Investigation of defect-induced abnormal body current in fin field-effect-transistors

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing dra...

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Veröffentlicht in:Applied physics letters 2015-08, Vol.107 (8)
Hauptverfasser: Liu, Kuan-Ju, Chang, Ting-Chang, Chen, Ching-En, Yang, Ren-Ya, Tsai, Jyun-Yu, Lu, Ying-Hsin, Liu, Xi-Wen, Cheng, Osbert, Huang, Cheng-Tung
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Sprache:eng
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