Electrostatic analysis of n-doped SrTiO{sub 3} metal-insulator-semiconductor systems

Electron doped SrTiO{sub 3}, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO{sub 3} systems show reasonably strong rectification even when SrTiO{sub 3} is degener...

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Veröffentlicht in:	Journal of applied physics 2015-12, Vol.118 (22)
Hauptverfasser:	Kamerbeek, A. M., Banerjee, T., Hueting, R. J. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DOPED MATERIALS ELECTRIC FIELDS ELECTRICAL INSULATORS ELECTROSTATICS METALS NONLINEAR PROBLEMS PERMITTIVITY SCHOTTKY BARRIER DIODES SEMICONDUCTOR MATERIALS STRONTIUM TITANATES SURFACE POTENTIAL TEMPERATURE DEPENDENCE
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