Investigation of defect-induced abnormal body current in fin field-effect-transistors
This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing dra...
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| Veröffentlicht in: | Applied physics letters 2015-08, Vol.107 (8) |
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| container_issue | 8 |
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| container_title | Applied physics letters |
| container_volume | 107 |
| creator | Liu, Kuan-Ju Chang, Ting-Chang Chen, Ching-En Yang, Ren-Ya Tsai, Jyun-Yu Lu, Ying-Hsin Liu, Xi-Wen Cheng, Osbert Huang, Cheng-Tung |
| description | This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal. |
| doi_str_mv | 10.1063/1.4929429 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22489176</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124102701</sourcerecordid><originalsourceid>FETCH-LOGICAL-c285t-9281eff0b260ead5974517eadb65949f30732308e9913feb3ce44ad6e9f9c3a23</originalsourceid><addsrcrecordid>eNpFUE1LAzEUDKJgrR78BwuePGzNS7IfOUrRWih4seeQzb7oljapSVbovze2BQ-P9wZmHjNDyD3QGdCaP8FMSCYFkxdkArRpSg7QXpIJpZSXtazgmtzEuMmwYpxPyHrpfjCm4VOnwbvC26JHiyaVg-tHg32hO-fDTm-LzveHwowhoEvF4Ap7HNz2JdqjIgXt4hCTD_GWXFm9jXh33lOyfn35mL-Vq_fFcv68Kg1rq1RK1kIW047VFHVfyUZU0OSrqysppOW04YzTFqUEbrHjBoXQfY3SSsM141PycPrrcwQVzZDQfBnvXPajGBOthKb-Z-2D_x5zWrXxY3DZmGLABFDWUMisxxPLBB9jQKv2YdjpcFBA1V-3CtS5W_4Lh0tq6Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124102701</pqid></control><display><type>article</type><title>Investigation of defect-induced abnormal body current in fin field-effect-transistors</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Liu, Kuan-Ju ; Chang, Ting-Chang ; Chen, Ching-En ; Yang, Ren-Ya ; Tsai, Jyun-Yu ; Lu, Ying-Hsin ; Liu, Xi-Wen ; Cheng, Osbert ; Huang, Cheng-Tung</creator><creatorcontrib>Liu, Kuan-Ju ; Chang, Ting-Chang ; Chen, Ching-En ; Yang, Ren-Ya ; Tsai, Jyun-Yu ; Lu, Ying-Hsin ; Liu, Xi-Wen ; Cheng, Osbert ; Huang, Cheng-Tung</creatorcontrib><description>This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4929429</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; ELECTRIC POTENTIAL ; Electron tunneling ; FIELD EFFECT TRANSISTORS ; HOLES ; IONIZATION ; LEAKAGE CURRENT ; METALS ; OPERATION ; Semiconductor devices ; Surface defects ; SURFACES ; THREE-DIMENSIONAL LATTICES ; Transistors ; TUNNEL EFFECT</subject><ispartof>Applied physics letters, 2015-08, Vol.107 (8)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-9281eff0b260ead5974517eadb65949f30732308e9913feb3ce44ad6e9f9c3a23</citedby><cites>FETCH-LOGICAL-c285t-9281eff0b260ead5974517eadb65949f30732308e9913feb3ce44ad6e9f9c3a23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22489176$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Kuan-Ju</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Chen, Ching-En</creatorcontrib><creatorcontrib>Yang, Ren-Ya</creatorcontrib><creatorcontrib>Tsai, Jyun-Yu</creatorcontrib><creatorcontrib>Lu, Ying-Hsin</creatorcontrib><creatorcontrib>Liu, Xi-Wen</creatorcontrib><creatorcontrib>Cheng, Osbert</creatorcontrib><creatorcontrib>Huang, Cheng-Tung</creatorcontrib><title>Investigation of defect-induced abnormal body current in fin field-effect-transistors</title><title>Applied physics letters</title><description>This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.