERGY LEVELS FREQUENCY MODULATION IMPEDANCE Impedance measurement INTERFACES METALS Microscopy MORPHOLOGY ORGANIC MATTER PENTACENE Reduction Semiconductor devices Thin film transistors THIN FILMS TRANSISTORS Voltage drop |
title | Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T20%3A20%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Local%20impedance%20measurement%20of%20an%20electrode/single-pentacene-grain%20interface%20by%20frequency-modulation%20scanning%20impedance%20microscopy&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Kimura,%20Tomoharu&rft.date=2015-08-07&rft.volume=118&rft.issue=5&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4927921&rft_dat=%3Cproquest_osti_%3E2124101611%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2124101611&rft_id=info:pmid/&rfr_iscdi=true |