Hole injection from the sidewall of V-shaped pits into c -plane multiple quantum wells in InGaN light emitting diodes
The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reach...
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| Veröffentlicht in: | Journal of applied physics 2015-10, Vol.118 (16) |
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| container_title | Journal of applied physics |
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| creator | Wu, Xiaoming Liu, Junlin Jiang, Fengyi |
| description | The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs. |
| doi_str_mv | 10.1063/1.4934503 |
| format | Article |
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Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4934503</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CARRIERS ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; DISLOCATIONS ; GALLIUM NITRIDES ; HOLES ; Indium gallium nitrides ; LIGHT EMITTING DIODES ; Organic light emitting diodes ; Pits ; QUANTUM WELLS ; SPECTROSCOPY ; WAVELENGTHS</subject><ispartof>Journal of applied physics, 2015-10, Vol.118 (16)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-6837d2ef3904912936ef7fabea42cdcb5ffcb1213803284759727058710d310d3</citedby><cites>FETCH-LOGICAL-c285t-6837d2ef3904912936ef7fabea42cdcb5ffcb1213803284759727058710d310d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22492863$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Wu, Xiaoming</creatorcontrib><creatorcontrib>Liu, Junlin</creatorcontrib><creatorcontrib>Jiang, Fengyi</creatorcontrib><title>Hole injection from the sidewall of V-shaped pits into c -plane multiple quantum wells in InGaN light emitting diodes</title><title>Journal of applied physics</title><description>The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs.</description><subject>Applied physics</subject><subject>CARRIERS</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>DISLOCATIONS</subject><subject>GALLIUM NITRIDES</subject><subject>HOLES</subject><subject>Indium gallium nitrides</subject><subject>LIGHT EMITTING DIODES</subject><subject>Organic light emitting diodes</subject><subject>Pits</subject><subject>QUANTUM WELLS</subject><subject>SPECTROSCOPY</subject><subject>WAVELENGTHS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpF0M1KAzEUBeAgCtbqwjcIuHIxNT8zk2QpRdtC0Y26DWkmaVMyyXSSofj2TmnBxeVuPg73HgAeMZphVNMXPCsFLStEr8AEIy4KVlXoGkwQIrjggolbcJfSHiGMORUTMCyjN9CFvdHZxQBtH1uYdwYm15ij8h5GC3-KtFOdaWDnchpxjlDDovMqGNgOPrtuzDgMKuShhUfj_QnBVVioD-jddpehaV3OLmxh42Jj0j24scon83DZU_D9_vY1Xxbrz8Vq_rouNOFVLmpOWUOMpQKVAhNBa2OZVRujSqIbvams1RtMMOWIEl6ySjDCUMUZRg09zRQ8nXNjyk4m7bLROx1DGL-VhJSC8Jr-q66Ph8GkLPdx6MN4mCSYUF4KVpejej4r3ceUemNl17tW9b8SI3nqXmJ56Z7-AUn9dM4</recordid><startdate>20151028</startdate><enddate>20151028</enddate><creator>Wu, Xiaoming</creator><creator>Liu, Junlin</creator><creator>Jiang, Fengyi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20151028</creationdate><title>Hole injection from the sidewall of V-shaped pits into c -plane multiple quantum wells in InGaN light emitting diodes</title><author>Wu, Xiaoming ; Liu, Junlin ; Jiang, Fengyi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-6837d2ef3904912936ef7fabea42cdcb5ffcb1213803284759727058710d310d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>CARRIERS</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>DISLOCATIONS</topic><topic>GALLIUM NITRIDES</topic><topic>HOLES</topic><topic>Indium gallium nitrides</topic><topic>LIGHT EMITTING DIODES</topic><topic>Organic light emitting diodes</topic><topic>Pits</topic><topic>QUANTUM WELLS</topic><topic>SPECTROSCOPY</topic><topic>WAVELENGTHS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Xiaoming</creatorcontrib><creatorcontrib>Liu, Junlin</creatorcontrib><creatorcontrib>Jiang, Fengyi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Xiaoming</au><au>Liu, Junlin</au><au>Jiang, Fengyi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hole injection from the sidewall of V-shaped pits into c -plane multiple quantum wells in InGaN light emitting diodes</atitle><jtitle>Journal of applied physics</jtitle><date>2015-10-28</date><risdate>2015</risdate><volume>118</volume><issue>16</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4934503</doi></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics CARRIERS CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DISLOCATIONS GALLIUM NITRIDES HOLES Indium gallium nitrides LIGHT EMITTING DIODES Organic light emitting diodes Pits QUANTUM WELLS SPECTROSCOPY WAVELENGTHS |
| title | Hole injection from the sidewall of V-shaped pits into c -plane multiple quantum wells in InGaN light emitting diodes |
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