</description><subject>Applied physics</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>ELECTRIC POTENTIAL</subject><subject>Electron tunneling</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>HOLES</subject><subject>IONIZATION</subject><subject>LEAKAGE CURRENT</subject><subject>METALS</subject><subject>OPERATION</subject><subject>Semiconductor devices</subject><subject>Surface defects</subject><subject>SURFACES</subject><subject>THREE-DIMENSIONAL LATTICES</subject><subject>Transistors</subject><subject>TUNNEL EFFECT</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpFUE1LAzEUDKJgrR78BwuePGzNS7IfOUrRWih4seeQzb7oljapSVbovze2BQ-P9wZmHjNDyD3QGdCaP8FMSCYFkxdkArRpSg7QXpIJpZSXtazgmtzEuMmwYpxPyHrpfjCm4VOnwbvC26JHiyaVg-tHg32hO-fDTm-LzveHwowhoEvF4Ap7HNz2JdqjIgXt4hCTD_GWXFm9jXh33lOyfn35mL-Vq_fFcv68Kg1rq1RK1kIW047VFHVfyUZU0OSrqysppOW04YzTFqUEbrHjBoXQfY3SSsM141PycPrrcwQVzZDQfBnvXPajGBOthKb-Z-2D_x5zWrXxY3DZmGLABFDWUMisxxPLBB9jQKv2YdjpcFBA1V-3CtS5W_4Lh0tq6Q</recordid><startdate>20150824</startdate><enddate>20150824</enddate><creator>Liu, Kuan-Ju</creator><creator>Chang, Ting-Chang</creator><creator>Chen, Ching-En</creator><creator>Yang, Ren-Ya</creator><creator>Tsai, Jyun-Yu</creator><creator>Lu, Ying-Hsin</creator><creator>Liu, Xi-Wen</creator><creator>Cheng, Osbert</creator><creator>Huang, Cheng-Tung</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20150824</creationdate><title>Investigation of defect-induced abnormal body current in fin field-effect-transistors</title><author>Liu, Kuan-Ju ; Chang, Ting-Chang ; Chen, Ching-En ; Yang, Ren-Ya ; Tsai, Jyun-Yu ; Lu, Ying-Hsin ; Liu, Xi-Wen ; Cheng, Osbert ; Huang, Cheng-Tung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-9281eff0b260ead5974517eadb65949f30732308e9913feb3ce44ad6e9f9c3a23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>ELECTRIC POTENTIAL</topic><topic>Electron tunneling</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>HOLES</topic><topic>IONIZATION</topic><topic>LEAKAGE CURRENT</topic><topic>METALS</topic><topic>OPERATION</topic><topic>Semiconductor devices</topic><topic>Surface defects</topic><topic>SURFACES</topic><topic>THREE-DIMENSIONAL LATTICES</topic><topic>Transistors</topic><topic>TUNNEL EFFECT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Kuan-Ju</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Chen, Ching-En</creatorcontrib><creatorcontrib>Yang, Ren-Ya</creatorcontrib><creatorcontrib>Tsai, Jyun-Yu</creatorcontrib><creatorcontrib>Lu, Ying-Hsin</creatorcontrib><creatorcontrib>Liu, Xi-Wen</creatorcontrib><creatorcontrib>Cheng, Osbert</creatorcontrib><creatorcontrib>Huang, Cheng-Tung</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Kuan-Ju</au><au>Chang, Ting-Chang</au><au>Chen, Ching-En</au><au>Yang, Ren-Ya</au><au>Tsai, Jyun-Yu</au><au>Lu, Ying-Hsin</au><au>Liu, Xi-Wen</au><au>Cheng, Osbert</au><au>Huang, Cheng-Tung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of defect-induced abnormal body current in fin field-effect-transistors</atitle><jtitle>Applied physics letters</jtitle><date>2015-08-24</date><risdate>2015</risdate><volume>107</volume><issue>8</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4929429</doi></addata></record> |
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| ispartof | Applied physics letters, 2015-08, Vol.107 (8) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ELECTRIC POTENTIAL Electron tunneling FIELD EFFECT TRANSISTORS HOLES IONIZATION LEAKAGE CURRENT METALS OPERATION Semiconductor devices Surface defects SURFACES THREE-DIMENSIONAL LATTICES Transistors TUNNEL EFFECT |
| title | Investigation of defect-induced abnormal body current in fin field-effect-transistors |
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