Effect of low-damage inductively coupled plasma on shallow nitrogen-vacancy centers in diamond
Near-surface nitrogen-vacancy (NV) centers in diamond have been successfully employed as atomic-sized magnetic field sensors for external spins over the last years. A key challenge is still to develop a method to bring NV centers at nanometer proximity to the diamond surface while preserving their o...
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| Veröffentlicht in: | Applied physics letters 2015-08, Vol.107 (7) |
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| container_title | Applied physics letters |
| container_volume | 107 |
| creator | Fávaro de Oliveira, Felipe Momenzadeh, S. Ali Wang, Ya Konuma, Mitsuharu Markham, Matthew Edmonds, Andrew M. Denisenko, Andrej Wrachtrup, Jörg |
| description | Near-surface nitrogen-vacancy (NV) centers in diamond have been successfully employed as atomic-sized magnetic field sensors for external spins over the last years. A key challenge is still to develop a method to bring NV centers at nanometer proximity to the diamond surface while preserving their optical and spin properties. To that aim we present a method of controlled diamond etching with nanometric precision using an oxygen inductively coupled plasma process. Importantly, no traces of plasma-induced damages to the etched surface could be detected by X-ray photoelectron spectroscopy and confocal photoluminescence microscopy techniques. In addition, by profiling the depth of NV centers created by 5.0 keV of nitrogen implantation energy, no plasma-induced quenching in their fluorescence could be observed. Moreover, the developed etching process allowed even the channeling tail in their depth distribution to be resolved. Furthermore, treating a 12C isotopically purified diamond revealed a threefold increase in T2 times for NV centers with |
| doi_str_mv | 10.1063/1.4929356 |
| format | Article |
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Ali ; Wang, Ya ; Konuma, Mitsuharu ; Markham, Matthew ; Edmonds, Andrew M. ; Denisenko, Andrej ; Wrachtrup, Jörg</creator><creatorcontrib>Fávaro de Oliveira, Felipe ; Momenzadeh, S. Ali ; Wang, Ya ; Konuma, Mitsuharu ; Markham, Matthew ; Edmonds, Andrew M. ; Denisenko, Andrej ; Wrachtrup, Jörg</creatorcontrib><description>Near-surface nitrogen-vacancy (NV) centers in diamond have been successfully employed as atomic-sized magnetic field sensors for external spins over the last years. A key challenge is still to develop a method to bring NV centers at nanometer proximity to the diamond surface while preserving their optical and spin properties. To that aim we present a method of controlled diamond etching with nanometric precision using an oxygen inductively coupled plasma process. Importantly, no traces of plasma-induced damages to the etched surface could be detected by X-ray photoelectron spectroscopy and confocal photoluminescence microscopy techniques. In addition, by profiling the depth of NV centers created by 5.0 keV of nitrogen implantation energy, no plasma-induced quenching in their fluorescence could be observed. Moreover, the developed etching process allowed even the channeling tail in their depth distribution to be resolved. Furthermore, treating a 12C isotopically purified diamond revealed a threefold increase in T2 times for NV centers with <4 nm of depth (measured by nuclear magnetic resonance signal from protons at the diamond surface) in comparison to the initial oxygen-terminated surface.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4929356</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CARBON 12 ; CHANNELING ; COMPARATIVE EVALUATIONS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DIAMONDS ; ETCHING ; FLUORESCENCE ; Implantation ; Inductively coupled plasma ; KEV RANGE 01-10 ; MAGNETIC FIELDS ; MICROSCOPY ; NANOSTRUCTURES ; NITROGEN ; NMR ; NUCLEAR MAGNETIC RESONANCE ; Optical properties ; OXYGEN ; PHOTOLUMINESCENCE ; PROTONS ; QUENCHING ; SENSORS ; SPATIAL DISTRIBUTION ; VACANCIES ; X-RAY PHOTOELECTRON SPECTROSCOPY</subject><ispartof>Applied physics letters, 2015-08, Vol.107 (7)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-a7303d713967fd6bf46642a102fe52f56319538622add8f55f428454d994c6eb3</citedby><cites>FETCH-LOGICAL-c351t-a7303d713967fd6bf46642a102fe52f56319538622add8f55f428454d994c6eb3</cites><orcidid>0000-0002-6220-889X ; 0000-0003-0554-8975</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22492701$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Fávaro de Oliveira, Felipe</creatorcontrib><creatorcontrib>Momenzadeh, S. Ali</creatorcontrib><creatorcontrib>Wang, Ya</creatorcontrib><creatorcontrib>Konuma, Mitsuharu</creatorcontrib><creatorcontrib>Markham, Matthew</creatorcontrib><creatorcontrib>Edmonds, Andrew M.