A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous i...

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Veröffentlicht in:	Applied physics letters 2015-08, Vol.107 (5)
Hauptverfasser:	Choi, Myung-Jea, Kim, Myeong-Ho, Choi, Duck-Kyun
Format:	Artikel
Sprache:	eng
Schlagworte:	CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CURRENT DENSITY ELECTRONIC STRUCTURE GALLIUM INDIUM LEAKAGE CURRENT TIN OXIDES ZINC OXIDES
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