Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates...

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Veröffentlicht in:	Journal of applied physics 2015-07, Vol.118 (4)
Hauptverfasser:	Brennan, Christopher J., Neumann, Christopher M., Vitale, Steven A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic layer epitaxy CAPACITANCE CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Current leakage DAMAGE DEFECTS DEPOSITION DIELECTRIC MATERIALS ELECTRIC POTENTIAL Electrical measurement Electrons ELECTROSTATICS FAR ULTRAVIOLET RADIATION Gates LEAKAGE CURRENT MAGNETRONS MATERIALS SCIENCE OXIDES Photons PLASMA Reduction Semiconductor devices SILICON SPUTTERING TAIL IONS TITANIUM NITRIDES TRANSISTORS
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