</creatorcontrib><creatorcontrib>Denisenko, Andrej</creatorcontrib><creatorcontrib>Wrachtrup, Jörg</creatorcontrib><title>Effect of low-damage inductively coupled plasma on shallow nitrogen-vacancy centers in diamond</title><title>Applied physics letters</title><description>Near-surface nitrogen-vacancy (NV) centers in diamond have been successfully employed as atomic-sized magnetic field sensors for external spins over the last years. A key challenge is still to develop a method to bring NV centers at nanometer proximity to the diamond surface while preserving their optical and spin properties. To that aim we present a method of controlled diamond etching with nanometric precision using an oxygen inductively coupled plasma process. Importantly, no traces of plasma-induced damages to the etched surface could be detected by X-ray photoelectron spectroscopy and confocal photoluminescence microscopy techniques. In addition, by profiling the depth of NV centers created by 5.0 keV of nitrogen implantation energy, no plasma-induced quenching in their fluorescence could be observed. Moreover, the developed etching process allowed even the channeling tail in their depth distribution to be resolved. Furthermore, treating a 12C isotopically purified diamond revealed a threefold increase in T2 times for NV centers with <4 nm of depth (measured by nuclear magnetic resonance signal from protons at the diamond surface) in comparison to the initial oxygen-terminated surface.</description><subject>Applied physics</subject><subject>CARBON 12</subject><subject>CHANNELING</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DIAMONDS</subject><subject>ETCHING</subject><subject>FLUORESCENCE</subject><subject>Implantation</subject><subject>Inductively coupled plasma</subject><subject>KEV RANGE 01-10</subject><subject>MAGNETIC FIELDS</subject><subject>MICROSCOPY</subject><subject>NANOSTRUCTURES</subject><subject>NITROGEN</subject><subject>NMR</subject><subject>NUCLEAR MAGNETIC RESONANCE</subject><subject>Optical properties</subject><subject>OXYGEN</subject><subject>PHOTOLUMINESCENCE</subject><subject>PROTONS</subject><subject>QUENCHING</subject><subject>SENSORS</subject><subject>SPATIAL DISTRIBUTION</subject><subject>VACANCIES</subject><subject>X-RAY PHOTOELECTRON SPECTROSCOPY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpFkMtKAzEUhoMoWKsL3yDgysVoTm4zs5RSL1Bwo1tDmks7ZSYZJ5lK396RFlwdfvjO4T8fQrdAHoBI9ggPvKY1E_IMzYCUZcEAqnM0I4SwQtYCLtFVSrspCsrYDH0tvXcm4-hxG38Kqzu9cbgJdjS52bv2gE0c-9ZZ3Lc6dRrHgNNWtxOMQ5OHuHGh2Gujg5lQF7Ib0rSObaO7GOw1uvC6Te7mNOfo83n5sXgtVu8vb4unVWGYgFzokhFmS2C1LL2Va8-l5FQDod4J6oVkUAtWSUq1tZUXwnNaccFtXXMj3ZrN0d3xbky5Uck02ZmtiSFMvylKJyclgX-qH-L36FJWuzgOYSqmKFAOhAPUE3V_pMwQUxqcV_3QdHo4KCDqT7ICdZLMfgEwQm0R</recordid><startdate>20150817</startdate><enddate>20150817</enddate><creator>Fávaro de Oliveira, Felipe</creator><creator>Momenzadeh, S. 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Ali</au><au>Wang, Ya</au><au>Konuma, Mitsuharu</au><au>Markham, Matthew</au><au>Edmonds, Andrew M.</au><au>Denisenko, Andrej</au><au>Wrachtrup, Jörg</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of low-damage inductively coupled plasma on shallow nitrogen-vacancy centers in diamond</atitle><jtitle>Applied physics letters</jtitle><date>2015-08-17</date><risdate>2015</risdate><volume>107</volume><issue>7</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Near-surface nitrogen-vacancy (NV) centers in diamond have been successfully employed as atomic-sized magnetic field sensors for external spins over the last years. A key challenge is still to develop a method to bring NV centers at nanometer proximity to the diamond surface while preserving their optical and spin properties. To that aim we present a method of controlled diamond etching with nanometric precision using an oxygen inductively coupled plasma process. Importantly, no traces of plasma-induced damages to the etched surface could be detected by X-ray photoelectron spectroscopy and confocal photoluminescence microscopy techniques. In addition, by profiling the depth of NV centers created by 5.0 keV of nitrogen implantation energy, no plasma-induced quenching in their fluorescence could be observed. Moreover, the developed etching process allowed even the channeling tail in their depth distribution to be resolved. Furthermore, treating a 12C isotopically purified diamond revealed a threefold increase in T2 times for NV centers with <4 nm of depth (measured by nuclear magnetic resonance signal from protons at the diamond surface) in comparison to the initial oxygen-terminated surface.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4929356</doi><orcidid>https://orcid.org/0000-0002-6220-889X</orcidid><orcidid>https://orcid.org/0000-0003-0554-8975</orcidid></addata></record> |
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| subjects | Applied physics CARBON 12 CHANNELING COMPARATIVE EVALUATIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DIAMONDS ETCHING FLUORESCENCE Implantation Inductively coupled plasma KEV RANGE 01-10 MAGNETIC FIELDS MICROSCOPY NANOSTRUCTURES NITROGEN NMR NUCLEAR MAGNETIC RESONANCE Optical properties OXYGEN PHOTOLUMINESCENCE PROTONS QUENCHING SENSORS SPATIAL DISTRIBUTION VACANCIES X-RAY PHOTOELECTRON SPECTROSCOPY |
| title | Effect of low-damage inductively coupled plasma on shallow nitrogen-vacancy centers in diamond |
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