Deposition and characterization of diamond thin films by HF-CVD method
Effect of reactor pressure and methane gas concentration on the growth of diamond films on Si (100) substrate by hot filament chemical vapor deposition (HFCVD) method has been studied in this work. Raman spectroscopy measurements of the obtained film confirmed the formation of a mixture of micro and...
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| creator | Mishra, S. C. Choudhary, R. K. Mishra, P. Abraham, G. J. |
| description | Effect of reactor pressure and methane gas concentration on the growth of diamond films on Si (100) substrate by hot filament chemical vapor deposition (HFCVD) method has been studied in this work. Raman spectroscopy measurements of the obtained film confirmed the formation of a mixture of micro and nanocrystalline diamond by showing peaks at 1140 and 1334 cm−1 wave shifts. Scanning electron microscopy results showed formation of well defined faceted diamond grains of 100–500 nm size. Average roughness of the films measured by a surface profilometer was in the range of 40–60 nm. |
| doi_str_mv | 10.1063/1.4917964 |
| format | Conference Proceeding |
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C. ; Choudhary, R. K. ; Mishra, P. ; Abraham, G. J.</creator><creatorcontrib>Mishra, S. C. ; Choudhary, R. K. ; Mishra, P. ; Abraham, G. J.</creatorcontrib><description>Effect of reactor pressure and methane gas concentration on the growth of diamond films on Si (100) substrate by hot filament chemical vapor deposition (HFCVD) method has been studied in this work. Raman spectroscopy measurements of the obtained film confirmed the formation of a mixture of micro and nanocrystalline diamond by showing peaks at 1140 and 1334 cm−1 wave shifts. Scanning electron microscopy results showed formation of well defined faceted diamond grains of 100–500 nm size. 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C.</creatorcontrib><creatorcontrib>Choudhary, R. K.</creatorcontrib><creatorcontrib>Mishra, P.</creatorcontrib><creatorcontrib>Abraham, G. J.</creatorcontrib><title>Deposition and characterization of diamond thin films by HF-CVD method</title><title>AIP Conference Proceedings</title><description>Effect of reactor pressure and methane gas concentration on the growth of diamond films on Si (100) substrate by hot filament chemical vapor deposition (HFCVD) method has been studied in this work. Raman spectroscopy measurements of the obtained film confirmed the formation of a mixture of micro and nanocrystalline diamond by showing peaks at 1140 and 1334 cm−1 wave shifts. Scanning electron microscopy results showed formation of well defined faceted diamond grains of 100–500 nm size. Average roughness of the films measured by a surface profilometer was in the range of 40–60 nm.</description><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CONCENTRATION RATIO</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL GROWTH</subject><subject>CRYSTAL STRUCTURE</subject><subject>CRYSTALS</subject><subject>Diamond films</subject><subject>DIAMONDS</subject><subject>METHANE</subject><subject>NANOSTRUCTURES</subject><subject>Organic chemistry</subject><subject>PRESSURE DEPENDENCE</subject><subject>Pressure effects</subject><subject>RAMAN SPECTROSCOPY</subject><subject>ROUGHNESS</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>Silicon substrates</subject><subject>SUBSTRATES</subject><subject>SURFACES</subject><subject>THIN FILMS</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2015</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNpFjk1LAzEURYMoWKsL_0HA9dS8fGcprVWh4EbF3ZDJvGFS2kmdpAv99Q4quLpw7-FyCLkGtgCmxS0spAPjtDwhM1AKKqNBn5IZY05WXIr3c3KR85Yx7oyxM7Je4SHlWGIaqB9aGno_-lBwjF_-p0wdbaPfp2krfRxoF3f7TJtP-riulm8rusfSp_aSnHV-l_HqL-fkdX3_snysNs8PT8u7TZU4QKlCC17oELT1SiktsA0t13ZScVK6hqEDdN6hxM6BbZTREhvljeV-8lVWzMnN72_KJdY5xIKhD2kYMJSac-mY5OKfOozp44i51Nt0HIdJrObApRHMaiO-AUbyVwE</recordid><startdate>20150624</startdate><enddate>20150624</enddate><creator>Mishra, S. C.</creator><creator>Choudhary, R. K.</creator><creator>Mishra, P.</creator><creator>Abraham, G. J.</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20150624</creationdate><title>Deposition and characterization of diamond thin films by HF-CVD method</title><author>Mishra, S. C. ; Choudhary, R. K. ; Mishra, P. ; Abraham, G. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o211t-cd1a36cc68a55563edcd2689779449b0e91e9a9e4ef918b5764eb5a782a297583</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2015</creationdate><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CONCENTRATION RATIO</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL GROWTH</topic><topic>CRYSTAL STRUCTURE</topic><topic>CRYSTALS</topic><topic>Diamond films</topic><topic>DIAMONDS</topic><topic>METHANE</topic><topic>NANOSTRUCTURES</topic><topic>Organic chemistry</topic><topic>PRESSURE DEPENDENCE</topic><topic>Pressure effects</topic><topic>RAMAN SPECTROSCOPY</topic><topic>ROUGHNESS</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>Silicon substrates</topic><topic>SUBSTRATES</topic><topic>SURFACES</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mishra, S. C.</creatorcontrib><creatorcontrib>Choudhary, R. K.</creatorcontrib><creatorcontrib>Mishra, P.</creatorcontrib><creatorcontrib>Abraham, G. J.</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mishra, S. C.</au><au>Choudhary, R. K.</au><au>Mishra, P.</au><au>Abraham, G. J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Deposition and characterization of diamond thin films by HF-CVD method</atitle><btitle>AIP Conference Proceedings</btitle><date>2015-06-24</date><risdate>2015</risdate><volume>1665</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><abstract>Effect of reactor pressure and methane gas concentration on the growth of diamond films on Si (100) substrate by hot filament chemical vapor deposition (HFCVD) method has been studied in this work. Raman spectroscopy measurements of the obtained film confirmed the formation of a mixture of micro and nanocrystalline diamond by showing peaks at 1140 and 1334 cm−1 wave shifts. Scanning electron microscopy results showed formation of well defined faceted diamond grains of 100–500 nm size. Average roughness of the films measured by a surface profilometer was in the range of 40–60 nm.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4917964</doi></addata></record> |
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| identifier | ISSN: 0094-243X |
| ispartof | AIP Conference Proceedings, 2015, Vol.1665 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22490423 |
| source | AIP Journals Complete |
| subjects | CHEMICAL VAPOR DEPOSITION CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH CRYSTAL STRUCTURE CRYSTALS Diamond films DIAMONDS METHANE NANOSTRUCTURES Organic chemistry PRESSURE DEPENDENCE Pressure effects RAMAN SPECTROSCOPY ROUGHNESS SCANNING ELECTRON MICROSCOPY Silicon substrates SUBSTRATES SURFACES THIN FILMS |
| title | Deposition and characterization of diamond thin films by HF-CVD method |
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