Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

We have measured and analyzed the carrier-density dependence of photoluminescence (PL) spectra and the PL efficiency of InGaN/GaN multiple quantum wells in nanocolumns and in a thin film over a wide excitation range. The localized states parameters, such as the tailing parameter, density and size of...

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Veröffentlicht in:	Journal of applied physics 2015-11, Vol.118 (17)
Hauptverfasser:	Shimosako, N., Inose, Y., Satoh, H., Kinjo, K., Nakaoka, T., Oto, T., Kishino, K., Ema, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CARRIER DENSITY CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Dependence EFFICIENCY GALLIUM NITRIDES MOBILITY Parameters PHOTOLUMINESCENCE QUANTUM WELLS SPECTRA TAILINGS THIN FILMS
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