Post-growth annealing of germanium-tin alloys using pulsed excimer laser

We investigate the impact of pulsed excimer laser anneal on fully strained germanium-tin alloys (Ge1−xSnx) epitaxially grown on Ge substrate by molecular beam epitaxy. Using atomic force microscopy, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, the morpho...

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Veröffentlicht in:	Journal of applied physics 2015-07, Vol.118 (2)
Hauptverfasser:	Wang, Lanxiang, Wang, Wei, Zhou, Qian, Pan, Jisheng, Zhang, Zheng, Tok, Eng Soon, Yeo, Yee-Chia
Format:	Artikel
Sprache:	eng
Schlagworte:	ANNEALING Applied physics ATOMIC FORCE MICROSCOPY CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Epitaxial growth EXCIMER LASERS Excimers GERMANIUM Islands Microscopy MOLECULAR BEAM EPITAXY PULSES SEGREGATION SUBSTRATES SURFACES Thermal stability Tin TIN ALLOYS Tin base alloys TRANSMISSION ELECTRON MICROSCOPY X-RAY DIFFRACTION X-RAY PHOTOELECTRON SPECTROSCOPY
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