A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 101...

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Veröffentlicht in:	Journal of applied physics 2015-11, Vol.118 (18)
Hauptverfasser:	Nyamhere, C., Scheinemann, A., Schenk, A., Scheit, A., Olivie, F., Cristiano, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANNEALING Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Computer simulation Condensed Matter DEEP LEVEL TRANSIENT SPECTROSCOPY Defect annealing DEFECTS Dependence Dislocation loops DISLOCATIONS Electrical junctions ELECTRICAL PROPERTIES ENERGY LEVELS Engineering Sciences Germanium Hole traps HOLES Implantation LEAKAGE CURRENT Materials Materials Science Mathematical models Micro and nanotechnologies Microelectronics Parameters Physics SILICON SIMULATION Surface mount technology TRAPS
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