Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current le...

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Veröffentlicht in:	Applied physics letters 2016-02, Vol.108 (5)
Hauptverfasser:	Dharmaraj, P., Justin Jesuraj, P., Jeganathan, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Current leakage Current voltage characteristics ELECTRIC POTENTIAL ELECTRON BEAMS Electron irradiation ELECTRON MOBILITY Electron transport Epitaxial growth EPITAXY FERMI LEVEL GRAPHENE HYDROGEN Hydrogen storage Intercalation INTERFACES LEAKAGE CURRENT SCATTERING SILICON CARBIDES TUNING
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